JPWO2022079995A1 - - Google Patents

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Publication number
JPWO2022079995A1
JPWO2022079995A1 JP2022556427A JP2022556427A JPWO2022079995A1 JP WO2022079995 A1 JPWO2022079995 A1 JP WO2022079995A1 JP 2022556427 A JP2022556427 A JP 2022556427A JP 2022556427 A JP2022556427 A JP 2022556427A JP WO2022079995 A1 JPWO2022079995 A1 JP WO2022079995A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2022556427A
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Japanese (ja)
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JP7689297B2 (ja
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Publication of JPWO2022079995A1 publication Critical patent/JPWO2022079995A1/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
JP2022556427A 2020-10-16 2021-08-16 窒化物半導体装置 Active JP7689297B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020174945 2020-10-16
JP2020174945 2020-10-16
PCT/JP2021/029951 WO2022079995A1 (ja) 2020-10-16 2021-08-16 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2022079995A1 true JPWO2022079995A1 (https=) 2022-04-21
JP7689297B2 JP7689297B2 (ja) 2025-06-06

Family

ID=81207917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022556427A Active JP7689297B2 (ja) 2020-10-16 2021-08-16 窒化物半導体装置

Country Status (3)

Country Link
US (1) US20230361179A1 (https=)
JP (1) JP7689297B2 (https=)
WO (1) WO2022079995A1 (https=)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04171734A (ja) * 1990-11-02 1992-06-18 Mitsubishi Electric Corp 半導体装置
JP2002299351A (ja) * 2001-03-30 2002-10-11 Fujitsu Quantum Devices Ltd 電力増幅用半導体装置
JP2003168736A (ja) * 2001-11-30 2003-06-13 Hitachi Ltd 半導体素子及び高周波電力増幅装置並びに無線通信機
JP2009123932A (ja) * 2007-11-15 2009-06-04 Nec Corp 半導体装置およびその製造方法
JP2012089793A (ja) * 2010-10-22 2012-05-10 Fujitsu Semiconductor Ltd 半導体装置
JP2013058640A (ja) * 2011-09-08 2013-03-28 Toshiba Corp 半導体装置
US20130313653A1 (en) * 2012-05-25 2013-11-28 Infineon Technologies Austria Ag MOS Transistor with Multi-finger Gate Electrode
JP2016139718A (ja) * 2015-01-28 2016-08-04 株式会社東芝 半導体装置
JP2018088473A (ja) * 2016-11-29 2018-06-07 日亜化学工業株式会社 電界効果トランジスタ
JP2019512886A (ja) * 2016-03-17 2019-05-16 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． バイパスされたゲート構造を有するトランジスタ
JP2020068343A (ja) * 2018-10-26 2020-04-30 株式会社東芝 半導体装置
JP2020524911A (ja) * 2017-06-21 2020-08-20 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 平滑化された立ち上がり動作及び改善された線形性を有する複数のユニット・セル・トランジスタを有する半導体デバイス

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04171734A (ja) * 1990-11-02 1992-06-18 Mitsubishi Electric Corp 半導体装置
JP2002299351A (ja) * 2001-03-30 2002-10-11 Fujitsu Quantum Devices Ltd 電力増幅用半導体装置
JP2003168736A (ja) * 2001-11-30 2003-06-13 Hitachi Ltd 半導体素子及び高周波電力増幅装置並びに無線通信機
JP2009123932A (ja) * 2007-11-15 2009-06-04 Nec Corp 半導体装置およびその製造方法
JP2012089793A (ja) * 2010-10-22 2012-05-10 Fujitsu Semiconductor Ltd 半導体装置
JP2013058640A (ja) * 2011-09-08 2013-03-28 Toshiba Corp 半導体装置
US20130313653A1 (en) * 2012-05-25 2013-11-28 Infineon Technologies Austria Ag MOS Transistor with Multi-finger Gate Electrode
JP2016139718A (ja) * 2015-01-28 2016-08-04 株式会社東芝 半導体装置
JP2019512886A (ja) * 2016-03-17 2019-05-16 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． バイパスされたゲート構造を有するトランジスタ
JP2018088473A (ja) * 2016-11-29 2018-06-07 日亜化学工業株式会社 電界効果トランジスタ
JP2020524911A (ja) * 2017-06-21 2020-08-20 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 平滑化された立ち上がり動作及び改善された線形性を有する複数のユニット・セル・トランジスタを有する半導体デバイス
JP2020068343A (ja) * 2018-10-26 2020-04-30 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US20230361179A1 (en) 2023-11-09
WO2022079995A1 (ja) 2022-04-21
JP7689297B2 (ja) 2025-06-06

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