JPWO2022030651A5 - - Google Patents
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- JPWO2022030651A5 JPWO2022030651A5 JP2022541771A JP2022541771A JPWO2022030651A5 JP WO2022030651 A5 JPWO2022030651 A5 JP WO2022030651A5 JP 2022541771 A JP2022541771 A JP 2022541771A JP 2022541771 A JP2022541771 A JP 2022541771A JP WO2022030651 A5 JPWO2022030651 A5 JP WO2022030651A5
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- JP
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020134996 | 2020-08-07 | ||
| JP2020134996 | 2020-08-07 | ||
| PCT/JP2021/029578 WO2022030651A1 (ja) | 2020-08-07 | 2021-08-10 | 半導体素子および半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022030651A1 JPWO2022030651A1 (https=) | 2022-02-10 |
| JPWO2022030651A5 true JPWO2022030651A5 (https=) | 2023-04-25 |
| JP7823290B2 JP7823290B2 (ja) | 2026-03-04 |
Family
ID=80117487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022541771A Active JP7823290B2 (ja) | 2020-08-07 | 2021-08-10 | 半導体素子および半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230290888A1 (https=) |
| JP (1) | JP7823290B2 (https=) |
| CN (1) | CN116114061A (https=) |
| TW (1) | TWI907475B (https=) |
| WO (1) | WO2022030651A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023144454A (ja) * | 2022-03-28 | 2023-10-11 | 株式会社 日立パワーデバイス | 半導体装置、半導体装置および電力変換装置 |
| TWI878836B (zh) * | 2022-04-27 | 2025-04-01 | 日商村田製作所股份有限公司 | 半導體裝置 |
| US20250098199A1 (en) * | 2023-09-20 | 2025-03-20 | Wolfspeed, Inc. | Corrosion Resistant Metal Structures for Wide Bandgap Semiconductor Devices |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6259138B1 (en) * | 1998-12-18 | 2001-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith |
| JP4645406B2 (ja) * | 2005-10-13 | 2011-03-09 | 富士電機システムズ株式会社 | 半導体装置 |
| JP3862737B1 (ja) * | 2005-10-18 | 2006-12-27 | 栄樹 津島 | クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板 |
| JP4976688B2 (ja) * | 2005-12-15 | 2012-07-18 | 富士電機株式会社 | ヒートスプレッダと金属板との接合方法 |
| KR20120032258A (ko) * | 2010-09-28 | 2012-04-05 | 삼성엘이디 주식회사 | 질화갈륨계 반도체소자 및 그 제조방법 |
| CN103078040B (zh) * | 2011-08-22 | 2016-12-21 | Lg伊诺特有限公司 | 发光器件封装件和光装置 |
| KR102290801B1 (ko) * | 2013-06-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP6330220B2 (ja) * | 2014-03-27 | 2018-05-30 | 株式会社Ｊｏｌｅｄ | 表示装置、電子機器および基板 |
| EP2942804B1 (en) * | 2014-05-08 | 2017-07-12 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
| JP6652342B2 (ja) * | 2014-08-08 | 2020-02-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2017157661A (ja) * | 2016-03-01 | 2017-09-07 | 出光興産株式会社 | 半導体装置 |
| TWI831755B (zh) * | 2017-11-15 | 2024-02-11 | 日商Ｆｌｏｓｆｉａ股份有限公司 | ｐ型氧化物半導體膜及其形成方法 |
| US10573585B2 (en) * | 2018-03-19 | 2020-02-25 | Texas Instruments Incorporated | Power converter having a conductive clip |
| JP2020004861A (ja) * | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| JP7139862B2 (ja) * | 2018-10-15 | 2022-09-21 | 株式会社デンソー | 半導体装置 |
| JP7315137B2 (ja) * | 2018-12-26 | 2023-07-26 | 株式会社Flosfia | 結晶性酸化物膜 |
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2021
- 2021-08-06 TW TW110129032A patent/TWI907475B/zh active
- 2021-08-10 WO PCT/JP2021/029578 patent/WO2022030651A1/ja not_active Ceased
- 2021-08-10 JP JP2022541771A patent/JP7823290B2/ja active Active
- 2021-08-10 CN CN202180057395.7A patent/CN116114061A/zh active Pending
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2023
- 2023-02-06 US US18/106,095 patent/US20230290888A1/en active Pending