JPWO2021124549A1 - - Google Patents
Info
- Publication number
- JPWO2021124549A1 JPWO2021124549A1 JP2021565285A JP2021565285A JPWO2021124549A1 JP WO2021124549 A1 JPWO2021124549 A1 JP WO2021124549A1 JP 2021565285 A JP2021565285 A JP 2021565285A JP 2021565285 A JP2021565285 A JP 2021565285A JP WO2021124549 A1 JPWO2021124549 A1 JP WO2021124549A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/050098 WO2021124549A1 (ja) | 2019-12-20 | 2019-12-20 | 半導体素子及び半導体素子の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2021124549A1 true JPWO2021124549A1 (ja) | 2021-06-24 |
JPWO2021124549A5 JPWO2021124549A5 (ja) | 2022-02-17 |
JP7113985B2 JP7113985B2 (ja) | 2022-08-05 |
Family
ID=76478379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021565285A Active JP7113985B2 (ja) | 2019-12-20 | 2019-12-20 | 半導体素子及び半導体素子の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP7113985B2 (ja) |
WO (1) | WO2021124549A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05183189A (ja) * | 1991-11-08 | 1993-07-23 | Nichia Chem Ind Ltd | p型窒化ガリウム系化合物半導体の製造方法。 |
JP2014116483A (ja) * | 2012-12-11 | 2014-06-26 | Toyoda Gosei Co Ltd | 半導体素子の製造方法、および半導体素子 |
JP2014183146A (ja) * | 2013-03-19 | 2014-09-29 | Toyoda Gosei Co Ltd | 半導体装置およびその製造方法 |
JP2015079894A (ja) * | 2013-10-17 | 2015-04-23 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2019175905A (ja) * | 2018-03-27 | 2019-10-10 | 豊田合成株式会社 | 半導体装置の製造方法 |
JP2020027855A (ja) * | 2018-08-10 | 2020-02-20 | ローム株式会社 | SiC半導体装置 |
JP2020181891A (ja) * | 2019-04-25 | 2020-11-05 | 株式会社豊田中央研究所 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5183189B2 (ja) | 2007-12-21 | 2013-04-17 | 株式会社タカラ | 蓄熱材マット |
-
2019
- 2019-12-20 WO PCT/JP2019/050098 patent/WO2021124549A1/ja active Application Filing
- 2019-12-20 JP JP2021565285A patent/JP7113985B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05183189A (ja) * | 1991-11-08 | 1993-07-23 | Nichia Chem Ind Ltd | p型窒化ガリウム系化合物半導体の製造方法。 |
JP2014116483A (ja) * | 2012-12-11 | 2014-06-26 | Toyoda Gosei Co Ltd | 半導体素子の製造方法、および半導体素子 |
JP2014183146A (ja) * | 2013-03-19 | 2014-09-29 | Toyoda Gosei Co Ltd | 半導体装置およびその製造方法 |
JP2015079894A (ja) * | 2013-10-17 | 2015-04-23 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2019175905A (ja) * | 2018-03-27 | 2019-10-10 | 豊田合成株式会社 | 半導体装置の製造方法 |
JP2020027855A (ja) * | 2018-08-10 | 2020-02-20 | ローム株式会社 | SiC半導体装置 |
JP2020181891A (ja) * | 2019-04-25 | 2020-11-05 | 株式会社豊田中央研究所 | 窒化物半導体装置および窒化物半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2021124549A1 (ja) | 2021-06-24 |
JP7113985B2 (ja) | 2022-08-05 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211118 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211118 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220628 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220726 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7113985 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |