JPWO2021111536A1 - - Google Patents

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Publication number
JPWO2021111536A1
JPWO2021111536A1 JP2020531789A JP2020531789A JPWO2021111536A1 JP WO2021111536 A1 JPWO2021111536 A1 JP WO2021111536A1 JP 2020531789 A JP2020531789 A JP 2020531789A JP 2020531789 A JP2020531789 A JP 2020531789A JP WO2021111536 A1 JPWO2021111536 A1 JP WO2021111536A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020531789A
Other versions
JP6818946B1 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of JP6818946B1 publication Critical patent/JP6818946B1/ja
Publication of JPWO2021111536A1 publication Critical patent/JPWO2021111536A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2020531789A 2019-12-04 2019-12-04 半導体レーザ素子およびその製造方法、半導体レーザ装置 Active JP6818946B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/047331 WO2021111536A1 (ja) 2019-12-04 2019-12-04 半導体レーザ素子およびその製造方法、半導体レーザ装置

Publications (2)

Publication Number Publication Date
JP6818946B1 JP6818946B1 (ja) 2021-01-27
JPWO2021111536A1 true JPWO2021111536A1 (ja) 2021-06-10

Family

ID=74200198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020531789A Active JP6818946B1 (ja) 2019-12-04 2019-12-04 半導体レーザ素子およびその製造方法、半導体レーザ装置

Country Status (4)

Country Link
US (1) US20220344893A1 (ja)
JP (1) JP6818946B1 (ja)
CN (1) CN114762201A (ja)
WO (1) WO2021111536A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023017632A1 (ja) * 2021-08-10 2023-02-16 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、はんだ付きサブマウント、はんだ付き集合サブマウント、及び、半導体レーザ装置の検査方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294493A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 半導体発光デバイス
JP2005191209A (ja) * 2003-12-25 2005-07-14 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
KR101065076B1 (ko) * 2005-05-07 2011-09-15 삼성전자주식회사 발광소자 패키지용 서브마운트
JP2007103804A (ja) * 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP5259166B2 (ja) * 2007-12-06 2013-08-07 日本オクラロ株式会社 半導体レーザ装置
JP5380135B2 (ja) * 2009-04-03 2014-01-08 日本オクラロ株式会社 マルチビーム半導体レーザ装置
JP5625405B2 (ja) * 2010-03-12 2014-11-19 Tdk株式会社 表面実装型電子部品
JP6173994B2 (ja) * 2014-10-16 2017-08-02 ウシオオプトセミコンダクター株式会社 光半導体装置
US9543736B1 (en) * 2015-11-20 2017-01-10 International Business Machines Corporation Optimized solder pads for solder induced alignment of opto-electronic chips
WO2018158934A1 (ja) * 2017-03-03 2018-09-07 三菱電機株式会社 半導体レーザ及びその製造方法
JP6900798B2 (ja) * 2017-06-16 2021-07-07 ウシオ電機株式会社 マルチビーム型半導体レーザ素子およびマルチビーム型半導体レーザ装置

Also Published As

Publication number Publication date
JP6818946B1 (ja) 2021-01-27
US20220344893A1 (en) 2022-10-27
CN114762201A (zh) 2022-07-15
WO2021111536A1 (ja) 2021-06-10

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