JPWO2022097262A1 - - Google Patents
Info
- Publication number
- JPWO2022097262A1 JPWO2022097262A1 JP2022560592A JP2022560592A JPWO2022097262A1 JP WO2022097262 A1 JPWO2022097262 A1 JP WO2022097262A1 JP 2022560592 A JP2022560592 A JP 2022560592A JP 2022560592 A JP2022560592 A JP 2022560592A JP WO2022097262 A1 JPWO2022097262 A1 JP WO2022097262A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/112—Field plates comprising multiple field plate segments
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/041487 WO2022097262A1 (ja) | 2020-11-06 | 2020-11-06 | 半導体装置および電力変換装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022097262A1 true JPWO2022097262A1 (https=) | 2022-05-12 |
| JPWO2022097262A5 JPWO2022097262A5 (https=) | 2023-01-10 |
| JP7459292B2 JP7459292B2 (ja) | 2024-04-01 |
Family
ID=81457053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022560592A Active JP7459292B2 (ja) | 2020-11-06 | 2020-11-06 | 半導体装置および電力変換装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12464767B2 (https=) |
| JP (1) | JP7459292B2 (https=) |
| CN (1) | CN116368623B (https=) |
| DE (1) | DE112020007758T5 (https=) |
| WO (1) | WO2022097262A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025074874A1 (ja) * | 2023-10-05 | 2025-04-10 | ローム株式会社 | 半導体装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008235331A (ja) * | 2007-03-16 | 2008-10-02 | Nissan Motor Co Ltd | 炭化珪素半導体装置及びその製造方法 |
| WO2010125661A1 (ja) * | 2009-04-30 | 2010-11-04 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP2013026563A (ja) * | 2011-07-25 | 2013-02-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| WO2020208761A1 (ja) * | 2019-04-11 | 2020-10-15 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5026019B2 (ja) * | 2006-08-08 | 2012-09-12 | 三菱電機株式会社 | 薄膜トランジスタ基板、薄膜トランジスタの製造方法、及び表示装置 |
| JP5751763B2 (ja) * | 2010-06-07 | 2015-07-22 | 三菱電機株式会社 | 半導体装置 |
| JP5687128B2 (ja) * | 2011-05-06 | 2015-03-18 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP5640969B2 (ja) | 2011-12-26 | 2014-12-17 | 三菱電機株式会社 | 半導体素子 |
| WO2014087600A1 (ja) | 2012-12-04 | 2014-06-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP6617292B2 (ja) * | 2014-05-23 | 2019-12-11 | パナソニックＩｐマネジメント株式会社 | 炭化珪素半導体装置 |
| WO2018038133A1 (ja) | 2016-08-25 | 2018-03-01 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| US11094790B2 (en) * | 2016-09-23 | 2021-08-17 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device |
| US9985125B1 (en) | 2016-11-25 | 2018-05-29 | Panasonic Intellectual Property Management Co., Ltd. | Silicon carbide semiconductor device |
| CN110337725B (zh) | 2017-02-24 | 2022-08-05 | 三菱电机株式会社 | 碳化硅半导体装置以及电力变换装置 |
| US11355629B2 (en) | 2017-03-07 | 2022-06-07 | Mitsubishi Electric Corporation | Semiconductor device and power converter |
| JP7013735B2 (ja) * | 2017-09-05 | 2022-02-01 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| JP7000240B2 (ja) * | 2018-04-18 | 2022-01-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP7085959B2 (ja) * | 2018-10-22 | 2022-06-17 | 三菱電機株式会社 | 半導体装置 |
-
2020
- 2020-11-06 CN CN202080106392.3A patent/CN116368623B/zh active Active
- 2020-11-06 US US18/031,365 patent/US12464767B2/en active Active
- 2020-11-06 DE DE112020007758.6T patent/DE112020007758T5/de active Pending
- 2020-11-06 JP JP2022560592A patent/JP7459292B2/ja active Active
- 2020-11-06 WO PCT/JP2020/041487 patent/WO2022097262A1/ja not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008235331A (ja) * | 2007-03-16 | 2008-10-02 | Nissan Motor Co Ltd | 炭化珪素半導体装置及びその製造方法 |
| WO2010125661A1 (ja) * | 2009-04-30 | 2010-11-04 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP2013026563A (ja) * | 2011-07-25 | 2013-02-04 | Mitsubishi Electric Corp | 炭化珪素半導体装置 |
| WO2020208761A1 (ja) * | 2019-04-11 | 2020-10-15 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112020007758T5 (de) | 2023-08-17 |
| US12464767B2 (en) | 2025-11-04 |
| WO2022097262A1 (ja) | 2022-05-12 |
| US20230378342A1 (en) | 2023-11-23 |
| JP7459292B2 (ja) | 2024-04-01 |
| CN116368623A (zh) | 2023-06-30 |
| CN116368623B (zh) | 2025-07-29 |
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