JPWO2022075061A1 - - Google Patents

Info

Publication number
JPWO2022075061A1
JPWO2022075061A1 JP2022555348A JP2022555348A JPWO2022075061A1 JP WO2022075061 A1 JPWO2022075061 A1 JP WO2022075061A1 JP 2022555348 A JP2022555348 A JP 2022555348A JP 2022555348 A JP2022555348 A JP 2022555348A JP WO2022075061 A1 JPWO2022075061 A1 JP WO2022075061A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022555348A
Other versions
JPWO2022075061A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022075061A1 publication Critical patent/JPWO2022075061A1/ja
Publication of JPWO2022075061A5 publication Critical patent/JPWO2022075061A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022555348A 2020-10-07 2021-09-22 Pending JPWO2022075061A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020169974 2020-10-07
PCT/JP2021/034734 WO2022075061A1 (ja) 2020-10-07 2021-09-22 単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022075061A1 true JPWO2022075061A1 (ja) 2022-04-14
JPWO2022075061A5 JPWO2022075061A5 (ja) 2023-05-31

Family

ID=81126811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022555348A Pending JPWO2022075061A1 (ja) 2020-10-07 2021-09-22

Country Status (7)

Country Link
US (1) US20230357950A1 (ja)
JP (1) JPWO2022075061A1 (ja)
KR (1) KR20230051263A (ja)
CN (1) CN116324049A (ja)
DE (1) DE112021005298T5 (ja)
TW (1) TWI782726B (ja)
WO (1) WO2022075061A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116732604A (zh) 2022-06-01 2023-09-12 四川晶科能源有限公司 一种单晶拉晶方法以及单晶拉晶设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000128691A (ja) 1998-10-16 2000-05-09 Shin Etsu Handotai Co Ltd シリコン種結晶およびシリコン単結晶の製造方法
JP4325389B2 (ja) 2003-12-15 2009-09-02 信越半導体株式会社 融液面初期位置調整装置及び融液面初期位置調整方法並びに単結晶の製造方法
JP4929817B2 (ja) * 2006-04-25 2012-05-09 信越半導体株式会社 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置
JP5194295B2 (ja) * 2007-08-24 2013-05-08 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｃｚ法による単結晶引き上げ装置内の液面レベル測定方法
JP2009234889A (ja) 2008-03-28 2009-10-15 Shin Etsu Handotai Co Ltd 種結晶の製造方法および種結晶
CN201823527U (zh) * 2010-10-14 2011-05-11 南通市华峰化工有限责任公司 单人操作机械维修防脱落装置
JP6428372B2 (ja) 2015-02-26 2018-11-28 株式会社Sumco 原料融液液面と種結晶下端との間隔測定方法、種結晶の予熱方法、および単結晶の製造方法
JP6645406B2 (ja) * 2016-12-02 2020-02-14 株式会社Sumco 単結晶の製造方法
JP6627739B2 (ja) * 2016-12-20 2020-01-08 株式会社Sumco 単結晶の製造方法
JP6939714B2 (ja) 2018-06-11 2021-09-22 株式会社Sumco 融液面と種結晶の間隔測定方法、種結晶の予熱方法、及び単結晶の製造方法
DE102018217509A1 (de) * 2018-10-12 2020-04-16 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial nach der CZ-Methode aus einer Schmelze und Verfahren unter Verwendung der Vorrichtung

Also Published As

Publication number Publication date
CN116324049A (zh) 2023-06-23
DE112021005298T5 (de) 2023-08-31
WO2022075061A1 (ja) 2022-04-14
TWI782726B (zh) 2022-11-01
TW202219337A (zh) 2022-05-16
US20230357950A1 (en) 2023-11-09
KR20230051263A (ko) 2023-04-17

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