JPWO2020246449A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2020246449A5 JPWO2020246449A5 JP2021524846A JP2021524846A JPWO2020246449A5 JP WO2020246449 A5 JPWO2020246449 A5 JP WO2020246449A5 JP 2021524846 A JP2021524846 A JP 2021524846A JP 2021524846 A JP2021524846 A JP 2021524846A JP WO2020246449 A5 JPWO2020246449 A5 JP WO2020246449A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- film forming
- forming apparatus
- process gas
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 150000002500 ions Chemical class 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 230000032258 transport Effects 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019106442 | 2019-06-06 | ||
| JP2019106442 | 2019-06-06 | ||
| PCT/JP2020/021712 WO2020246449A1 (ja) | 2019-06-06 | 2020-06-02 | 成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020246449A1 JPWO2020246449A1 (https=) | 2020-12-10 |
| JPWO2020246449A5 true JPWO2020246449A5 (https=) | 2022-09-09 |
| JP7469303B2 JP7469303B2 (ja) | 2024-04-16 |
Family
ID=73653131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524846A Active JP7469303B2 (ja) | 2019-06-06 | 2020-06-02 | 成膜装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7469303B2 (https=) |
| CN (1) | CN113924384B (https=) |
| TW (1) | TWI758740B (https=) |
| WO (1) | WO2020246449A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240137012A (ko) * | 2022-02-22 | 2024-09-19 | 시바우라 기카이 가부시키가이샤 | 표면 처리 장치 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4423087B2 (ja) * | 2004-03-31 | 2010-03-03 | 株式会社シンクロン | スパッタ装置及び薄膜形成方法 |
| KR20130055521A (ko) * | 2011-11-18 | 2013-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자, 및 반도체 소자의 제작 방법, 및 반도체 소자를 포함하는 반도체 장치 |
| WO2016203585A1 (ja) * | 2015-06-17 | 2016-12-22 | 株式会社シンクロン | 成膜方法及び成膜装置 |
| JP6800009B2 (ja) * | 2015-12-28 | 2020-12-16 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
| JP6859162B2 (ja) * | 2017-03-31 | 2021-04-14 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
| JP7039234B2 (ja) * | 2017-09-29 | 2022-03-22 | 芝浦メカトロニクス株式会社 | 成膜装置 |
-
2020
- 2020-06-02 JP JP2021524846A patent/JP7469303B2/ja active Active
- 2020-06-02 CN CN202080040665.9A patent/CN113924384B/zh active Active
- 2020-06-02 WO PCT/JP2020/021712 patent/WO2020246449A1/ja not_active Ceased
- 2020-06-03 TW TW109118577A patent/TWI758740B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI683020B (zh) | 成膜方法及成膜裝置 | |
| TWI428953B (zh) | 藉由電子迴旋共振使用基本電漿源以處理至少一零件的表面之方法及裝置 | |
| JP6383674B2 (ja) | 基板処理装置 | |
| KR102410186B1 (ko) | 성막 장치 및 성막 기판 제조 방법 | |
| TWI599670B (zh) | Sputtering apparatus and sputtering method | |
| JP6016753B2 (ja) | 成膜装置 | |
| JPWO2020246449A5 (https=) | ||
| CN209307479U (zh) | 一种集成离子蚀刻、多弧离子以及磁控溅射为一体的真空镀膜机 | |
| JPWO2023132259A5 (https=) | ||
| JP4963992B2 (ja) | プラズマ処理装置 | |
| JP2008266681A (ja) | 表面処理装置 | |
| JP7111380B2 (ja) | スパッタ装置及びこれを用いた成膜方法 | |
| CN114182227B (zh) | 成膜装置 | |
| JP6823392B2 (ja) | 絶縁膜を形成する方法 | |
| JP7849640B2 (ja) | プラズマ処理装置 | |
| CN102936714B (zh) | 基于大面积强流脉冲电子束复合处理制备硬质碳化物陶瓷涂层的装置及其制备方法 | |
| KR101773788B1 (ko) | 플라즈마 장치 | |
| JP5524290B2 (ja) | スパッタリング装置 | |
| CN114807837A (zh) | 一种表面处理设备 | |
| TWI678222B (zh) | 加速器及粒子線治療裝置 | |
| JP2006022368A (ja) | 表面処理装置および表面処理方法 | |
| WO2024190474A1 (ja) | 表面処理装置 | |
| JPH01133318A (ja) | 薄膜処理装置 | |
| JPH0480377A (ja) | 表面処理装置 | |
| WO2024116866A1 (ja) | イオン発生装置、イオン発生方法、およびイオン発生用ターゲット |