JPWO2021186944A1 - - Google Patents

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Publication number
JPWO2021186944A1
JPWO2021186944A1 JP2022508124A JP2022508124A JPWO2021186944A1 JP WO2021186944 A1 JPWO2021186944 A1 JP WO2021186944A1 JP 2022508124 A JP2022508124 A JP 2022508124A JP 2022508124 A JP2022508124 A JP 2022508124A JP WO2021186944 A1 JPWO2021186944 A1 JP WO2021186944A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022508124A
Other versions
JP7334849B2 (ja
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Publication of JPWO2021186944A1 publication Critical patent/JPWO2021186944A1/ja
Application granted granted Critical
Publication of JP7334849B2 publication Critical patent/JP7334849B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022508124A 2020-03-17 2021-02-08 シリコン単結晶基板中のドナー濃度の制御方法 Active JP7334849B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020046938 2020-03-17
JP2020046938 2020-03-17
PCT/JP2021/004559 WO2021186944A1 (ja) 2020-03-17 2021-02-08 シリコン単結晶基板中のドナー濃度の制御方法

Publications (2)

Publication Number Publication Date
JPWO2021186944A1 true JPWO2021186944A1 (ja) 2021-09-23
JP7334849B2 JP7334849B2 (ja) 2023-08-29

Family

ID=77771836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022508124A Active JP7334849B2 (ja) 2020-03-17 2021-02-08 シリコン単結晶基板中のドナー濃度の制御方法

Country Status (4)

Country Link
EP (1) EP4123686A4 (ja)
JP (1) JP7334849B2 (ja)
CN (1) CN115280472A (ja)
WO (1) WO2021186944A1 (ja)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344977A (ja) * 2005-06-08 2006-12-21 Infineon Technologies Ag 阻止ゾーンを半導体基板に製造する方法、および、阻止ゾーンを有する半導体部品
WO2007055352A1 (ja) * 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
WO2011052787A1 (ja) * 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
WO2013141221A1 (ja) * 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
JP2015037194A (ja) * 2013-08-14 2015-02-23 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体ディスクの後ドーピング方法
JP2016096338A (ja) * 2014-11-14 2016-05-26 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体装置を形成する方法および半導体装置
JP2017063187A (ja) * 2015-08-26 2017-03-30 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体デバイス、シリコンウェハ、及びシリコンウェハの製造方法
JP2019062189A (ja) * 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
WO2019239762A1 (ja) * 2018-06-12 2019-12-19 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3341378B2 (ja) * 1993-08-25 2002-11-05 富士通株式会社 シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法
JPH07301592A (ja) * 1994-05-09 1995-11-14 Fujitsu Ltd 半導体装置の製造方法及び気体中の水素濃度測定方法
JP3684962B2 (ja) 1999-12-01 2005-08-17 富士電機デバイステクノロジー株式会社 半導体装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344977A (ja) * 2005-06-08 2006-12-21 Infineon Technologies Ag 阻止ゾーンを半導体基板に製造する方法、および、阻止ゾーンを有する半導体部品
WO2007055352A1 (ja) * 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
WO2011052787A1 (ja) * 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
WO2013141221A1 (ja) * 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
JP2015037194A (ja) * 2013-08-14 2015-02-23 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体ディスクの後ドーピング方法
JP2016096338A (ja) * 2014-11-14 2016-05-26 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体装置を形成する方法および半導体装置
JP2017063187A (ja) * 2015-08-26 2017-03-30 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体デバイス、シリコンウェハ、及びシリコンウェハの製造方法
JP2019062189A (ja) * 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
WO2019239762A1 (ja) * 2018-06-12 2019-12-19 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法

Also Published As

Publication number Publication date
WO2021186944A1 (ja) 2021-09-23
EP4123686A1 (en) 2023-01-25
JP7334849B2 (ja) 2023-08-29
EP4123686A4 (en) 2024-05-01
CN115280472A (zh) 2022-11-01

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