JPWO2021171697A1 - - Google Patents

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Publication number
JPWO2021171697A1
JPWO2021171697A1 JP2022503085A JP2022503085A JPWO2021171697A1 JP WO2021171697 A1 JPWO2021171697 A1 JP WO2021171697A1 JP 2022503085 A JP2022503085 A JP 2022503085A JP 2022503085 A JP2022503085 A JP 2022503085A JP WO2021171697 A1 JPWO2021171697 A1 JP WO2021171697A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022503085A
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Japanese (ja)
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JP7212832B2 (ja
JPWO2021171697A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2021171697A1 publication Critical patent/JPWO2021171697A1/ja
Publication of JPWO2021171697A5 publication Critical patent/JPWO2021171697A5/ja
Priority to JP2023002247A priority Critical patent/JP7764867B2/ja
Application granted granted Critical
Publication of JP7212832B2 publication Critical patent/JP7212832B2/ja
Priority to JP2025086562A priority patent/JP2025113409A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/32—Investigating strength properties of solid materials by application of mechanical stress by applying repeated or pulsating forces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0001—Type of application of the stress
    • G01N2203/0005—Repeated or cyclic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0014—Type of force applied
    • G01N2203/0016—Tensile or compressive
    • G01N2203/0017—Tensile
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0058—Kind of property studied
    • G01N2203/006—Crack, flaws, fracture or rupture
    • G01N2203/0067—Fracture or rupture
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/0058—Kind of property studied
    • G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
    • G01N2203/0073—Fatigue
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/022—Environment of the test
    • G01N2203/0222—Temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N2203/02—Details not specific for a particular testing method
    • G01N2203/026—Specifications of the specimen
    • G01N2203/0298—Manufacturing or preparing specimens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2022503085A 2020-02-26 2020-10-26 感光性樹脂組成物、感光性樹脂組成物の選別方法、パターン硬化膜の製造方法、及び半導体装置の製造方法 Active JP7212832B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023002247A JP7764867B2 (ja) 2020-02-26 2023-01-11 感光性樹脂組成物
JP2025086562A JP2025113409A (ja) 2020-02-26 2025-05-23 感光性樹脂組成物

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020030486 2020-02-26
JP2020030134 2020-02-26
JP2020030134 2020-02-26
JP2020030486 2020-02-26
PCT/JP2020/040109 WO2021171697A1 (ja) 2020-02-26 2020-10-26 感光性樹脂組成物、感光性樹脂組成物の選別方法、パターン硬化膜の製造方法、及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023002247A Division JP7764867B2 (ja) 2020-02-26 2023-01-11 感光性樹脂組成物

Publications (3)

Publication Number Publication Date
JPWO2021171697A1 true JPWO2021171697A1 (https=) 2021-09-02
JPWO2021171697A5 JPWO2021171697A5 (https=) 2022-11-11
JP7212832B2 JP7212832B2 (ja) 2023-01-26

Family

ID=77491359

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2022503085A Active JP7212832B2 (ja) 2020-02-26 2020-10-26 感光性樹脂組成物、感光性樹脂組成物の選別方法、パターン硬化膜の製造方法、及び半導体装置の製造方法
JP2023002247A Active JP7764867B2 (ja) 2020-02-26 2023-01-11 感光性樹脂組成物
JP2025086562A Withdrawn JP2025113409A (ja) 2020-02-26 2025-05-23 感光性樹脂組成物

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023002247A Active JP7764867B2 (ja) 2020-02-26 2023-01-11 感光性樹脂組成物
JP2025086562A Withdrawn JP2025113409A (ja) 2020-02-26 2025-05-23 感光性樹脂組成物

Country Status (6)

Country Link
US (1) US12405198B2 (https=)
JP (3) JP7212832B2 (https=)
KR (1) KR20220145837A (https=)
CN (1) CN115151868B (https=)
TW (1) TWI872143B (https=)
WO (1) WO2021171697A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113671794A (zh) * 2021-08-25 2021-11-19 Oppo广东移动通信有限公司 正型光刻胶及制备方法、玻璃壳体的制备方法和电子设备
WO2024190309A1 (ja) * 2023-03-13 2024-09-19 東レ株式会社 感光性組成物、硬化物、表示装置、及び硬化物の製造方法
CN117470793B (zh) * 2023-12-25 2024-03-22 湖南信健科技有限公司 一种光敏性树脂组合物的高效综合检测方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018095721A (ja) * 2016-12-13 2018-06-21 東レ株式会社 樹脂組成物、樹脂シートおよび硬化膜

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4640037B2 (ja) 2005-08-22 2011-03-02 Ｊｓｒ株式会社 ポジ型感光性絶縁樹脂組成物およびその硬化物
JP2008076583A (ja) 2006-09-20 2008-04-03 Asahi Kasei Electronics Co Ltd 硬化レリーフパターンの製造方法
JP5067028B2 (ja) 2007-06-12 2012-11-07 日立化成工業株式会社 ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス
EP2372457B1 (en) * 2008-12-26 2014-11-26 Hitachi Chemical Company, Ltd. Positive-type photosensitive resin composition, method for producing resist pattern, semiconductor device, and electronic device
JP5263603B2 (ja) * 2009-01-09 2013-08-14 日立化成株式会社 感光性樹脂組成物、感光性フィルム、レジストパターンの形成方法及びそれを用いた永久レジスト。
TWI481657B (zh) * 2010-09-15 2015-04-21 旭化成電子材料股份有限公司 A phenol resin composition and a hardened embossed pattern, and a method for manufacturing the semiconductor
US9633848B2 (en) * 2012-10-31 2017-04-25 Hitachi Chemical Company, Ltd. Photosensitive resin composition, method for producing patterned cured film, semiconductor element and electronic device
JP6776772B2 (ja) 2016-09-29 2020-10-28 東レ株式会社 感光性樹脂組成物
JP7066978B2 (ja) 2017-04-27 2022-05-16 住友ベークライト株式会社 感光性樹脂組成物
KR102425708B1 (ko) * 2017-05-10 2022-07-28 쇼와덴코머티리얼즈가부시끼가이샤 포지티브형 감광성 수지 조성물, 포지티브형 감광성 수지용 열가교제, 패턴 경화막 및 그의 제조 방법, 반도체 소자, 그리고 전자 디바이스
JP2018203959A (ja) 2017-06-09 2018-12-27 日鉄ケミカル＆マテリアル株式会社 ポリイミド及び感光性樹脂組成物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018095721A (ja) * 2016-12-13 2018-06-21 東レ株式会社 樹脂組成物、樹脂シートおよび硬化膜

Also Published As

Publication number Publication date
CN115151868A (zh) 2022-10-04
JP2023029564A (ja) 2023-03-03
JP7212832B2 (ja) 2023-01-26
TWI872143B (zh) 2025-02-11
JP2025113409A (ja) 2025-08-01
KR20220145837A (ko) 2022-10-31
JP7764867B2 (ja) 2025-11-06
WO2021171697A1 (ja) 2021-09-02
CN115151868B (zh) 2025-12-05
TW202132757A (zh) 2021-09-01
US20230104391A1 (en) 2023-04-06
US12405198B2 (en) 2025-09-02

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