JPWO2020241743A1 - - Google Patents

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Publication number
JPWO2020241743A1
JPWO2020241743A1 JP2021522852A JP2021522852A JPWO2020241743A1 JP WO2020241743 A1 JPWO2020241743 A1 JP WO2020241743A1 JP 2021522852 A JP2021522852 A JP 2021522852A JP 2021522852 A JP2021522852 A JP 2021522852A JP WO2020241743 A1 JPWO2020241743 A1 JP WO2020241743A1
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JP
Japan
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Application number
JP2021522852A
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JP7168079B2 (ja
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Publication date
Application filed filed Critical
Publication of JPWO2020241743A1 publication Critical patent/JPWO2020241743A1/ja
Application granted granted Critical
Publication of JP7168079B2 publication Critical patent/JP7168079B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP2021522852A 2019-05-31 2020-05-28 圧電体膜および圧電素子 Active JP7168079B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2019102452 2019-05-31
JP2019102536 2019-05-31
JP2019102536 2019-05-31
JP2019102452 2019-05-31
JP2020059572 2020-03-30
JP2020059572 2020-03-30
PCT/JP2020/021091 WO2020241743A1 (ja) 2019-05-31 2020-05-28 圧電体膜の製造方法、圧電体膜および圧電素子

Publications (2)

Publication Number Publication Date
JPWO2020241743A1 true JPWO2020241743A1 (ja) 2020-12-03
JP7168079B2 JP7168079B2 (ja) 2022-11-09

Family

ID=73552580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021522852A Active JP7168079B2 (ja) 2019-05-31 2020-05-28 圧電体膜および圧電素子

Country Status (6)

Country Link
US (1) US20220158073A1 (ja)
EP (1) EP3978145A4 (ja)
JP (1) JP7168079B2 (ja)
CN (1) CN113711372A (ja)
TW (1) TW202112670A (ja)
WO (1) WO2020241743A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0764992A1 (en) * 1995-09-19 1997-03-26 Seiko Epson Corporation Thin piezoelectric film element, process for the preparation thereof and ink jet recording head using thin piezoelectric film element
JP2001048645A (ja) * 1999-08-06 2001-02-20 Sharp Corp 強誘電体薄膜及びその製造方法
JP2014154741A (ja) * 2013-02-12 2014-08-25 Ricoh Co Ltd 電気機械変換膜の製造方法、電気機械変換素子、液体吐出ヘッドおよびインクジェット記録装置
JP2015065430A (ja) * 2013-08-27 2015-04-09 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP2015164182A (ja) * 2014-01-29 2015-09-10 キヤノン株式会社 圧電素子、圧電素子の製造方法、および電子機器
JP6498821B1 (ja) * 2018-06-13 2019-04-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133604A (ja) * 2001-10-26 2003-05-09 Seiko Epson Corp 圧電体薄膜素子およびその製造方法、ならびにこれを用いたインクジェット記録ヘッド及びインクジェットプリンタ
JP4918673B2 (ja) * 2002-12-19 2012-04-18 独立行政法人産業技術総合研究所 圧電変換シート
JP4521751B2 (ja) * 2003-03-26 2010-08-11 国立大学法人東京工業大学 チタン酸ジルコニウム酸鉛系膜、誘電体素子、誘電体膜の製造方法
JP4303209B2 (ja) * 2005-02-04 2009-07-29 富士通株式会社 強誘電体素子及び強誘電体素子の製造方法
CN103198923A (zh) * 2012-01-05 2013-07-10 三菱综合材料株式会社 薄膜电容器的制造方法及通过该方法得到的薄膜电容器
KR102384736B1 (ko) * 2014-03-27 2022-04-07 미쓰비시 마테리알 가부시키가이샤 Mn 도프의 PZT 계 압전체막 형성용 조성물 및 Mn 도프의 PZT 계 압전체막
JP2016134404A (ja) 2015-01-15 2016-07-25 セイコーエプソン株式会社 振動発電素子及びそれを用いた振動発電デバイス
EP3343654B1 (en) * 2015-08-28 2020-04-15 Japan Advanced Institute of Science and Technology Method for forming pzt ferroelectric film
JP6690253B2 (ja) * 2016-01-22 2020-04-28 株式会社リコー Ｐｚｔ前駆体溶液及びその製造方法、ｐｚｔ膜の製造方法、電気機械変換素子の製造方法、液体吐出ヘッドの製造方法
JP6787192B2 (ja) 2017-03-08 2020-11-18 三菱マテリアル株式会社 圧電体膜
JP6958300B2 (ja) 2017-11-29 2021-11-02 Tdk株式会社 多層回路基板
US10923244B2 (en) 2017-11-30 2021-02-16 Elbit Systems Of America, Llc Phosphor screen for MEMS image intensifiers
JP7212492B2 (ja) 2018-10-09 2023-01-25 サトーホールディングス株式会社 入出庫作業支援プログラム、入出庫作業支援方法、及び入出庫作業支援システム

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0764992A1 (en) * 1995-09-19 1997-03-26 Seiko Epson Corporation Thin piezoelectric film element, process for the preparation thereof and ink jet recording head using thin piezoelectric film element
JPH1081016A (ja) * 1995-09-19 1998-03-31 Seiko Epson Corp 圧電体薄膜素子、その製造方法、及び圧電体薄膜素子を用いたインクジェット式記録ヘッド
US6097133A (en) * 1995-09-19 2000-08-01 Seiko Epson Corporation Thin piezoelectric film element, process for the preparation thereof and ink jet recording head using thin piezoelectric film element
JP2001048645A (ja) * 1999-08-06 2001-02-20 Sharp Corp 強誘電体薄膜及びその製造方法
JP2014154741A (ja) * 2013-02-12 2014-08-25 Ricoh Co Ltd 電気機械変換膜の製造方法、電気機械変換素子、液体吐出ヘッドおよびインクジェット記録装置
JP2015065430A (ja) * 2013-08-27 2015-04-09 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP2015164182A (ja) * 2014-01-29 2015-09-10 キヤノン株式会社 圧電素子、圧電素子の製造方法、および電子機器
JP6498821B1 (ja) * 2018-06-13 2019-04-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法

Also Published As

Publication number Publication date
JP7168079B2 (ja) 2022-11-09
EP3978145A4 (en) 2023-09-06
US20220158073A1 (en) 2022-05-19
CN113711372A (zh) 2021-11-26
TW202112670A (zh) 2021-04-01
WO2020241743A1 (ja) 2020-12-03
EP3978145A1 (en) 2022-04-06

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