CN116368623B - 半导体装置以及电力变换装置 - Google Patents

半导体装置以及电力变换装置

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Publication number
CN116368623B
CN116368623B CN202080106392.3A CN202080106392A CN116368623B CN 116368623 B CN116368623 B CN 116368623B CN 202080106392 A CN202080106392 A CN 202080106392A CN 116368623 B CN116368623 B CN 116368623B
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CN
China
Prior art keywords
region
outer peripheral
insulating film
semiconductor device
end portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080106392.3A
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English (en)
Chinese (zh)
Other versions
CN116368623A (zh
Inventor
海老原洪平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN116368623A publication Critical patent/CN116368623A/zh
Application granted granted Critical
Publication of CN116368623B publication Critical patent/CN116368623B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202080106392.3A 2020-11-06 2020-11-06 半导体装置以及电力变换装置 Active CN116368623B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/041487 WO2022097262A1 (ja) 2020-11-06 2020-11-06 半導体装置および電力変換装置

Publications (2)

Publication Number Publication Date
CN116368623A CN116368623A (zh) 2023-06-30
CN116368623B true CN116368623B (zh) 2025-07-29

Family

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Family Applications (1)

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CN202080106392.3A Active CN116368623B (zh) 2020-11-06 2020-11-06 半导体装置以及电力变换装置

Country Status (5)

Country Link
US (1) US12464767B2 (https=)
JP (1) JP7459292B2 (https=)
CN (1) CN116368623B (https=)
DE (1) DE112020007758T5 (https=)
WO (1) WO2022097262A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025074874A1 (ja) * 2023-10-05 2025-04-10 ローム株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102334190A (zh) * 2009-04-30 2012-01-25 三菱电机株式会社 半导体装置及其制造方法
CN102903702A (zh) * 2011-07-25 2013-01-30 三菱电机株式会社 碳化硅半导体装置
CN110431669A (zh) * 2017-03-07 2019-11-08 三菱电机株式会社 半导体装置以及电力变换装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5026019B2 (ja) * 2006-08-08 2012-09-12 三菱電機株式会社 薄膜トランジスタ基板、薄膜トランジスタの製造方法、及び表示装置
JP4793293B2 (ja) 2007-03-16 2011-10-12 日産自動車株式会社 炭化珪素半導体装置及びその製造方法
JP5751763B2 (ja) * 2010-06-07 2015-07-22 三菱電機株式会社 半導体装置
JP5687128B2 (ja) * 2011-05-06 2015-03-18 三菱電機株式会社 半導体装置およびその製造方法
JP5640969B2 (ja) 2011-12-26 2014-12-17 三菱電機株式会社 半導体素子
WO2014087600A1 (ja) 2012-12-04 2014-06-12 株式会社デンソー 半導体装置およびその製造方法
JP6617292B2 (ja) * 2014-05-23 2019-12-11 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
WO2018038133A1 (ja) 2016-08-25 2018-03-01 三菱電機株式会社 炭化珪素半導体装置
US11094790B2 (en) * 2016-09-23 2021-08-17 Mitsubishi Electric Corporation Silicon carbide semiconductor device
US9985125B1 (en) 2016-11-25 2018-05-29 Panasonic Intellectual Property Management Co., Ltd. Silicon carbide semiconductor device
CN110337725B (zh) 2017-02-24 2022-08-05 三菱电机株式会社 碳化硅半导体装置以及电力变换装置
JP7013735B2 (ja) * 2017-09-05 2022-02-01 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7000240B2 (ja) * 2018-04-18 2022-01-19 ルネサスエレクトロニクス株式会社 半導体装置
JP7085959B2 (ja) * 2018-10-22 2022-06-17 三菱電機株式会社 半導体装置
JP6870119B2 (ja) * 2019-04-11 2021-05-12 三菱電機株式会社 半導体装置および電力変換装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102334190A (zh) * 2009-04-30 2012-01-25 三菱电机株式会社 半导体装置及其制造方法
CN102903702A (zh) * 2011-07-25 2013-01-30 三菱电机株式会社 碳化硅半导体装置
CN110431669A (zh) * 2017-03-07 2019-11-08 三菱电机株式会社 半导体装置以及电力变换装置

Also Published As

Publication number Publication date
DE112020007758T5 (de) 2023-08-17
JPWO2022097262A1 (https=) 2022-05-12
US12464767B2 (en) 2025-11-04
WO2022097262A1 (ja) 2022-05-12
US20230378342A1 (en) 2023-11-23
JP7459292B2 (ja) 2024-04-01
CN116368623A (zh) 2023-06-30

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