JPWO2021039569A1 - - Google Patents
Info
- Publication number
- JPWO2021039569A1 JPWO2021039569A1 JP2021542803A JP2021542803A JPWO2021039569A1 JP WO2021039569 A1 JPWO2021039569 A1 JP WO2021039569A1 JP 2021542803 A JP2021542803 A JP 2021542803A JP 2021542803 A JP2021542803 A JP 2021542803A JP WO2021039569 A1 JPWO2021039569 A1 JP WO2021039569A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019152508 | 2019-08-23 | ||
| PCT/JP2020/031410 WO2021039569A1 (ja) | 2019-08-23 | 2020-08-20 | 多結晶シリコンロッドおよびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021039569A1 true JPWO2021039569A1 (ja) | 2021-03-04 |
Family
ID=74683519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021542803A Pending JPWO2021039569A1 (ja) | 2019-08-23 | 2020-08-20 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20220402765A1 (ja) |
| EP (1) | EP4005977A4 (ja) |
| JP (1) | JPWO2021039569A1 (ja) |
| KR (1) | KR20220052915A (ja) |
| CN (1) | CN114206777A (ja) |
| TW (1) | TW202128560A (ja) |
| WO (1) | WO2021039569A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023140184A1 (ja) * | 2022-01-18 | 2023-07-27 | 株式会社トクヤマ | 多結晶シリコンロッド製造用反応炉、ガス供給ノズル、多結晶シリコンロッドの製造方法および多結晶シリコンロッド |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5751748B2 (ja) * | 2009-09-16 | 2015-07-22 | 信越化学工業株式会社 | 多結晶シリコン塊群および多結晶シリコン塊群の製造方法 |
| DE102010040836A1 (de) * | 2010-09-15 | 2012-03-15 | Wacker Chemie Ag | Verfahren zur Herstellung von Silicium-Dünnstäben |
| JP5579634B2 (ja) * | 2011-01-24 | 2014-08-27 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉および多結晶シリコンの製造方法 |
| JP5847104B2 (ja) | 2012-03-05 | 2016-01-20 | 株式会社トクヤマ | 多結晶シリコンの製造方法及び該製造方法に還元剤として用いる水素ガスの製造方法 |
| JP2013193931A (ja) * | 2012-03-21 | 2013-09-30 | Tokuyama Corp | 多結晶シリコンロッドの製造方法 |
| JP5984758B2 (ja) | 2013-07-31 | 2016-09-06 | 信越化学工業株式会社 | シリコン芯線の取り扱い方法 |
| DE102013221826A1 (de) * | 2013-10-28 | 2015-04-30 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
| WO2017221952A1 (ja) * | 2016-06-23 | 2017-12-28 | 三菱マテリアル株式会社 | 多結晶シリコンロッド及びその製造方法 |
| JP6732595B2 (ja) * | 2016-08-04 | 2020-07-29 | 株式会社トクヤマ | 多結晶シリコン中の金属不純物濃度測定方法 |
-
2020
- 2020-08-20 JP JP2021542803A patent/JPWO2021039569A1/ja active Pending
- 2020-08-20 EP EP20857210.7A patent/EP4005977A4/en active Pending
- 2020-08-20 WO PCT/JP2020/031410 patent/WO2021039569A1/ja unknown
- 2020-08-20 CN CN202080056738.3A patent/CN114206777A/zh active Pending
- 2020-08-20 KR KR1020227003872A patent/KR20220052915A/ko unknown
- 2020-08-20 US US17/634,269 patent/US20220402765A1/en active Pending
- 2020-08-21 TW TW109128582A patent/TW202128560A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20220052915A (ko) | 2022-04-28 |
| EP4005977A4 (en) | 2023-12-20 |
| EP4005977A1 (en) | 2022-06-01 |
| CN114206777A (zh) | 2022-03-18 |
| WO2021039569A1 (ja) | 2021-03-04 |
| US20220402765A1 (en) | 2022-12-22 |
| TW202128560A (zh) | 2021-08-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230706 |