JPWO2021054161A1 - - Google Patents

Info

Publication number
JPWO2021054161A1
JPWO2021054161A1 JP2021546611A JP2021546611A JPWO2021054161A1 JP WO2021054161 A1 JPWO2021054161 A1 JP WO2021054161A1 JP 2021546611 A JP2021546611 A JP 2021546611A JP 2021546611 A JP2021546611 A JP 2021546611A JP WO2021054161 A1 JPWO2021054161 A1 JP WO2021054161A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021546611A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021054161A1 publication Critical patent/JPWO2021054161A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
JP2021546611A 2019-09-17 2020-09-07 Pending JPWO2021054161A1 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2019168260 2019-09-17
JP2019220288 2019-12-05
JP2019220873 2019-12-06
JP2019236662 2019-12-26
JP2020021192 2020-02-12
PCT/JP2020/033726 WO2021054161A1 (ja) 2019-09-17 2020-09-07 縮合多環芳香族化合物

Publications (1)

Publication Number Publication Date
JPWO2021054161A1 true JPWO2021054161A1 (ja) 2021-03-25

Family

ID=74883783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546611A Pending JPWO2021054161A1 (ja) 2019-09-17 2020-09-07

Country Status (6)

Country Link
US (1) US20230047095A1 (ja)
JP (1) JPWO2021054161A1 (ja)
KR (1) KR20220063189A (ja)
CN (1) CN114269754A (ja)
TW (1) TW202120513A (ja)
WO (1) WO2021054161A1 (ja)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544865B2 (ja) 1973-12-10 1979-03-10
JPS591732B2 (ja) 1981-03-04 1984-01-13 大日精化工業株式会社 ポリウレタンエラストマ−の製造方法
CN101528753B (zh) 2006-10-25 2012-05-23 国立大学法人广岛大学 缩合多环芳香族化合物及其制造方法和用途
US9796727B2 (en) 2009-02-27 2017-10-24 Nippon Kayaku Kabushiki Kaisha Field effect transistor
TWI525095B (zh) * 2011-02-25 2016-03-11 日本化藥股份有限公司 新穎的雜環式化合物，其中間體的製造方法，及其用途
TW201444852A (zh) 2013-01-22 2014-12-01 Nippon Kayaku Kk 溶液製程用之有機半導體材料以及有機半導體元件
JP6558777B2 (ja) * 2014-12-05 2019-08-14 日本化薬株式会社 有機化合物及びその用途
JP6910880B2 (ja) * 2016-08-03 2021-07-28 日本化薬株式会社 有機光電変換素子、有機光電変換素子用材料及びこれらを用いた有機撮像素子
JP6890469B2 (ja) * 2016-11-01 2021-06-18 日本化薬株式会社 撮像素子用光電変換素子用材料及びそれを含む光電変換素子
JP6906357B2 (ja) * 2017-04-28 2021-07-21 日本化薬株式会社 撮像素子用光電変換素子
JP2018190755A (ja) * 2017-04-28 2018-11-29 日本化薬株式会社 撮像素子用光電変換素子
JP6864561B2 (ja) * 2017-06-01 2021-04-28 日本化薬株式会社 撮像素子用光電変換素子用材料及びそれを含む光電変換素子
CN111263985B (zh) * 2017-10-23 2024-02-02 索尼公司 有机光电二极管中有机光电转换层的p活性材料

Also Published As

Publication number Publication date
US20230047095A1 (en) 2023-02-16
TW202120513A (zh) 2021-06-01
CN114269754A (zh) 2022-04-01
WO2021054161A1 (ja) 2021-03-25
KR20220063189A (ko) 2022-05-17

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