JPWO2021157431A1 - - Google Patents
Info
- Publication number
- JPWO2021157431A1 JPWO2021157431A1 JP2021575742A JP2021575742A JPWO2021157431A1 JP WO2021157431 A1 JPWO2021157431 A1 JP WO2021157431A1 JP 2021575742 A JP2021575742 A JP 2021575742A JP 2021575742 A JP2021575742 A JP 2021575742A JP WO2021157431 A1 JPWO2021157431 A1 JP WO2021157431A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18347—Mesa comprising active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020019567 | 2020-02-07 | ||
PCT/JP2021/002636 WO2021157431A1 (ja) | 2020-02-07 | 2021-01-26 | 発光デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2021157431A1 true JPWO2021157431A1 (ja) | 2021-08-12 |
Family
ID=77200041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021575742A Pending JPWO2021157431A1 (ja) | 2020-02-07 | 2021-01-26 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230047126A1 (ja) |
EP (1) | EP4084242A4 (ja) |
JP (1) | JPWO2021157431A1 (ja) |
CN (1) | CN115244804A (ja) |
TW (1) | TW202137580A (ja) |
WO (1) | WO2021157431A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI844953B (zh) * | 2022-09-15 | 2024-06-11 | 台亞半導體股份有限公司 | 多層熱導反射鏡的面射型雷射 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2940644B2 (ja) | 1991-01-21 | 1999-08-25 | 日本電信電話株式会社 | 面形発光素子 |
US5656832A (en) * | 1994-03-09 | 1997-08-12 | Kabushiki Kaisha Toshiba | Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness |
US5625202A (en) * | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
KR100224881B1 (ko) * | 1996-07-25 | 1999-10-15 | 윤종용 | 표면광 레이저 |
JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
JP3684778B2 (ja) * | 1997-08-21 | 2005-08-17 | 富士ゼロックス株式会社 | 面発光型半導体レーザアレイ |
JPH11214750A (ja) * | 1998-01-27 | 1999-08-06 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体発光素子の製造方法 |
JP3622562B2 (ja) * | 1998-03-12 | 2005-02-23 | 日亜化学工業株式会社 | 窒化物半導体発光ダイオード |
US7193246B1 (en) * | 1998-03-12 | 2007-03-20 | Nichia Corporation | Nitride semiconductor device |
JP2000151025A (ja) * | 1998-11-10 | 2000-05-30 | Hitachi Ltd | 光システム |
JP2004095838A (ja) * | 2002-08-30 | 2004-03-25 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2005243900A (ja) * | 2004-02-26 | 2005-09-08 | Sony Corp | 半導体発光素子およびその駆動方法 |
JP4250603B2 (ja) * | 2005-03-28 | 2009-04-08 | キヤノン株式会社 | テラヘルツ波の発生素子、及びその製造方法 |
JP5088499B2 (ja) * | 2008-07-03 | 2012-12-05 | セイコーエプソン株式会社 | 発光装置 |
US8270447B2 (en) * | 2009-01-08 | 2012-09-18 | Furukawa Electric Co., Ltd. | Semiconductor light emitting element and manufacturing method thereof |
US8613536B2 (en) * | 2009-12-19 | 2013-12-24 | Trilumina Corporation | System and method for combining laser arrays for digital outputs |
JP2011155087A (ja) * | 2010-01-26 | 2011-08-11 | Sony Corp | 面発光型半導体レーザおよびその製造方法 |
JP6098820B2 (ja) * | 2013-08-20 | 2017-03-22 | ウシオ電機株式会社 | 半導体レーザ装置 |
US11309686B2 (en) * | 2017-06-20 | 2022-04-19 | Sony Corporation | Surface emitting laser and method of manufacturing the same |
JP2019033210A (ja) * | 2017-08-09 | 2019-02-28 | 住友電気工業株式会社 | 面発光レーザ |
JP7268349B2 (ja) | 2018-07-04 | 2023-05-08 | 東洋製罐株式会社 | 充填システムおよび充填方法 |
-
2021
- 2021-01-26 US US17/792,238 patent/US20230047126A1/en active Pending
- 2021-01-26 JP JP2021575742A patent/JPWO2021157431A1/ja active Pending
- 2021-01-26 CN CN202180010791.4A patent/CN115244804A/zh active Pending
- 2021-01-26 WO PCT/JP2021/002636 patent/WO2021157431A1/ja active Application Filing
- 2021-01-26 EP EP21750147.7A patent/EP4084242A4/en active Pending
- 2021-01-29 TW TW110103374A patent/TW202137580A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP4084242A4 (en) | 2023-01-25 |
EP4084242A1 (en) | 2022-11-02 |
US20230047126A1 (en) | 2023-02-16 |
WO2021157431A1 (ja) | 2021-08-12 |
TW202137580A (zh) | 2021-10-01 |
CN115244804A (zh) | 2022-10-25 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240118 |