JPWO2020246449A5 - - Google Patents
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- JPWO2020246449A5 JPWO2020246449A5 JP2021524846A JP2021524846A JPWO2020246449A5 JP WO2020246449 A5 JPWO2020246449 A5 JP WO2020246449A5 JP 2021524846 A JP2021524846 A JP 2021524846A JP 2021524846 A JP2021524846 A JP 2021524846A JP WO2020246449 A5 JPWO2020246449 A5 JP WO2020246449A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- film forming
- forming apparatus
- process gas
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007789 gas Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 150000002500 ions Chemical class 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 230000032258 transport Effects 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 1
- 238000009616 inductively coupled plasma Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Claims (9)
内部が真空とすることが可能なチャンバと、
前記チャンバ内に設けられ、前記ワークを円周の搬送経路で循環搬送する回転テーブルを有する搬送部と、
前記膜を構成する材料からなるターゲットと、前記ターゲットと前記回転テーブルとの間に導入されたスパッタガスをプラズマ化するプラズマ発生器とを有し、プラズマにより前記ターゲットをスパッタリングして前記ワーク上に膜を形成する成膜処理部と、
前記チャンバの内部空間に突出し、前記搬送経路に向かって開口する筒状体と、前記筒状体の開口を塞ぐように設けられた窓部材と、前記回転テーブルと前記筒状体との間に形成される処理空間に第1プロセスガスを導入する第1プロセスガス導入部と、前記窓部材を介して前記処理空間に電界を発生させるアンテナと、前記アンテナに高周波電圧を印加する電源と、を有し、前記第1プロセスガスをプラズマ化して前記処理空間に誘導結合プラズマを発生させ、前記膜を化学反応させる膜処理部と、
一端に開口部が設けられ、前記開口部が前記搬送経路に向かうように前記チャンバに取り付けられた筒形電極と、前記筒形電極の内部に第2プロセスガスを導入する第2プロセスガス導入部と、前記筒形電極に対して高周波電圧を印加する電源と、を有し、前記第2プロセスガスをプラズマ化して生成されたイオンを前記膜に照射するイオン照射部と、
を備え、
前記搬送部は、前記成膜処理部と前記膜処理部と前記イオン照射部とを通過するように前記ワークを循環搬送し、
前記イオン照射部は、前記ワーク上の形成途中の前記膜にイオンを照射すること、
を特徴とする成膜装置。 A film forming apparatus for forming a film on a work,
a chamber capable of being evacuated inside;
a transfer unit provided in the chamber and having a rotary table that circulates and transfers the workpiece along a circumferential transfer path;
a target made of a material that forms the film; and a plasma generator that converts the sputtering gas introduced between the target and the rotary table into plasma. a film forming processing unit that forms a film;
A cylindrical body projecting into the inner space of the chamber and opening toward the transfer path, a window member provided to close the opening of the cylindrical body, and between the rotary table and the cylindrical body. A first process gas introduction part for introducing a first process gas into a processing space to be formed, an antenna for generating an electric field in the processing space through the window member, and a power source for applying a high frequency voltage to the antenna. a film processing unit that converts the first process gas into plasma to generate inductively coupled plasma in the processing space and chemically react the film;
a cylindrical electrode having an opening at one end and attached to the chamber so that the opening faces the transfer path; and a second process gas introducing section for introducing a second process gas into the cylindrical electrode. and a power supply for applying a high-frequency voltage to the cylindrical electrode, and an ion irradiation unit for irradiating the film with ions generated by turning the second process gas into plasma;
with
The conveying unit circulates and conveys the work so as to pass through the film formation processing unit, the film processing unit, and the ion irradiation unit,
The ion irradiation unit irradiates the film in the process of being formed on the workpiece with ions;
A film forming apparatus characterized by:
を特徴とする請求項1記載の成膜装置。 The transport unit transports the work so that it passes through the ion irradiation unit after passing through the film processing unit;
The film forming apparatus according to claim 1, characterized by:
を特徴とする請求項1記載の成膜装置。 The conveying unit conveys the work so that it passes through the film processing unit after passing through the ion irradiation unit;
The film forming apparatus according to claim 1, characterized by:
前記膜処理部と前記イオン照射部とは隣接して設けられていること、
を特徴とする請求項2又は3記載の成膜装置。 The transport unit is configured to allow the circulatory transport in two directions,
The film processing section and the ion irradiation section are provided adjacent to each other;
4. The film forming apparatus according to claim 2 or 3, characterized by:
を特徴とする請求項1~4の何れかに記載の成膜装置。 wherein the first process gas comprises oxygen or nitrogen;
The film forming apparatus according to any one of claims 1 to 4, characterized by:
前記複数の前記成膜処理部は、前記ワーク上に異なる組成の前記膜を交互に積層させて形成すること、
を特徴とする請求項1~5の何れかに記載の成膜装置。 comprising a plurality of the film formation processing units,
The plurality of film forming processing units are formed by alternately stacking the films having different compositions on the workpiece;
6. The film forming apparatus according to any one of claims 1 to 5, characterized by:
を特徴とする請求項1~6の何れかに記載の成膜装置。 said second process gas comprising argon;
The film forming apparatus according to any one of claims 1 to 6, characterized by:
を特徴とする請求項1~6の何れかに記載の成膜装置。 the second process gas comprises oxygen or nitrogen, or argon and oxygen or nitrogen;
The film forming apparatus according to any one of claims 1 to 6, characterized by:
前記回転軸と、前記回転テーブルにおいて前記ワークを載置する面とは直交していることを特徴とする請求項1~8の何れか記載の成膜装置。9. The film forming apparatus according to claim 1, wherein the rotary shaft and the surface of the rotary table on which the work is placed are perpendicular to each other.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019106442 | 2019-06-06 | ||
JP2019106442 | 2019-06-06 | ||
PCT/JP2020/021712 WO2020246449A1 (en) | 2019-06-06 | 2020-06-02 | Film-forming apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2020246449A1 JPWO2020246449A1 (en) | 2020-12-10 |
JPWO2020246449A5 true JPWO2020246449A5 (en) | 2022-09-09 |
JP7469303B2 JP7469303B2 (en) | 2024-04-16 |
Family
ID=73653131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021524846A Active JP7469303B2 (en) | 2019-06-06 | 2020-06-02 | Film forming equipment |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7469303B2 (en) |
CN (1) | CN113924384B (en) |
TW (1) | TWI758740B (en) |
WO (1) | WO2020246449A1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4423087B2 (en) | 2004-03-31 | 2010-03-03 | 株式会社シンクロン | Sputtering apparatus and thin film forming method |
KR20130055521A (en) * | 2011-11-18 | 2013-05-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element |
JP6533511B2 (en) * | 2015-06-17 | 2019-06-19 | 株式会社シンクロン | Film forming method and film forming apparatus |
JP6800009B2 (en) | 2015-12-28 | 2020-12-16 | 芝浦メカトロニクス株式会社 | Plasma processing equipment |
JP6859162B2 (en) * | 2017-03-31 | 2021-04-14 | 芝浦メカトロニクス株式会社 | Plasma processing equipment |
JP7039234B2 (en) * | 2017-09-29 | 2022-03-22 | 芝浦メカトロニクス株式会社 | Film forming equipment |
-
2020
- 2020-06-02 WO PCT/JP2020/021712 patent/WO2020246449A1/en active Application Filing
- 2020-06-02 CN CN202080040665.9A patent/CN113924384B/en active Active
- 2020-06-02 JP JP2021524846A patent/JP7469303B2/en active Active
- 2020-06-03 TW TW109118577A patent/TWI758740B/en active
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