JPWO2020261574A5 - - Google Patents

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JPWO2020261574A5
JPWO2020261574A5 JP2021527309A JP2021527309A JPWO2020261574A5 JP WO2020261574 A5 JPWO2020261574 A5 JP WO2020261574A5 JP 2021527309 A JP2021527309 A JP 2021527309A JP 2021527309 A JP2021527309 A JP 2021527309A JP WO2020261574 A5 JPWO2020261574 A5 JP WO2020261574A5
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JP2021527309A
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Japanese (ja)
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JP7265624B2 (ja
JPWO2020261574A1 (https=
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Priority claimed from PCT/JP2019/025963 external-priority patent/WO2020261574A1/ja
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JP2021527309A 2019-06-28 2019-06-28 半導体膜 Active JP7265624B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/025963 WO2020261574A1 (ja) 2019-06-28 2019-06-28 半導体膜

Publications (3)

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JPWO2020261574A1 JPWO2020261574A1 (https=) 2020-12-30
JPWO2020261574A5 true JPWO2020261574A5 (https=) 2022-03-17
JP7265624B2 JP7265624B2 (ja) 2023-04-26

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JP2021527309A Active JP7265624B2 (ja) 2019-06-28 2019-06-28 半導体膜

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JP (1) JP7265624B2 (https=)
WO (1) WO2020261574A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202235664A (zh) * 2021-03-12 2022-09-16 日商信越化學工業股份有限公司 氧化物半導體膜及其成膜方法、半導體裝置
JPWO2024122463A1 (https=) 2022-12-06 2024-06-13

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6478103B2 (ja) * 2015-01-29 2019-03-06 株式会社Flosfia 成膜装置および成膜方法
JP6876895B2 (ja) * 2015-02-25 2021-05-26 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP6422159B2 (ja) 2015-02-25 2018-11-14 国立研究開発法人物質・材料研究機構 α−Ga2O3単結晶、α−Ga2O3の製造方法、および、それを用いた半導体素子

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