JPWO2021059882A1 - - Google Patents

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Publication number
JPWO2021059882A1
JPWO2021059882A1 JP2021548722A JP2021548722A JPWO2021059882A1 JP WO2021059882 A1 JPWO2021059882 A1 JP WO2021059882A1 JP 2021548722 A JP2021548722 A JP 2021548722A JP 2021548722 A JP2021548722 A JP 2021548722A JP WO2021059882 A1 JPWO2021059882 A1 JP WO2021059882A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021548722A
Other languages
Japanese (ja)
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JPWO2021059882A5 (https=
JP7668464B2 (ja
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Publication of JPWO2021059882A1 publication Critical patent/JPWO2021059882A1/ja
Publication of JPWO2021059882A5 publication Critical patent/JPWO2021059882A5/ja
Application granted granted Critical
Publication of JP7668464B2 publication Critical patent/JP7668464B2/ja
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Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021548722A 2019-09-26 2020-09-01 撮像装置 Active JP7668464B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019175775 2019-09-26
JP2019175775 2019-09-26
PCT/JP2020/032973 WO2021059882A1 (ja) 2019-09-26 2020-09-01 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2021059882A1 true JPWO2021059882A1 (https=) 2021-04-01
JPWO2021059882A5 JPWO2021059882A5 (https=) 2022-06-06
JP7668464B2 JP7668464B2 (ja) 2025-04-25

Family

ID=75165743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021548722A Active JP7668464B2 (ja) 2019-09-26 2020-09-01 撮像装置

Country Status (3)

Country Link
US (1) US12376391B2 (https=)
JP (1) JP7668464B2 (https=)
WO (1) WO2021059882A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7833657B2 (ja) 2021-03-16 2026-03-23 パナソニックＩｐマネジメント株式会社 撮像装置及びその駆動方法
WO2025028352A1 (ja) * 2023-08-01 2025-02-06 パナソニックＩｐマネジメント株式会社 撮像装置
WO2025047329A1 (ja) * 2023-08-31 2025-03-06 パナソニックＩｐマネジメント株式会社 撮像装置
WO2026053822A1 (ja) * 2024-09-09 2026-03-12 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09307085A (ja) * 1996-05-15 1997-11-28 Mitsubishi Electric Corp 半導体素子およびその製法
JP2012019166A (ja) * 2010-07-09 2012-01-26 Panasonic Corp 固体撮像装置
WO2013190759A1 (ja) * 2012-06-21 2013-12-27 パナソニック株式会社 固体撮像素子及びその製造方法
WO2014002361A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
JP2016127058A (ja) * 2014-12-26 2016-07-11 パナソニックＩｐマネジメント株式会社 撮像装置
JP2016127593A (ja) * 2014-12-26 2016-07-11 パナソニックＩｐマネジメント株式会社 撮像装置
JP2019024075A (ja) * 2017-07-24 2019-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2019125907A (ja) * 2018-01-16 2019-07-25 キヤノン株式会社 半導体装置および機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1328975B1 (en) * 2000-10-19 2011-04-27 Quantum Semiconductor, LLC Method of fabricating heterojunction photodiodes integrated with cmos
WO2012147302A1 (ja) 2011-04-28 2012-11-01 パナソニック株式会社 固体撮像装置及びそれを用いたカメラシステム
CN104412387B (zh) 2012-06-27 2017-11-21 松下知识产权经营株式会社 固体摄像装置
JP6355311B2 (ja) * 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
US9780137B2 (en) * 2013-11-25 2017-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming image-sensor device with epitaxial isolation feature
CN111901540B (zh) 2014-12-26 2023-05-23 松下知识产权经营株式会社 摄像装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09307085A (ja) * 1996-05-15 1997-11-28 Mitsubishi Electric Corp 半導体素子およびその製法
JP2012019166A (ja) * 2010-07-09 2012-01-26 Panasonic Corp 固体撮像装置
WO2013190759A1 (ja) * 2012-06-21 2013-12-27 パナソニック株式会社 固体撮像素子及びその製造方法
WO2014002361A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
JP2016127058A (ja) * 2014-12-26 2016-07-11 パナソニックＩｐマネジメント株式会社 撮像装置
JP2016127593A (ja) * 2014-12-26 2016-07-11 パナソニックＩｐマネジメント株式会社 撮像装置
JP2019024075A (ja) * 2017-07-24 2019-02-14 パナソニックＩｐマネジメント株式会社 撮像装置
JP2019125907A (ja) * 2018-01-16 2019-07-25 キヤノン株式会社 半導体装置および機器

Also Published As

Publication number Publication date
US20220208811A1 (en) 2022-06-30
WO2021059882A1 (ja) 2021-04-01
JP7668464B2 (ja) 2025-04-25
US12376391B2 (en) 2025-07-29

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