JPWO2020262212A1 - - Google Patents

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Publication number
JPWO2020262212A1
JPWO2020262212A1 JP2021526894A JP2021526894A JPWO2020262212A1 JP WO2020262212 A1 JPWO2020262212 A1 JP WO2020262212A1 JP 2021526894 A JP2021526894 A JP 2021526894A JP 2021526894 A JP2021526894 A JP 2021526894A JP WO2020262212 A1 JPWO2020262212 A1 JP WO2020262212A1
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Japan
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JP2021526894A
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JP7361112B2 (ja
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Priority to JP2023171675A priority Critical patent/JP2023171466A/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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    • H01L23/495Lead-frames or other flat leads
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2003007967A (ja) * 2001-06-19 2003-01-10 Hitachi Ltd 半導体装置およびその製造方法並びに実装構造体
JP2004342735A (ja) * 2003-05-14 2004-12-02 Renesas Technology Corp 半導体装置および電源システム
US20150173248A1 (en) * 2013-12-16 2015-06-18 Delta Electronics (Shanghai) Co., Ltd. Power module, power converter and manufacturing method of power module
JP2016111088A (ja) * 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 半導体装置
WO2018186353A1 (ja) * 2017-04-05 2018-10-11 ローム株式会社 パワーモジュール

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JP2003007957A (ja) * 2001-06-22 2003-01-10 Matsushita Electric Works Ltd 半導体装置、及びこれを備えた電気機器
JP3812447B2 (ja) 2002-01-28 2006-08-23 富士電機デバイステクノロジー株式会社 樹脂封止形半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007967A (ja) * 2001-06-19 2003-01-10 Hitachi Ltd 半導体装置およびその製造方法並びに実装構造体
JP2004342735A (ja) * 2003-05-14 2004-12-02 Renesas Technology Corp 半導体装置および電源システム
US20150173248A1 (en) * 2013-12-16 2015-06-18 Delta Electronics (Shanghai) Co., Ltd. Power module, power converter and manufacturing method of power module
JP2016111088A (ja) * 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 半導体装置
WO2018186353A1 (ja) * 2017-04-05 2018-10-11 ローム株式会社 パワーモジュール

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