JPWO2022018823A1 - - Google Patents
Info
- Publication number
- JPWO2022018823A1 JPWO2022018823A1 JP2022538526A JP2022538526A JPWO2022018823A1 JP WO2022018823 A1 JPWO2022018823 A1 JP WO2022018823A1 JP 2022538526 A JP2022538526 A JP 2022538526A JP 2022538526 A JP2022538526 A JP 2022538526A JP WO2022018823 A1 JPWO2022018823 A1 JP WO2022018823A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
- H03F3/45089—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/405—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising more than three power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45604—Indexing scheme relating to differential amplifiers the IC comprising a input shunting resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45636—Indexing scheme relating to differential amplifiers the LC comprising clamping means, e.g. diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45652—Indexing scheme relating to differential amplifiers the LC comprising one or more further dif amp stages, either identical to the dif amp or not, in cascade
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Logic Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/028253 WO2022018823A1 (ja) | 2020-07-21 | 2020-07-21 | ドライバ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022018823A1 true JPWO2022018823A1 (ja) | 2022-01-27 |
JP7420258B2 JP7420258B2 (ja) | 2024-01-23 |
Family
ID=79729346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022538526A Active JP7420258B2 (ja) | 2020-07-21 | 2020-07-21 | ドライバ回路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20230275581A1 (ja) |
JP (1) | JP7420258B2 (ja) |
WO (1) | WO2022018823A1 (ja) |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS631211A (ja) * | 1986-06-20 | 1988-01-06 | Fujitsu Ltd | インタフエイス回路 |
JPH02170458A (ja) * | 1988-12-22 | 1990-07-02 | Sony Corp | 保護回路 |
JPH07226557A (ja) * | 1994-02-15 | 1995-08-22 | Hitachi Ltd | 電子回路およびこれを用いた半導体装置 |
JP2000510653A (ja) * | 1997-04-16 | 2000-08-15 | ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ | 高速集積回路のための分散型esd保護デバイス |
JP2003023101A (ja) * | 2001-07-05 | 2003-01-24 | Mitsubishi Electric Corp | 半導体装置 |
US20060256489A1 (en) * | 2005-05-10 | 2006-11-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection circuits with impedance matching for radio-frequency applications |
JP2010233140A (ja) * | 2009-03-30 | 2010-10-14 | Hitachi Ltd | 半導体集積回路装置 |
JP2011228372A (ja) * | 2010-04-16 | 2011-11-10 | Toshiba Corp | 半導体集積回路装置 |
US20130308232A1 (en) * | 2012-05-16 | 2013-11-21 | Nxp B.V. | Protection circuit |
JP2017175008A (ja) * | 2016-03-24 | 2017-09-28 | アンリツ株式会社 | Esd保護回路およびesd保護方法 |
CN108322195A (zh) * | 2017-01-16 | 2018-07-24 | 天津大学(青岛)海洋工程研究院有限公司 | 一种具有静电放电保护电路的功率放大器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2838836B2 (ja) * | 1990-04-26 | 1998-12-16 | 富士通株式会社 | 半導体集積回路及び半導体集積回路装置 |
TW431042B (en) * | 1999-05-18 | 2001-04-21 | Sunplus Technology Co Ltd | Electrostatic discharge protection apparatus of polydiode |
US7009827B1 (en) * | 2002-10-15 | 2006-03-07 | Silicon Image, Inc. | Voltage swing detection circuit for hot plug event or device detection via a differential link |
US6738248B1 (en) * | 2002-10-28 | 2004-05-18 | Lsi Logic Corporation | ESD protection circuit for low amplitude signals |
US7218491B2 (en) * | 2002-12-23 | 2007-05-15 | Intel Corporation | Electrostatic discharge protection unit including equalization |
US8346198B2 (en) * | 2005-06-30 | 2013-01-01 | Silicon Laboratories Inc. | Low noise amplifier for a radio receiver |
US9019669B1 (en) * | 2012-12-19 | 2015-04-28 | Pmc-Sierra Us, Inc. | Distributed electrostatic discharge protection circuit |
US9438188B2 (en) * | 2014-09-15 | 2016-09-06 | Qualcomm Incorporated | Common-gate amplifier for high-speed DC-coupling communications |
US9432230B1 (en) * | 2015-10-21 | 2016-08-30 | Freescale Semiconductor, Inc. | Passive equalizer capable of use in a receiver |
US20190089150A1 (en) * | 2017-09-19 | 2019-03-21 | Kandou Labs, S.A. | Distributed electrostatic discharge protection for chip-to-chip communications interface |
JP2022081070A (ja) * | 2020-11-19 | 2022-05-31 | 住友電気工業株式会社 | 静電気保護回路および半導体集積回路 |
-
2020
- 2020-07-21 US US18/005,938 patent/US20230275581A1/en active Pending
- 2020-07-21 WO PCT/JP2020/028253 patent/WO2022018823A1/ja active Application Filing
- 2020-07-21 JP JP2022538526A patent/JP7420258B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS631211A (ja) * | 1986-06-20 | 1988-01-06 | Fujitsu Ltd | インタフエイス回路 |
JPH02170458A (ja) * | 1988-12-22 | 1990-07-02 | Sony Corp | 保護回路 |
JPH07226557A (ja) * | 1994-02-15 | 1995-08-22 | Hitachi Ltd | 電子回路およびこれを用いた半導体装置 |
JP2000510653A (ja) * | 1997-04-16 | 2000-08-15 | ザ ボード オブ トラスティーズ オブ ザ リーランド スタンフォード ジュニア ユニバーシティ | 高速集積回路のための分散型esd保護デバイス |
JP2003023101A (ja) * | 2001-07-05 | 2003-01-24 | Mitsubishi Electric Corp | 半導体装置 |
US20060256489A1 (en) * | 2005-05-10 | 2006-11-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection circuits with impedance matching for radio-frequency applications |
JP2010233140A (ja) * | 2009-03-30 | 2010-10-14 | Hitachi Ltd | 半導体集積回路装置 |
JP2011228372A (ja) * | 2010-04-16 | 2011-11-10 | Toshiba Corp | 半導体集積回路装置 |
US20130308232A1 (en) * | 2012-05-16 | 2013-11-21 | Nxp B.V. | Protection circuit |
JP2017175008A (ja) * | 2016-03-24 | 2017-09-28 | アンリツ株式会社 | Esd保護回路およびesd保護方法 |
CN108322195A (zh) * | 2017-01-16 | 2018-07-24 | 天津大学(青岛)海洋工程研究院有限公司 | 一种具有静电放电保护电路的功率放大器 |
Also Published As
Publication number | Publication date |
---|---|
US20230275581A1 (en) | 2023-08-31 |
JP7420258B2 (ja) | 2024-01-23 |
WO2022018823A1 (ja) | 2022-01-27 |
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