JPWO2021229728A1 - - Google Patents
Info
- Publication number
- JPWO2021229728A1 JPWO2021229728A1 JP2022522415A JP2022522415A JPWO2021229728A1 JP WO2021229728 A1 JPWO2021229728 A1 JP WO2021229728A1 JP 2022522415 A JP2022522415 A JP 2022522415A JP 2022522415 A JP2022522415 A JP 2022522415A JP WO2021229728 A1 JPWO2021229728 A1 JP WO2021229728A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
- H01L23/4926—Bases or plates or solder therefor characterised by the materials the materials containing semiconductor material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2020/019138 WO2021229728A1 (ja) | 2020-05-13 | 2020-05-13 | 半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021229728A1 true JPWO2021229728A1 (ja) | 2021-11-18 |
JP7414130B2 JP7414130B2 (ja) | 2024-01-16 |
Family
ID=78525508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022522415A Active JP7414130B2 (ja) | 2020-05-13 | 2020-05-13 | 半導体素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230040727A1 (ja) |
JP (1) | JP7414130B2 (ja) |
CN (1) | CN115552632A (ja) |
DE (1) | DE112020007180T5 (ja) |
WO (1) | WO2021229728A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010205991A (ja) * | 2009-03-04 | 2010-09-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2011222898A (ja) * | 2010-04-14 | 2011-11-04 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
WO2014037996A1 (ja) * | 2012-09-04 | 2014-03-13 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
US20160126197A1 (en) * | 2014-11-04 | 2016-05-05 | Infineon Technologies Ag | Semiconductor device having a stress-compensated chip electrode |
WO2017126344A1 (ja) * | 2016-01-19 | 2017-07-27 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置を製造する方法 |
JP2019125758A (ja) * | 2018-01-19 | 2019-07-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2020035812A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5669780B2 (ja) | 2012-03-21 | 2015-02-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
-
2020
- 2020-05-13 CN CN202080100641.8A patent/CN115552632A/zh active Pending
- 2020-05-13 JP JP2022522415A patent/JP7414130B2/ja active Active
- 2020-05-13 DE DE112020007180.4T patent/DE112020007180T5/de active Pending
- 2020-05-13 US US17/759,134 patent/US20230040727A1/en active Pending
- 2020-05-13 WO PCT/JP2020/019138 patent/WO2021229728A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010205991A (ja) * | 2009-03-04 | 2010-09-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2011222898A (ja) * | 2010-04-14 | 2011-11-04 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
WO2014037996A1 (ja) * | 2012-09-04 | 2014-03-13 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
US20160126197A1 (en) * | 2014-11-04 | 2016-05-05 | Infineon Technologies Ag | Semiconductor device having a stress-compensated chip electrode |
WO2017126344A1 (ja) * | 2016-01-19 | 2017-07-27 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置を製造する方法 |
JP2019125758A (ja) * | 2018-01-19 | 2019-07-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2020035812A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
Also Published As
Publication number | Publication date |
---|---|
CN115552632A (zh) | 2022-12-30 |
US20230040727A1 (en) | 2023-02-09 |
DE112020007180T5 (de) | 2023-04-20 |
WO2021229728A1 (ja) | 2021-11-18 |
JP7414130B2 (ja) | 2024-01-16 |
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