JPWO2022018823A1 - - Google Patents

Info

Publication number
JPWO2022018823A1
JPWO2022018823A1 JP2022538526A JP2022538526A JPWO2022018823A1 JP WO2022018823 A1 JPWO2022018823 A1 JP WO2022018823A1 JP 2022538526 A JP2022538526 A JP 2022538526A JP 2022538526 A JP2022538526 A JP 2022538526A JP WO2022018823 A1 JPWO2022018823 A1 JP WO2022018823A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022538526A
Other versions
JP7420258B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022018823A1 publication Critical patent/JPWO2022018823A1/ja
Application granted granted Critical
Publication of JP7420258B2 publication Critical patent/JP7420258B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H03F3/45089—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45604—Indexing scheme relating to differential amplifiers the IC comprising a input shunting resistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45636—Indexing scheme relating to differential amplifiers the LC comprising clamping means, e.g. diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45652—Indexing scheme relating to differential amplifiers the LC comprising one or more further dif amp stages, either identical to the dif amp or not, in cascade

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
JP2022538526A 2020-07-21 2020-07-21 ドライバ回路 Active JP7420258B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/028253 WO2022018823A1 (ja) 2020-07-21 2020-07-21 ドライバ回路

Publications (2)

Publication Number Publication Date
JPWO2022018823A1 true JPWO2022018823A1 (ja) 2022-01-27
JP7420258B2 JP7420258B2 (ja) 2024-01-23

Family

ID=79729346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022538526A Active JP7420258B2 (ja) 2020-07-21 2020-07-21 ドライバ回路

Country Status (3)

Country Link
US (1) US20230275581A1 (ja)
JP (1) JP7420258B2 (ja)
WO (1) WO2022018823A1 (ja)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631211A (ja) * 1986-06-20 1988-01-06 Fujitsu Ltd インタフエイス回路
JPH02170458A (ja) * 1988-12-22 1990-07-02 Sony Corp 保護回路
JPH07226557A (ja) * 1994-02-15 1995-08-22 Hitachi Ltd 電子回路およびこれを用いた半導体装置
JP2000510653A (ja) * 1997-04-16 2000-08-15 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ 高速集積回路のための分散型ｅｓｄ保護デバイス
JP2003023101A (ja) * 2001-07-05 2003-01-24 Mitsubishi Electric Corp 半導体装置
US20060256489A1 (en) * 2005-05-10 2006-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuits with impedance matching for radio-frequency applications
JP2010233140A (ja) * 2009-03-30 2010-10-14 Hitachi Ltd 半導体集積回路装置
JP2011228372A (ja) * 2010-04-16 2011-11-10 Toshiba Corp 半導体集積回路装置
US20130308232A1 (en) * 2012-05-16 2013-11-21 Nxp B.V. Protection circuit
JP2017175008A (ja) * 2016-03-24 2017-09-28 アンリツ株式会社 Ｅｓｄ保護回路およびｅｓｄ保護方法
CN108322195A (zh) * 2017-01-16 2018-07-24 天津大学（青岛）海洋工程研究院有限公司 一种具有静电放电保护电路的功率放大器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2838836B2 (ja) * 1990-04-26 1998-12-16 富士通株式会社 半導体集積回路及び半導体集積回路装置
TW431042B (en) * 1999-05-18 2001-04-21 Sunplus Technology Co Ltd Electrostatic discharge protection apparatus of polydiode
US7009827B1 (en) * 2002-10-15 2006-03-07 Silicon Image, Inc. Voltage swing detection circuit for hot plug event or device detection via a differential link
US6738248B1 (en) * 2002-10-28 2004-05-18 Lsi Logic Corporation ESD protection circuit for low amplitude signals
US7218491B2 (en) * 2002-12-23 2007-05-15 Intel Corporation Electrostatic discharge protection unit including equalization
US8346198B2 (en) * 2005-06-30 2013-01-01 Silicon Laboratories Inc. Low noise amplifier for a radio receiver
US9019669B1 (en) * 2012-12-19 2015-04-28 Pmc-Sierra Us, Inc. Distributed electrostatic discharge protection circuit
US9438188B2 (en) * 2014-09-15 2016-09-06 Qualcomm Incorporated Common-gate amplifier for high-speed DC-coupling communications
US9432230B1 (en) * 2015-10-21 2016-08-30 Freescale Semiconductor, Inc. Passive equalizer capable of use in a receiver
US20190089150A1 (en) * 2017-09-19 2019-03-21 Kandou Labs, S.A. Distributed electrostatic discharge protection for chip-to-chip communications interface
JP2022081070A (ja) * 2020-11-19 2022-05-31 住友電気工業株式会社 静電気保護回路および半導体集積回路

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631211A (ja) * 1986-06-20 1988-01-06 Fujitsu Ltd インタフエイス回路
JPH02170458A (ja) * 1988-12-22 1990-07-02 Sony Corp 保護回路
JPH07226557A (ja) * 1994-02-15 1995-08-22 Hitachi Ltd 電子回路およびこれを用いた半導体装置
JP2000510653A (ja) * 1997-04-16 2000-08-15 ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ 高速集積回路のための分散型ｅｓｄ保護デバイス
JP2003023101A (ja) * 2001-07-05 2003-01-24 Mitsubishi Electric Corp 半導体装置
US20060256489A1 (en) * 2005-05-10 2006-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuits with impedance matching for radio-frequency applications
JP2010233140A (ja) * 2009-03-30 2010-10-14 Hitachi Ltd 半導体集積回路装置
JP2011228372A (ja) * 2010-04-16 2011-11-10 Toshiba Corp 半導体集積回路装置
US20130308232A1 (en) * 2012-05-16 2013-11-21 Nxp B.V. Protection circuit
JP2017175008A (ja) * 2016-03-24 2017-09-28 アンリツ株式会社 Ｅｓｄ保護回路およびｅｓｄ保護方法
CN108322195A (zh) * 2017-01-16 2018-07-24 天津大学（青岛）海洋工程研究院有限公司 一种具有静电放电保护电路的功率放大器

Also Published As

Publication number Publication date
US20230275581A1 (en) 2023-08-31
JP7420258B2 (ja) 2024-01-23
WO2022018823A1 (ja) 2022-01-27

Similar Documents

Publication Publication Date Title
BR112023005462A2 (ja)
BR112023012656A2 (ja)
BR112023009656A2 (ja)
BR102021015500A2 (ja)
BR102021007058A2 (ja)
BR102020022030A2 (ja)
BR112023011738A2 (ja)
BR112023016292A2 (ja)
BR112023011610A2 (ja)
BR112023011539A2 (ja)
BR112023006729A2 (ja)
BR102021018167A2 (ja)
BR102021017576A2 (ja)
BR102021016837A2 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016200A2 (ja)
BR102021016176A2 (ja)
BR102021015566A2 (ja)
BR102021015450A8 (ja)
BR102021015247A2 (ja)
BR102021014056A2 (ja)
BR102021014044A2 (ja)
BR102021013929A2 (ja)
BR102021012571A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221102

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230711

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230906

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20231212

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231225

R150 Certificate of patent or registration of utility model

Ref document number: 7420258

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150