JPWO2022114026A1 - - Google Patents

Info

Publication number
JPWO2022114026A1
JPWO2022114026A1 JP2022530830A JP2022530830A JPWO2022114026A1 JP WO2022114026 A1 JPWO2022114026 A1 JP WO2022114026A1 JP 2022530830 A JP2022530830 A JP 2022530830A JP 2022530830 A JP2022530830 A JP 2022530830A JP WO2022114026 A1 JPWO2022114026 A1 JP WO2022114026A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022530830A
Other versions
JP7160232B1 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022114026A1 publication Critical patent/JPWO2022114026A1/ja
Priority to JP2022163946A priority Critical patent/JP2022191380A/ja
Application granted granted Critical
Publication of JP7160232B1 publication Critical patent/JP7160232B1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
JP2022530830A 2020-11-30 2021-11-24 透明電極基板及び太陽電池 Active JP7160232B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022163946A JP2022191380A (ja) 2020-11-30 2022-10-12 透明電極基板及び太陽電池

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020198862 2020-11-30
JP2020198862 2020-11-30
PCT/JP2021/043064 WO2022114026A1 (ja) 2020-11-30 2021-11-24 透明電極基板及び太陽電池

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022163946A Division JP2022191380A (ja) 2020-11-30 2022-10-12 透明電極基板及び太陽電池

Publications (2)

Publication Number Publication Date
JPWO2022114026A1 true JPWO2022114026A1 (ja) 2022-06-02
JP7160232B1 JP7160232B1 (ja) 2022-10-25

Family

ID=81755553

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022530830A Active JP7160232B1 (ja) 2020-11-30 2021-11-24 透明電極基板及び太陽電池
JP2022163946A Pending JP2022191380A (ja) 2020-11-30 2022-10-12 透明電極基板及び太陽電池

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022163946A Pending JP2022191380A (ja) 2020-11-30 2022-10-12 透明電極基板及び太陽電池

Country Status (3)

Country Link
JP (2) JP7160232B1 (ja)
CN (2) CN114846627A (ja)
WO (1) WO2022114026A1 (ja)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53148993A (en) * 1977-06-01 1978-12-26 Toshiba Corp Semiconductor photoelectric conversion element
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
JPH0620150B2 (ja) * 1988-04-11 1994-03-16 日本板硝子株式会社 非晶質太陽電池の製造方法
JPH06177407A (ja) * 1992-12-02 1994-06-24 Mitsubishi Materials Corp 透明導電膜
JP3869978B2 (ja) * 1998-06-30 2007-01-17 キヤノン株式会社 光起電力素子
JP2001036107A (ja) * 1999-05-18 2001-02-09 Nippon Sheet Glass Co Ltd 光電変換装置用基板およびこれを用いた光電変換装置
JP4467707B2 (ja) * 1999-05-18 2010-05-26 日本板硝子株式会社 導電膜付きガラス板とその製造方法、およびこれを用いた光電変換装置
JP3227449B2 (ja) * 1999-05-28 2001-11-12 日本板硝子株式会社 光電変換装置用基板とその製造方法、およびこれを用いた光電変換装置
EP1471541B1 (en) * 2002-01-28 2016-10-19 Nippon Sheet Glass Company, Limited Glass substrate coated with a transparent conductive film and photoelectric conversion device including said glass substrate
WO2007058118A1 (ja) * 2005-11-17 2007-05-24 Asahi Glass Company, Limited 太陽電池用透明導電性基板およびその製造方法
FR2932009B1 (fr) * 2008-06-02 2010-09-17 Saint Gobain Cellule photovoltaique et substrat de cellule photovoltaique
JP5538375B2 (ja) * 2009-05-18 2014-07-02 三菱電機株式会社 薄膜太陽電池およびその製造方法
JP2011117082A (ja) * 2010-12-20 2011-06-16 Mitsubishi Heavy Ind Ltd 透明電極膜の製膜方法及び太陽電池の製造方法
KR101506303B1 (ko) * 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
WO2013119550A1 (en) * 2012-02-10 2013-08-15 Alliance For Sustainable Energy, Llc Thin film photovoltaic devices with a minimally conductive buffer layer
JP2015005621A (ja) * 2013-06-20 2015-01-08 株式会社ノリタケカンパニーリミテド 太陽電池用基板およびその製造方法

Also Published As

Publication number Publication date
CN114846627A (zh) 2022-08-02
JP7160232B1 (ja) 2022-10-25
WO2022114026A1 (ja) 2022-06-02
CN115579406A (zh) 2023-01-06
JP2022191380A (ja) 2022-12-27
CN115579406B (zh) 2024-05-07

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