JPWO2021229728A1 - - Google Patents

Info

Publication number
JPWO2021229728A1
JPWO2021229728A1 JP2022522415A JP2022522415A JPWO2021229728A1 JP WO2021229728 A1 JPWO2021229728 A1 JP WO2021229728A1 JP 2022522415 A JP2022522415 A JP 2022522415A JP 2022522415 A JP2022522415 A JP 2022522415A JP WO2021229728 A1 JPWO2021229728 A1 JP WO2021229728A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022522415A
Other versions
JP7414130B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021229728A1 publication Critical patent/JPWO2021229728A1/ja
Application granted granted Critical
Publication of JP7414130B2 publication Critical patent/JP7414130B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/7685Barrier, adhesion or liner layers the layer covering a conductive structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67288Monitoring of warpage, curvature, damage, defects or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
    • H01L23/4926Bases or plates or solder therefor characterised by the materials the materials containing semiconductor material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2022522415A 2020-05-13 2020-05-13 半導体素子 Active JP7414130B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/019138 WO2021229728A1 (ja) 2020-05-13 2020-05-13 半導体素子

Publications (2)

Publication Number Publication Date
JPWO2021229728A1 true JPWO2021229728A1 (ja) 2021-11-18
JP7414130B2 JP7414130B2 (ja) 2024-01-16

Family

ID=78525508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022522415A Active JP7414130B2 (ja) 2020-05-13 2020-05-13 半導体素子

Country Status (5)

Country Link
US (1) US20230040727A1 (ja)
JP (1) JP7414130B2 (ja)
CN (1) CN115552632A (ja)
DE (1) DE112020007180T5 (ja)
WO (1) WO2021229728A1 (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205991A (ja) * 2009-03-04 2010-09-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011222898A (ja) * 2010-04-14 2011-11-04 Fuji Electric Co Ltd 半導体装置の製造方法
WO2014037996A1 (ja) * 2012-09-04 2014-03-13 三菱電機株式会社 半導体装置、半導体装置の製造方法
US20160126197A1 (en) * 2014-11-04 2016-05-05 Infineon Technologies Ag Semiconductor device having a stress-compensated chip electrode
WO2017126344A1 (ja) * 2016-01-19 2017-07-27 三菱電機株式会社 電力用半導体装置および電力用半導体装置を製造する方法
JP2019125758A (ja) * 2018-01-19 2019-07-25 三菱電機株式会社 半導体装置の製造方法
JP2020035812A (ja) * 2018-08-28 2020-03-05 株式会社 日立パワーデバイス 半導体装置および電力変換装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5669780B2 (ja) 2012-03-21 2015-02-18 三菱電機株式会社 半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205991A (ja) * 2009-03-04 2010-09-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2011222898A (ja) * 2010-04-14 2011-11-04 Fuji Electric Co Ltd 半導体装置の製造方法
WO2014037996A1 (ja) * 2012-09-04 2014-03-13 三菱電機株式会社 半導体装置、半導体装置の製造方法
US20160126197A1 (en) * 2014-11-04 2016-05-05 Infineon Technologies Ag Semiconductor device having a stress-compensated chip electrode
WO2017126344A1 (ja) * 2016-01-19 2017-07-27 三菱電機株式会社 電力用半導体装置および電力用半導体装置を製造する方法
JP2019125758A (ja) * 2018-01-19 2019-07-25 三菱電機株式会社 半導体装置の製造方法
JP2020035812A (ja) * 2018-08-28 2020-03-05 株式会社 日立パワーデバイス 半導体装置および電力変換装置

Also Published As

Publication number Publication date
CN115552632A (zh) 2022-12-30
US20230040727A1 (en) 2023-02-09
DE112020007180T5 (de) 2023-04-20
WO2021229728A1 (ja) 2021-11-18
JP7414130B2 (ja) 2024-01-16

Similar Documents

Publication Publication Date Title
BR112023005462A2 (ja)
BR112022024743A2 (ja)
BR102021018859A2 (ja)
BR102021015500A2 (ja)
BR112022009896A2 (ja)
BR102021007058A2 (ja)
BR102020022030A2 (ja)
BR112023004146A2 (ja)
BR112023011539A2 (ja)
BR112023011610A2 (ja)
BR112023008976A2 (ja)
BR112023009656A2 (ja)
BR112023006729A2 (ja)
BR102021018167A2 (ja)
BR102021017576A2 (ja)
BR102021016837A2 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016200A2 (ja)
BR102021016176A2 (ja)
BR102021015566A2 (ja)
BR102021015450A8 (ja)
BR102021015220A2 (ja)
BR102021015247A2 (ja)
BR102021014044A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230404

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230512

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230704

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230821

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20231128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231211

R150 Certificate of patent or registration of utility model

Ref document number: 7414130

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150