JPWO2021124549A1 - - Google Patents

Info

Publication number
JPWO2021124549A1
JPWO2021124549A1 JP2021565285A JP2021565285A JPWO2021124549A1 JP WO2021124549 A1 JPWO2021124549 A1 JP WO2021124549A1 JP 2021565285 A JP2021565285 A JP 2021565285A JP 2021565285 A JP2021565285 A JP 2021565285A JP WO2021124549 A1 JPWO2021124549 A1 JP WO2021124549A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021565285A
Other versions
JPWO2021124549A5 (ja
JP7113985B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021124549A1 publication Critical patent/JPWO2021124549A1/ja
Publication of JPWO2021124549A5 publication Critical patent/JPWO2021124549A5/ja
Application granted granted Critical
Publication of JP7113985B2 publication Critical patent/JP7113985B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021565285A 2019-12-20 2019-12-20 半導体素子及び半導体素子の製造方法 Active JP7113985B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/050098 WO2021124549A1 (ja) 2019-12-20 2019-12-20 半導体素子及び半導体素子の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021124549A1 true JPWO2021124549A1 (ja) 2021-06-24
JPWO2021124549A5 JPWO2021124549A5 (ja) 2022-02-17
JP7113985B2 JP7113985B2 (ja) 2022-08-05

Family

ID=76478379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021565285A Active JP7113985B2 (ja) 2019-12-20 2019-12-20 半導体素子及び半導体素子の製造方法

Country Status (2)

Country Link
JP (1) JP7113985B2 (ja)
WO (1) WO2021124549A1 (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183189A (ja) * 1991-11-08 1993-07-23 Nichia Chem Ind Ltd ｐ型窒化ガリウム系化合物半導体の製造方法。
JP2014116483A (ja) * 2012-12-11 2014-06-26 Toyoda Gosei Co Ltd 半導体素子の製造方法、および半導体素子
JP2014183146A (ja) * 2013-03-19 2014-09-29 Toyoda Gosei Co Ltd 半導体装置およびその製造方法
JP2015079894A (ja) * 2013-10-17 2015-04-23 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP2019175905A (ja) * 2018-03-27 2019-10-10 豊田合成株式会社 半導体装置の製造方法
JP2020027855A (ja) * 2018-08-10 2020-02-20 ローム株式会社 ＳｉＣ半導体装置
JP2020181891A (ja) * 2019-04-25 2020-11-05 株式会社豊田中央研究所 窒化物半導体装置および窒化物半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5183189B2 (ja) 2007-12-21 2013-04-17 株式会社タカラ 蓄熱材マット

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183189A (ja) * 1991-11-08 1993-07-23 Nichia Chem Ind Ltd ｐ型窒化ガリウム系化合物半導体の製造方法。
JP2014116483A (ja) * 2012-12-11 2014-06-26 Toyoda Gosei Co Ltd 半導体素子の製造方法、および半導体素子
JP2014183146A (ja) * 2013-03-19 2014-09-29 Toyoda Gosei Co Ltd 半導体装置およびその製造方法
JP2015079894A (ja) * 2013-10-17 2015-04-23 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP2019175905A (ja) * 2018-03-27 2019-10-10 豊田合成株式会社 半導体装置の製造方法
JP2020027855A (ja) * 2018-08-10 2020-02-20 ローム株式会社 ＳｉＣ半導体装置
JP2020181891A (ja) * 2019-04-25 2020-11-05 株式会社豊田中央研究所 窒化物半導体装置および窒化物半導体装置の製造方法

Also Published As

Publication number Publication date
WO2021124549A1 (ja) 2021-06-24
JP7113985B2 (ja) 2022-08-05

Similar Documents

Publication Publication Date Title
BR112019017762A2 (ja)
BR112021017339A2 (ja)
BR112021013854A2 (ja)
BR112021018450A2 (ja)
BR112021017939A2 (ja)
BR112021017892A2 (ja)
BR112019016141A2 (ja)
BR112021017738A2 (ja)
BR112021017782A2 (ja)
BR112019016138A2 (ja)
BR112019016142A2 (ja)
BR112021018168A2 (ja)
BR112021017728A2 (ja)
BR112021008711A2 (ja)
BR112021017234A2 (ja)
BR112021017355A2 (ja)
BR112021017173A2 (ja)
BR112021018102A2 (ja)
BR112021017083A2 (ja)
BR112021017637A2 (ja)
BR112021018452A2 (ja)
BR112021012348A2 (ja)
BR112021018250A2 (ja)
BR112021018093A2 (ja)
BR112021018084A2 (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211118

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211118

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220628

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220726

R150 Certificate of patent or registration of utility model

Ref document number: 7113985

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150