JPWO2021176913A1 - - Google Patents

Info

Publication number
JPWO2021176913A1
JPWO2021176913A1 JP2022505043A JP2022505043A JPWO2021176913A1 JP WO2021176913 A1 JPWO2021176913 A1 JP WO2021176913A1 JP 2022505043 A JP2022505043 A JP 2022505043A JP 2022505043 A JP2022505043 A JP 2022505043A JP WO2021176913 A1 JPWO2021176913 A1 JP WO2021176913A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022505043A
Other versions
JPWO2021176913A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021176913A1 publication Critical patent/JPWO2021176913A1/ja
Publication of JPWO2021176913A5 publication Critical patent/JPWO2021176913A5/ja
Priority to JP2023208933A priority Critical patent/JP2024022657A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2022505043A 2020-03-04 2021-02-01 Pending JPWO2021176913A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023208933A JP2024022657A (ja) 2020-03-04 2023-12-12 処理液、処理液収容体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020036719 2020-03-04
PCT/JP2021/003521 WO2021176913A1 (ja) 2020-03-04 2021-02-01 処理液、処理液収容体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023208933A Division JP2024022657A (ja) 2020-03-04 2023-12-12 処理液、処理液収容体

Publications (2)

Publication Number Publication Date
JPWO2021176913A1 true JPWO2021176913A1 (ja) 2021-09-10
JPWO2021176913A5 JPWO2021176913A5 (ja) 2022-10-19

Family

ID=77614011

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022505043A Pending JPWO2021176913A1 (ja) 2020-03-04 2021-02-01
JP2023208933A Pending JP2024022657A (ja) 2020-03-04 2023-12-12 処理液、処理液収容体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023208933A Pending JP2024022657A (ja) 2020-03-04 2023-12-12 処理液、処理液収容体

Country Status (4)

Country Link
US (1) US20230017832A1 (ja)
JP (2) JPWO2021176913A1 (ja)
TW (1) TW202146629A (ja)
WO (1) WO2021176913A1 (ja)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002361819A (ja) * 2001-06-06 2002-12-18 Mitsubishi Chemicals Corp ポジ型平版印刷版の作製方法
JP2008513552A (ja) * 2004-09-15 2008-05-01 ハネウェル・インターナショナル・インコーポレーテッド 処理剤物質
JP2014093407A (ja) * 2012-11-02 2014-05-19 Fujifilm Corp エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
WO2014115758A1 (ja) * 2013-01-24 2014-07-31 昭和電工株式会社 エッチング液
JP2016527707A (ja) * 2013-06-06 2016-09-08 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 窒化チタンを選択的にエッチングするための組成物及び方法
WO2017099121A1 (ja) * 2015-12-11 2017-06-15 富士フイルム株式会社 半導体デバイス用処理液の保管方法、処理液収容体
WO2018061670A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 処理液、および積層体の処理方法
JP2018526495A (ja) * 2015-08-03 2018-09-13 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 洗浄組成物
WO2019049610A1 (ja) * 2017-09-07 2019-03-14 株式会社フジミインコーポレーテッド 研磨用組成物およびシリコン基板研磨方法
JP2019070081A (ja) * 2017-10-10 2019-05-09 Ａｇｃ株式会社 水性分散液、被膜及び被覆織布
JP2019080049A (ja) * 2017-10-20 2019-05-23 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP2019165218A (ja) * 2018-03-09 2019-09-26 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中にシリコン−ゲルマニウム／ゲルマニウムスタックからシリコン−ゲルマニウム合金を選択的に除去するためのエッチング溶液
JP2020017732A (ja) * 2018-07-26 2020-01-30 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ＴｉＮハードマスク除去及びエッチング残渣クリーニング用組成物

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002361819A (ja) * 2001-06-06 2002-12-18 Mitsubishi Chemicals Corp ポジ型平版印刷版の作製方法
JP2008513552A (ja) * 2004-09-15 2008-05-01 ハネウェル・インターナショナル・インコーポレーテッド 処理剤物質
JP2014093407A (ja) * 2012-11-02 2014-05-19 Fujifilm Corp エッチング液、これを用いたエッチング方法及び半導体素子の製造方法
WO2014115758A1 (ja) * 2013-01-24 2014-07-31 昭和電工株式会社 エッチング液
JP2016527707A (ja) * 2013-06-06 2016-09-08 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 窒化チタンを選択的にエッチングするための組成物及び方法
JP2018526495A (ja) * 2015-08-03 2018-09-13 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 洗浄組成物
WO2017099121A1 (ja) * 2015-12-11 2017-06-15 富士フイルム株式会社 半導体デバイス用処理液の保管方法、処理液収容体
WO2018061670A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 処理液、および積層体の処理方法
WO2019049610A1 (ja) * 2017-09-07 2019-03-14 株式会社フジミインコーポレーテッド 研磨用組成物およびシリコン基板研磨方法
JP2019070081A (ja) * 2017-10-10 2019-05-09 Ａｇｃ株式会社 水性分散液、被膜及び被覆織布
JP2019080049A (ja) * 2017-10-20 2019-05-23 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP2019165218A (ja) * 2018-03-09 2019-09-26 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中にシリコン−ゲルマニウム／ゲルマニウムスタックからシリコン−ゲルマニウム合金を選択的に除去するためのエッチング溶液
JP2020017732A (ja) * 2018-07-26 2020-01-30 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ＴｉＮハードマスク除去及びエッチング残渣クリーニング用組成物

Also Published As

Publication number Publication date
WO2021176913A1 (ja) 2021-09-10
TW202146629A (zh) 2021-12-16
US20230017832A1 (en) 2023-01-19
JP2024022657A (ja) 2024-02-16

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