JPWO2022018823A1 - - Google Patents

Info

Publication number
JPWO2022018823A1
JPWO2022018823A1 JP2022538526A JP2022538526A JPWO2022018823A1 JP WO2022018823 A1 JPWO2022018823 A1 JP WO2022018823A1 JP 2022538526 A JP2022538526 A JP 2022538526A JP 2022538526 A JP2022538526 A JP 2022538526A JP WO2022018823 A1 JPWO2022018823 A1 JP WO2022018823A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022538526A
Other versions
JP7420258B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022018823A1 publication Critical patent/JPWO2022018823A1/ja
Application granted granted Critical
Publication of JP7420258B2 publication Critical patent/JP7420258B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085Long tailed pairs
    • H03F3/45089Non-folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/405Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/444Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45604Indexing scheme relating to differential amplifiers the IC comprising a input shunting resistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45636Indexing scheme relating to differential amplifiers the LC comprising clamping means, e.g. diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45652Indexing scheme relating to differential amplifiers the LC comprising one or more further dif amp stages, either identical to the dif amp or not, in cascade

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
JP2022538526A 2020-07-21 2020-07-21 ドライバ回路 Active JP7420258B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/028253 WO2022018823A1 (ja) 2020-07-21 2020-07-21 ドライバ回路

Publications (2)

Publication Number Publication Date
JPWO2022018823A1 true JPWO2022018823A1 (ja) 2022-01-27
JP7420258B2 JP7420258B2 (ja) 2024-01-23

Family

ID=79729346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022538526A Active JP7420258B2 (ja) 2020-07-21 2020-07-21 ドライバ回路

Country Status (3)

Country Link
US (1) US20230275581A1 (ja)
JP (1) JP7420258B2 (ja)
WO (1) WO2022018823A1 (ja)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631211A (ja) * 1986-06-20 1988-01-06 Fujitsu Ltd インタフエイス回路
JPH02170458A (ja) * 1988-12-22 1990-07-02 Sony Corp 保護回路
JPH07226557A (ja) * 1994-02-15 1995-08-22 Hitachi Ltd 電子回路およびこれを用いた半導体装置
JP2000510653A (ja) * 1997-04-16 2000-08-15 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ 高速集積回路のための分散型esd保護デバイス
JP2003023101A (ja) * 2001-07-05 2003-01-24 Mitsubishi Electric Corp 半導体装置
US20060256489A1 (en) * 2005-05-10 2006-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuits with impedance matching for radio-frequency applications
JP2010233140A (ja) * 2009-03-30 2010-10-14 Hitachi Ltd 半導体集積回路装置
JP2011228372A (ja) * 2010-04-16 2011-11-10 Toshiba Corp 半導体集積回路装置
US20130308232A1 (en) * 2012-05-16 2013-11-21 Nxp B.V. Protection circuit
JP2017175008A (ja) * 2016-03-24 2017-09-28 アンリツ株式会社 Esd保護回路およびesd保護方法
CN108322195A (zh) * 2017-01-16 2018-07-24 天津大学(青岛)海洋工程研究院有限公司 一种具有静电放电保护电路的功率放大器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2838836B2 (ja) * 1990-04-26 1998-12-16 富士通株式会社 半導体集積回路及び半導体集積回路装置
TW431042B (en) * 1999-05-18 2001-04-21 Sunplus Technology Co Ltd Electrostatic discharge protection apparatus of polydiode
US7009827B1 (en) * 2002-10-15 2006-03-07 Silicon Image, Inc. Voltage swing detection circuit for hot plug event or device detection via a differential link
US6738248B1 (en) * 2002-10-28 2004-05-18 Lsi Logic Corporation ESD protection circuit for low amplitude signals
US7218491B2 (en) * 2002-12-23 2007-05-15 Intel Corporation Electrostatic discharge protection unit including equalization
US8346198B2 (en) * 2005-06-30 2013-01-01 Silicon Laboratories Inc. Low noise amplifier for a radio receiver
US9019669B1 (en) * 2012-12-19 2015-04-28 Pmc-Sierra Us, Inc. Distributed electrostatic discharge protection circuit
US9438188B2 (en) * 2014-09-15 2016-09-06 Qualcomm Incorporated Common-gate amplifier for high-speed DC-coupling communications
US9432230B1 (en) * 2015-10-21 2016-08-30 Freescale Semiconductor, Inc. Passive equalizer capable of use in a receiver
US20190089150A1 (en) * 2017-09-19 2019-03-21 Kandou Labs, S.A. Distributed electrostatic discharge protection for chip-to-chip communications interface
JP2022081070A (ja) * 2020-11-19 2022-05-31 住友電気工業株式会社 静電気保護回路および半導体集積回路

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631211A (ja) * 1986-06-20 1988-01-06 Fujitsu Ltd インタフエイス回路
JPH02170458A (ja) * 1988-12-22 1990-07-02 Sony Corp 保護回路
JPH07226557A (ja) * 1994-02-15 1995-08-22 Hitachi Ltd 電子回路およびこれを用いた半導体装置
JP2000510653A (ja) * 1997-04-16 2000-08-15 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ 高速集積回路のための分散型esd保護デバイス
JP2003023101A (ja) * 2001-07-05 2003-01-24 Mitsubishi Electric Corp 半導体装置
US20060256489A1 (en) * 2005-05-10 2006-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuits with impedance matching for radio-frequency applications
JP2010233140A (ja) * 2009-03-30 2010-10-14 Hitachi Ltd 半導体集積回路装置
JP2011228372A (ja) * 2010-04-16 2011-11-10 Toshiba Corp 半導体集積回路装置
US20130308232A1 (en) * 2012-05-16 2013-11-21 Nxp B.V. Protection circuit
JP2017175008A (ja) * 2016-03-24 2017-09-28 アンリツ株式会社 Esd保護回路およびesd保護方法
CN108322195A (zh) * 2017-01-16 2018-07-24 天津大学(青岛)海洋工程研究院有限公司 一种具有静电放电保护电路的功率放大器

Also Published As

Publication number Publication date
WO2022018823A1 (ja) 2022-01-27
US20230275581A1 (en) 2023-08-31
JP7420258B2 (ja) 2024-01-23

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