JPWO2022016124A5 - - Google Patents
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- Publication number
- JPWO2022016124A5 JPWO2022016124A5 JP2023502905A JP2023502905A JPWO2022016124A5 JP WO2022016124 A5 JPWO2022016124 A5 JP WO2022016124A5 JP 2023502905 A JP2023502905 A JP 2023502905A JP 2023502905 A JP2023502905 A JP 2023502905A JP WO2022016124 A5 JPWO2022016124 A5 JP WO2022016124A5
- Authority
- JP
- Japan
- Prior art keywords
- optionally substituted
- tantalum
- deposition
- based precursor
- organometallic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 35
- 238000000151 deposition Methods 0.000 claims 26
- 229910052715 tantalum Inorganic materials 0.000 claims 20
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 20
- 239000002243 precursor Substances 0.000 claims 18
- 230000005855 radiation Effects 0.000 claims 18
- 239000011248 coating agent Substances 0.000 claims 17
- 238000000576 coating method Methods 0.000 claims 17
- 150000002902 organometallic compounds Chemical class 0.000 claims 17
- 230000008021 deposition Effects 0.000 claims 15
- 238000000059 patterning Methods 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 9
- 125000002524 organometallic group Chemical group 0.000 claims 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims 6
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 claims 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 5
- 239000003446 ligand Substances 0.000 claims 5
- 239000000376 reactant Substances 0.000 claims 5
- 125000000547 substituted alkyl group Chemical group 0.000 claims 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 4
- 125000001475 halogen functional group Chemical group 0.000 claims 4
- 238000010926 purge Methods 0.000 claims 4
- 125000003107 substituted aryl group Chemical group 0.000 claims 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000002947 alkylene group Chemical group 0.000 claims 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims 2
- 125000000623 heterocyclic group Chemical group 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 238000000206 photolithography Methods 0.000 claims 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims 2
- 125000005415 substituted alkoxy group Chemical group 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 claims 2
- 125000004665 trialkylsilyl group Chemical group 0.000 claims 2
- 229910015844 BCl3 Inorganic materials 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910006124 SOCl2 Inorganic materials 0.000 claims 1
- 125000004450 alkenylene group Chemical group 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000001841 imino group Chemical group [H]N=* 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 150000002576 ketones Chemical class 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 125000005346 substituted cycloalkyl group Chemical group 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 125000005270 trialkylamine group Chemical group 0.000 claims 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062705853P | 2020-07-17 | 2020-07-17 | |
| US62/705,853 | 2020-07-17 | ||
| PCT/US2021/042104 WO2022016124A1 (en) | 2020-07-17 | 2021-07-16 | Photoresists containing tantalum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023534961A JP2023534961A (ja) | 2023-08-15 |
| JPWO2022016124A5 true JPWO2022016124A5 (enrdf_load_stackoverflow) | 2024-07-19 |
Family
ID=79555033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023502905A Pending JP2023534961A (ja) | 2020-07-17 | 2021-07-16 | タンタルを含むフォトレジスト |
Country Status (6)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| WO2020102085A1 (en) | 2018-11-14 | 2020-05-22 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| KR102731166B1 (ko) | 2018-12-20 | 2024-11-18 | 램 리써치 코포레이션 | 레지스트들의 건식 현상 (dry development) |
| TWI849083B (zh) | 2019-03-18 | 2024-07-21 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| SG11202108851RA (en) | 2020-01-15 | 2021-09-29 | Lam Res Corp | Underlayer for photoresist adhesion and dose reduction |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| CN115152008A (zh) | 2020-11-13 | 2022-10-04 | 朗姆研究公司 | 用于干法去除光致抗蚀剂的处理工具 |
| WO2022125388A1 (en) * | 2020-12-08 | 2022-06-16 | Lam Research Corporation | Photoresist development with organic vapor |
| US20230408916A1 (en) * | 2022-06-06 | 2023-12-21 | Inpria Corpoartion | Gas-based development of organometallic resist in an oxidizing halogen-donating environment |
| US20240141497A1 (en) * | 2022-10-26 | 2024-05-02 | Applied Materials, Inc. | Dielectric film surface restoration with reductive plasma |
| JPWO2024157943A1 (enrdf_load_stackoverflow) * | 2023-01-27 | 2024-08-02 | ||
| US20240393684A1 (en) * | 2023-05-23 | 2024-11-28 | Samsung Sdi Co., Ltd. | Method of forming patterns |
| WO2024242121A1 (ja) * | 2023-05-24 | 2024-11-28 | 東京応化工業株式会社 | パターン形成方法及び金属化合物含有膜用処理液 |
| WO2024242120A1 (ja) * | 2023-05-24 | 2024-11-28 | 東京応化工業株式会社 | パターン形成方法及び金属化合物含有膜用処理液 |
| KR20250009842A (ko) * | 2023-07-11 | 2025-01-20 | 광주과학기술원 | 건식 현상이 가능한 포토레지스트 조성물 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102112654B (zh) * | 2008-08-01 | 2013-03-20 | 乔治洛德方法研究和开发液化空气有限公司 | 在基质上形成含钽层的方法 |
| US9176377B2 (en) * | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| WO2013007442A1 (en) * | 2011-07-08 | 2013-01-17 | Asml Netherlands B.V. | Lithographic patterning process and resists to use therein |
| US8703386B2 (en) * | 2012-02-27 | 2014-04-22 | International Business Machines Corporation | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| US9324606B2 (en) * | 2014-01-09 | 2016-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned repairing process for barrier layer |
| US9778561B2 (en) * | 2014-01-31 | 2017-10-03 | Lam Research Corporation | Vacuum-integrated hardmask processes and apparatus |
| US9922839B2 (en) * | 2015-06-23 | 2018-03-20 | Lam Research Corporation | Low roughness EUV lithography |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| JP2018017780A (ja) * | 2016-07-25 | 2018-02-01 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
| US10494715B2 (en) * | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| CN112020676A (zh) * | 2018-05-11 | 2020-12-01 | 朗姆研究公司 | 制造euv可图案化硬掩模的方法 |
| KR102207893B1 (ko) * | 2018-05-25 | 2021-01-25 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
-
2021
- 2021-07-16 US US18/005,328 patent/US20230288798A1/en active Pending
- 2021-07-16 CN CN202180061016.1A patent/CN116134381A/zh active Pending
- 2021-07-16 WO PCT/US2021/042104 patent/WO2022016124A1/en active Application Filing
- 2021-07-16 KR KR1020237005181A patent/KR102846049B1/ko active Active
- 2021-07-16 JP JP2023502905A patent/JP2023534961A/ja active Pending
- 2021-07-19 TW TW110126442A patent/TW202217446A/zh unknown
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