JPWO2020245692A1 - - Google Patents
Info
- Publication number
- JPWO2020245692A1 JPWO2020245692A1 JP2021524488A JP2021524488A JPWO2020245692A1 JP WO2020245692 A1 JPWO2020245692 A1 JP WO2020245692A1 JP 2021524488 A JP2021524488 A JP 2021524488A JP 2021524488 A JP2021524488 A JP 2021524488A JP WO2020245692 A1 JPWO2020245692 A1 JP WO2020245692A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024202280A JP2025019138A (ja) | 2019-06-07 | 2024-11-20 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019106637 | 2019-06-07 | ||
| JP2019106637 | 2019-06-07 | ||
| PCT/IB2020/054865 WO2020245692A1 (ja) | 2019-06-07 | 2020-05-22 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024202280A Division JP2025019138A (ja) | 2019-06-07 | 2024-11-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020245692A1 true JPWO2020245692A1 (https=) | 2020-12-10 |
| JPWO2020245692A5 JPWO2020245692A5 (https=) | 2023-05-29 |
| JP7592588B2 JP7592588B2 (ja) | 2024-12-02 |
Family
ID=73652404
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524488A Active JP7592588B2 (ja) | 2019-06-07 | 2020-05-22 | 半導体装置 |
| JP2024202280A Withdrawn JP2025019138A (ja) | 2019-06-07 | 2024-11-20 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024202280A Withdrawn JP2025019138A (ja) | 2019-06-07 | 2024-11-20 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12283600B2 (https=) |
| JP (2) | JP7592588B2 (https=) |
| WO (1) | WO2020245692A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11901822B2 (en) | 2019-05-31 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256489A (ja) * | 1997-03-14 | 1998-09-25 | Mitsubishi Electric Corp | 半導体装置 |
| JP2006303377A (ja) * | 2005-04-25 | 2006-11-02 | Renesas Technology Corp | 半導体装置 |
| JP2008283633A (ja) * | 2007-05-14 | 2008-11-20 | Toshiba Microelectronics Corp | キャパシタンス回路 |
| JP2009231831A (ja) * | 2008-03-21 | 2009-10-08 | Hynix Semiconductor Inc | 蓄積キャパシタ及びそれを備える半導体メモリ装置 |
| JP2012049237A (ja) * | 2010-08-25 | 2012-03-08 | Elpida Memory Inc | 半導体装置 |
| JP2012083738A (ja) * | 2010-09-15 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2012252769A (ja) * | 2011-05-06 | 2012-12-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2015153382A (ja) * | 2014-02-19 | 2015-08-24 | 株式会社メガチップス | 電流補償回路 |
| JP2015179838A (ja) * | 2014-02-28 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2017055338A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3161668B2 (ja) * | 1994-06-02 | 2001-04-25 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置 |
| US6833590B2 (en) * | 2001-01-11 | 2004-12-21 | Renesas Technology Corp. | Semiconductor device |
| WO2005106961A1 (en) * | 2004-04-28 | 2005-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Mos capacitor and semiconductor device |
| JP6031086B2 (ja) | 2012-03-08 | 2016-11-24 | 株式会社ソシオネクスト | 半導体集積回路装置 |
| JP2014074908A (ja) * | 2012-09-13 | 2014-04-24 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の駆動方法 |
| US9379214B2 (en) * | 2014-02-14 | 2016-06-28 | Semi Solutions Llc | Reduced variation MOSFET using a drain-extension-last process |
| JP6870926B2 (ja) * | 2016-06-22 | 2021-05-12 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、および電子機器 |
| US11901822B2 (en) | 2019-05-31 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2020
- 2020-05-22 WO PCT/IB2020/054865 patent/WO2020245692A1/ja not_active Ceased
- 2020-05-22 JP JP2021524488A patent/JP7592588B2/ja active Active
- 2020-05-22 US US17/615,780 patent/US12283600B2/en active Active
-
2024
- 2024-11-20 JP JP2024202280A patent/JP2025019138A/ja not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10256489A (ja) * | 1997-03-14 | 1998-09-25 | Mitsubishi Electric Corp | 半導体装置 |
| JP2006303377A (ja) * | 2005-04-25 | 2006-11-02 | Renesas Technology Corp | 半導体装置 |
| JP2008283633A (ja) * | 2007-05-14 | 2008-11-20 | Toshiba Microelectronics Corp | キャパシタンス回路 |
| JP2009231831A (ja) * | 2008-03-21 | 2009-10-08 | Hynix Semiconductor Inc | 蓄積キャパシタ及びそれを備える半導体メモリ装置 |
| JP2012049237A (ja) * | 2010-08-25 | 2012-03-08 | Elpida Memory Inc | 半導体装置 |
| JP2012083738A (ja) * | 2010-09-15 | 2012-04-26 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2012252769A (ja) * | 2011-05-06 | 2012-12-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2015153382A (ja) * | 2014-02-19 | 2015-08-24 | 株式会社メガチップス | 電流補償回路 |
| JP2015179838A (ja) * | 2014-02-28 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2017055338A (ja) * | 2015-09-11 | 2017-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12283600B2 (en) | 2025-04-22 |
| JP2025019138A (ja) | 2025-02-06 |
| US20220238560A1 (en) | 2022-07-28 |
| JP7592588B2 (ja) | 2024-12-02 |
| WO2020245692A1 (ja) | 2020-12-10 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230519 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230519 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240702 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240827 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20241022 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20241120 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7592588 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |