JPWO2021095603A1 - - Google Patents

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Publication number
JPWO2021095603A1
JPWO2021095603A1 JP2021556037A JP2021556037A JPWO2021095603A1 JP WO2021095603 A1 JPWO2021095603 A1 JP WO2021095603A1 JP 2021556037 A JP2021556037 A JP 2021556037A JP 2021556037 A JP2021556037 A JP 2021556037A JP WO2021095603 A1 JPWO2021095603 A1 JP WO2021095603A1
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JP
Japan
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JP2021556037A
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Japanese (ja)
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JP7585602B2 (ja
JPWO2021095603A5 (https=
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/22—Configurations of stacked chips the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
JP2021556037A 2019-11-11 2020-11-04 画像表示装置の製造方法および画像表示装置 Active JP7585602B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019204187 2019-11-11
JP2019204187 2019-11-11
PCT/JP2020/041208 WO2021095603A1 (ja) 2019-11-11 2020-11-04 画像表示装置の製造方法および画像表示装置

Publications (3)

Publication Number Publication Date
JPWO2021095603A1 true JPWO2021095603A1 (https=) 2021-05-20
JPWO2021095603A5 JPWO2021095603A5 (https=) 2023-10-24
JP7585602B2 JP7585602B2 (ja) 2024-11-19

Family

ID=75912066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021556037A Active JP7585602B2 (ja) 2019-11-11 2020-11-04 画像表示装置の製造方法および画像表示装置

Country Status (5)

Country Link
US (2) US12224273B2 (https=)
JP (1) JP7585602B2 (https=)
CN (1) CN114556578A (https=)
TW (1) TWI862725B (https=)
WO (1) WO2021095603A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7652632B2 (ja) * 2021-06-09 2025-03-27 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
WO2023277466A1 (ko) * 2021-06-30 2023-01-05 엘지전자 주식회사 반도체 발광소자를 포함하는 디스플레이 장치
JPWO2023052893A1 (https=) * 2021-09-29 2023-04-06
DE112021007529T5 (de) * 2021-12-30 2024-02-29 Hubei San'an Optoelectronics Co., Ltd. Lichtemittierendes Modul, Verfahren zur Herstellung eines lichtemittierenden Moduls und Anzeigevorrichtung
TWI838985B (zh) * 2022-11-28 2024-04-11 錼創顯示科技股份有限公司 微型發光二極體顯示裝置與其製造方法
GB202218165D0 (en) * 2022-12-02 2023-01-18 Poro Tech Ltd Opto-electronic device having an electrical interconnection layer

Citations (13)

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JP2002141492A (ja) * 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP2007242645A (ja) * 2006-03-03 2007-09-20 Rohm Co Ltd 窒化物半導体発光素子及びその製造方法
JP2008135419A (ja) * 2006-10-27 2008-06-12 Canon Inc 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP2009283942A (ja) * 2008-05-22 2009-12-03 Samsung Electronics Co Ltd 発光素子および発光装置の製造方法、前記方法を用いて製造した発光素子および発光装置
JP2010219310A (ja) * 2009-03-17 2010-09-30 Sharp Corp 光デバイスおよび光デバイス構造
US20130127364A1 (en) * 2011-11-18 2013-05-23 Invensas Corporation Front facing piggyback wafer assembly
JP2016522585A (ja) * 2013-06-17 2016-07-28 ルクスビュー テクノロジー コーポレイション 反射バンク構造及び発光デバイスを組み込むための方法
JP2017045855A (ja) * 2015-08-26 2017-03-02 大日本印刷株式会社 フレキシブル透明基板及びそれを用いたシースルー型のｌｅｄ表示装置
WO2018074611A1 (ja) * 2016-10-19 2018-04-26 株式会社オルガノサーキット アクティブマトリクスｌｅｄディスプレイ
JP2018101785A (ja) * 2016-12-20 2018-06-28 エルジー ディスプレイ カンパニー リミテッド 発光ダイオードチップ及びこれを含む発光ダイオードディスプレイ装置
JP2018205456A (ja) * 2017-06-01 2018-12-27 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル
JP2019512742A (ja) * 2016-03-31 2019-05-16 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． フレキシブルディスプレイ装置の製造方法
US20190319020A1 (en) * 2018-04-17 2019-10-17 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding

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TWI479660B (zh) * 2006-08-31 2015-04-01 半導體能源研究所股份有限公司 薄膜電晶體，其製造方法，及半導體裝置
JP2008147608A (ja) 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
JP4827698B2 (ja) 2006-10-27 2011-11-30 キヤノン株式会社 発光素子の形成方法
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JP6738041B2 (ja) * 2016-04-22 2020-08-12 天馬微電子有限公司 表示装置及び表示方法
CN109564930B (zh) 2016-05-13 2023-08-15 原子能与替代能源委员会 用于生产包括多个氮化镓二极管的光电设备的方法
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WO2019049360A1 (ja) 2017-09-11 2019-03-14 凸版印刷株式会社 表示装置及び表示装置基板
US10693042B2 (en) 2017-11-23 2020-06-23 Lg Display Co., Ltd. Light-emitting device and display device using the same
KR102606570B1 (ko) * 2017-11-29 2023-11-30 삼성디스플레이 주식회사 표시패널 및 그 제조방법
JP7079106B2 (ja) 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
US10748879B2 (en) 2018-02-28 2020-08-18 Sharp Kabushiki Kaisha Image display device and display
JP7249787B2 (ja) 2018-02-28 2023-03-31 シャープ株式会社 表示素子及び表示装置
JP7248441B2 (ja) 2018-03-02 2023-03-29 シャープ株式会社 画像表示素子
US10437402B1 (en) 2018-03-27 2019-10-08 Shaoher Pan Integrated light-emitting pixel arrays based devices by bonding
CN108615740B (zh) 2018-05-26 2020-11-10 矽照光电（厦门）有限公司 柔性有源彩色半导体发光显示模块及柔性显示屏

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141492A (ja) * 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP2007242645A (ja) * 2006-03-03 2007-09-20 Rohm Co Ltd 窒化物半導体発光素子及びその製造方法
JP2008135419A (ja) * 2006-10-27 2008-06-12 Canon Inc 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP2009283942A (ja) * 2008-05-22 2009-12-03 Samsung Electronics Co Ltd 発光素子および発光装置の製造方法、前記方法を用いて製造した発光素子および発光装置
JP2010219310A (ja) * 2009-03-17 2010-09-30 Sharp Corp 光デバイスおよび光デバイス構造
US20130127364A1 (en) * 2011-11-18 2013-05-23 Invensas Corporation Front facing piggyback wafer assembly
JP2016522585A (ja) * 2013-06-17 2016-07-28 ルクスビュー テクノロジー コーポレイション 反射バンク構造及び発光デバイスを組み込むための方法
JP2017045855A (ja) * 2015-08-26 2017-03-02 大日本印刷株式会社 フレキシブル透明基板及びそれを用いたシースルー型のｌｅｄ表示装置
JP2019512742A (ja) * 2016-03-31 2019-05-16 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． フレキシブルディスプレイ装置の製造方法
WO2018074611A1 (ja) * 2016-10-19 2018-04-26 株式会社オルガノサーキット アクティブマトリクスｌｅｄディスプレイ
JP2018101785A (ja) * 2016-12-20 2018-06-28 エルジー ディスプレイ カンパニー リミテッド 発光ダイオードチップ及びこれを含む発光ダイオードディスプレイ装置
JP2018205456A (ja) * 2017-06-01 2018-12-27 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル
US20190319020A1 (en) * 2018-04-17 2019-10-17 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding

Also Published As

Publication number Publication date
US12224273B2 (en) 2025-02-11
US20220262782A1 (en) 2022-08-18
US20260123536A1 (en) 2026-04-30
TW202123453A (zh) 2021-06-16
CN114556578A (zh) 2022-05-27
TWI862725B (zh) 2024-11-21
JP7585602B2 (ja) 2024-11-19
WO2021095603A1 (ja) 2021-05-20

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