JPWO2021172104A1 - - Google Patents

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Publication number
JPWO2021172104A1
JPWO2021172104A1 JP2022503280A JP2022503280A JPWO2021172104A1 JP WO2021172104 A1 JPWO2021172104 A1 JP WO2021172104A1 JP 2022503280 A JP2022503280 A JP 2022503280A JP 2022503280 A JP2022503280 A JP 2022503280A JP WO2021172104 A1 JPWO2021172104 A1 JP WO2021172104A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022503280A
Other versions
JP7286870B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2021172104A1 publication Critical patent/JPWO2021172104A1/ja
Application granted granted Critical
Publication of JP7286870B2 publication Critical patent/JP7286870B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/06—Multi-walled nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/36—Diameter

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2022503280A 2020-02-26 2021-02-16 ペリクル膜、ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法 Active JP7286870B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020030942 2020-02-26
JP2020030942 2020-02-26
PCT/JP2021/005738 WO2021172104A1 (ja) 2020-02-26 2021-02-16 ペリクル膜、ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021172104A1 true JPWO2021172104A1 (ja) 2021-09-02
JP7286870B2 JP7286870B2 (ja) 2023-06-05

Family

ID=77490169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022503280A Active JP7286870B2 (ja) 2020-02-26 2021-02-16 ペリクル膜、ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法

Country Status (7)

Country Link
US (1) US20230036846A1 (ja)
EP (1) EP4083705A4 (ja)
JP (1) JP7286870B2 (ja)
KR (1) KR20220116021A (ja)
CN (1) CN115004108A (ja)
TW (1) TW202132908A (ja)
WO (1) WO2021172104A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018008594A1 (ja) * 2016-07-05 2018-01-11 三井化学株式会社 ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法
JP2018092155A (ja) * 2016-11-30 2018-06-14 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． フォトマスク用ペリクル、それを含むレチクル、及びリソグラフィ用露光装置
JP2018194838A (ja) * 2017-05-15 2018-12-06 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ ペリクルを形成する方法
WO2019115218A1 (en) * 2017-12-12 2019-06-20 Asml Netherlands B.V. Apparatus and method for determining a condition associated with a pellicle
JP2019168502A (ja) * 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI404675B (zh) 2004-07-27 2013-08-11 Nat Inst Of Advanced Ind Scien 單層奈米碳管及定向單層奈米碳管／塊材構造體暨該等之製造方法／裝置及用途
KR101699655B1 (ko) 2013-03-15 2017-01-24 아사히 가세이 이-매터리얼즈 가부시키가이샤 펠리클막 및 펠리클
EP3404487B1 (en) 2017-05-15 2021-12-01 IMEC vzw Method for forming a carbon nanotube pellicle membrane
JP7206691B2 (ja) 2018-08-22 2023-01-18 富士フイルムビジネスイノベーション株式会社 操作パネル及び操作装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018008594A1 (ja) * 2016-07-05 2018-01-11 三井化学株式会社 ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法
JP2018092155A (ja) * 2016-11-30 2018-06-14 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． フォトマスク用ペリクル、それを含むレチクル、及びリソグラフィ用露光装置
JP2018194838A (ja) * 2017-05-15 2018-12-06 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ ペリクルを形成する方法
WO2019115218A1 (en) * 2017-12-12 2019-06-20 Asml Netherlands B.V. Apparatus and method for determining a condition associated with a pellicle
JP2019168502A (ja) * 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法

Also Published As

Publication number Publication date
EP4083705A4 (en) 2024-01-17
EP4083705A1 (en) 2022-11-02
WO2021172104A1 (ja) 2021-09-02
US20230036846A1 (en) 2023-02-02
CN115004108A (zh) 2022-09-02
KR20220116021A (ko) 2022-08-19
TW202132908A (zh) 2021-09-01
JP7286870B2 (ja) 2023-06-05

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