JPWO2021229787A1 - - Google Patents
Info
- Publication number
- JPWO2021229787A1 JPWO2021229787A1 JP2021555838A JP2021555838A JPWO2021229787A1 JP WO2021229787 A1 JPWO2021229787 A1 JP WO2021229787A1 JP 2021555838 A JP2021555838 A JP 2021555838A JP 2021555838 A JP2021555838 A JP 2021555838A JP WO2021229787 A1 JPWO2021229787 A1 JP WO2021229787A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/26—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors
- G01M3/28—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors for pipes, cables or tubes; for pipe joints or seals; for valves ; for welds
- G01M3/2876—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors for pipes, cables or tubes; for pipe joints or seals; for valves ; for welds for valves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/019391 WO2021229787A1 (ja) | 2020-05-15 | 2020-05-15 | プラズマ処理装置の検査方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021229787A1 true JPWO2021229787A1 (ja) | 2021-11-18 |
JP7168794B2 JP7168794B2 (ja) | 2022-11-09 |
Family
ID=78525569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021555838A Active JP7168794B2 (ja) | 2020-05-15 | 2020-05-15 | プラズマ処理装置の検査方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220328288A1 (ja) |
JP (1) | JP7168794B2 (ja) |
KR (1) | KR102511756B1 (ja) |
CN (1) | CN113950733A (ja) |
TW (1) | TWI763381B (ja) |
WO (1) | WO2021229787A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210095798A (ko) * | 2020-01-23 | 2021-08-03 | 에이에스엠 아이피 홀딩 비.브이. | 반응 챔버 압력을 안정화하기 위한 시스템 및 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003240669A (ja) * | 2002-02-21 | 2003-08-27 | Nippon Sanso Corp | ガス供給設備及び漏洩検査方法並びにガス供給方法 |
JP2016046503A (ja) * | 2014-08-20 | 2016-04-04 | 東京エレクトロン株式会社 | ガス供給系、プラズマ処理装置、及びプラズマ処理装置の運用方法 |
JP2017032305A (ja) * | 2015-07-29 | 2017-02-09 | 東京エレクトロン株式会社 | ガス供給系のバルブのリークを検査する方法 |
JP2018195689A (ja) * | 2017-05-17 | 2018-12-06 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP2019009250A (ja) * | 2017-06-23 | 2019-01-17 | 東京エレクトロン株式会社 | ガス供給系を検査する方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030207021A1 (en) * | 2000-04-28 | 2003-11-06 | Hiroshi Izawa | Deposited-film formation apparatus, deposited-film formation process, vacuum system, leak judgment method, and computer-readable recording medium with recorded leak-judgment- executable program |
JP4866682B2 (ja) * | 2005-09-01 | 2012-02-01 | 株式会社フジキン | 圧力センサを保有する流量制御装置を用いた流体供給系の異常検出方法 |
JP2008072030A (ja) * | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法 |
JP4870633B2 (ja) * | 2007-08-29 | 2012-02-08 | シーケーディ株式会社 | 流量検定システム及び流量検定方法 |
JP4598044B2 (ja) * | 2007-10-29 | 2010-12-15 | シーケーディ株式会社 | 流量検定故障診断装置、流量検定故障診断方法及び流量検定故障診断プログラム |
JP2013153029A (ja) * | 2012-01-25 | 2013-08-08 | Hitachi High-Technologies Corp | プラズマ処理装置及びプラズマ処理方法 |
JP6037707B2 (ja) | 2012-08-07 | 2016-12-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置の診断方法 |
-
2020
- 2020-05-15 KR KR1020217018855A patent/KR102511756B1/ko active IP Right Grant
- 2020-05-15 US US17/438,007 patent/US20220328288A1/en active Pending
- 2020-05-15 WO PCT/JP2020/019391 patent/WO2021229787A1/ja active Application Filing
- 2020-05-15 CN CN202080007858.4A patent/CN113950733A/zh active Pending
- 2020-05-15 JP JP2021555838A patent/JP7168794B2/ja active Active
-
2021
- 2021-03-18 TW TW110109749A patent/TWI763381B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003240669A (ja) * | 2002-02-21 | 2003-08-27 | Nippon Sanso Corp | ガス供給設備及び漏洩検査方法並びにガス供給方法 |
JP2016046503A (ja) * | 2014-08-20 | 2016-04-04 | 東京エレクトロン株式会社 | ガス供給系、プラズマ処理装置、及びプラズマ処理装置の運用方法 |
JP2017032305A (ja) * | 2015-07-29 | 2017-02-09 | 東京エレクトロン株式会社 | ガス供給系のバルブのリークを検査する方法 |
JP2018195689A (ja) * | 2017-05-17 | 2018-12-06 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP2019009250A (ja) * | 2017-06-23 | 2019-01-17 | 東京エレクトロン株式会社 | ガス供給系を検査する方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202144753A (zh) | 2021-12-01 |
WO2021229787A1 (ja) | 2021-11-18 |
KR20210140716A (ko) | 2021-11-23 |
CN113950733A (zh) | 2022-01-18 |
TWI763381B (zh) | 2022-05-01 |
JP7168794B2 (ja) | 2022-11-09 |
KR102511756B1 (ko) | 2023-03-20 |
US20220328288A1 (en) | 2022-10-13 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210915 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210915 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220927 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221027 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7168794 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |