JPWO2020226141A1 - - Google Patents

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Publication number
JPWO2020226141A1
JPWO2020226141A1 JP2021518387A JP2021518387A JPWO2020226141A1 JP WO2020226141 A1 JPWO2020226141 A1 JP WO2020226141A1 JP 2021518387 A JP2021518387 A JP 2021518387A JP 2021518387 A JP2021518387 A JP 2021518387A JP WO2020226141 A1 JPWO2020226141 A1 JP WO2020226141A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021518387A
Other languages
Japanese (ja)
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JP7306451B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2020226141A1 publication Critical patent/JPWO2020226141A1/ja
Priority to JP2023099736A priority Critical patent/JP7622779B2/ja
Application granted granted Critical
Publication of JP7306451B2 publication Critical patent/JP7306451B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2021518387A 2019-05-08 2020-05-01 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物 Active JP7306451B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023099736A JP7622779B2 (ja) 2019-05-08 2023-06-19 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019088345 2019-05-08
JP2019088345 2019-05-08
PCT/JP2020/018436 WO2020226141A1 (ja) 2019-05-08 2020-05-01 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023099736A Division JP7622779B2 (ja) 2019-05-08 2023-06-19 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
JPWO2020226141A1 true JPWO2020226141A1 (https=) 2020-11-12
JP7306451B2 JP7306451B2 (ja) 2023-07-11

Family

ID=73050771

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021518387A Active JP7306451B2 (ja) 2019-05-08 2020-05-01 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物
JP2023099736A Active JP7622779B2 (ja) 2019-05-08 2023-06-19 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023099736A Active JP7622779B2 (ja) 2019-05-08 2023-06-19 脂環式化合物末端の重合体を含むレジスト下層膜形成組成物

Country Status (6)

Country Link
US (1) US12510823B2 (https=)
JP (2) JP7306451B2 (https=)
KR (1) KR102796661B1 (https=)
CN (1) CN113795532B (https=)
TW (2) TWI844674B (https=)
WO (1) WO2020226141A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7268684B2 (ja) * 2018-10-05 2023-05-08 日産化学株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
KR102777091B1 (ko) * 2021-01-27 2025-03-07 닛산 가가쿠 가부시키가이샤 다중결합을 갖는 막형성 조성물
WO2022244682A1 (ja) * 2021-05-19 2022-11-24 Jsr株式会社 半導体基板の製造方法及びレジスト下層膜形成用組成物
CN120584325A (zh) 2023-02-09 2025-09-02 日产化学株式会社 抗蚀剂下层膜形成用组合物
WO2025197551A1 (ja) * 2024-03-18 2025-09-25 Jsr株式会社 半導体基板の製造方法、レジスト下層膜形成用組成物及び窒素含有化合物の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104685A1 (ja) * 2008-02-21 2009-08-27 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2013168610A1 (ja) * 2012-05-07 2013-11-14 日産化学工業株式会社 レジスト下層膜形成組成物
JP2016192448A (ja) * 2015-03-30 2016-11-10 Jsr株式会社 パターン形成用組成物、パターン形成方法及びブロック共重合体
WO2017086213A1 (ja) * 2015-11-17 2017-05-26 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及び該添加剤を含むレジスト下層膜形成組成物
JP2017116803A (ja) * 2015-12-25 2017-06-29 日産化学工業株式会社 レジスト下層膜形成用組成物及びレジストパターンの形成方法

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JP4317870B2 (ja) * 2003-03-11 2009-08-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規な感光性樹脂組成物
JP4105036B2 (ja) 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP5337983B2 (ja) * 2007-09-19 2013-11-06 日産化学工業株式会社 多環式脂肪族環を有するポリマーを含むリソグラフィー用レジスト下層膜形成組成物
US8822138B2 (en) * 2009-08-19 2014-09-02 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film for lithography including resin containing alicyclic ring and aromatic ring
US8507192B2 (en) 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
WO2013141015A1 (ja) 2012-03-23 2013-09-26 日産化学工業株式会社 Ｅｕｖリソグラフィー用レジスト下層膜形成組成物
KR101489922B1 (ko) 2012-06-15 2015-02-06 주식회사 성원정보기술 자동차부품용 고무제품을 위한 약품 배합 평량 측정 자동화 장치
CN107108549A (zh) * 2014-12-25 2017-08-29 三菱瓦斯化学株式会社 化合物、树脂、光刻用基底膜形成材料、光刻用基底膜、图案形成方法和纯化方法
JP7020912B2 (ja) * 2015-08-31 2022-02-16 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、並びにレジストパターン形成方法
JP6853716B2 (ja) * 2017-03-31 2021-03-31 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104685A1 (ja) * 2008-02-21 2009-08-27 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2013168610A1 (ja) * 2012-05-07 2013-11-14 日産化学工業株式会社 レジスト下層膜形成組成物
JP2016192448A (ja) * 2015-03-30 2016-11-10 Jsr株式会社 パターン形成用組成物、パターン形成方法及びブロック共重合体
WO2017086213A1 (ja) * 2015-11-17 2017-05-26 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及び該添加剤を含むレジスト下層膜形成組成物
JP2017116803A (ja) * 2015-12-25 2017-06-29 日産化学工業株式会社 レジスト下層膜形成用組成物及びレジストパターンの形成方法

Also Published As

Publication number Publication date
TW202433187A (zh) 2024-08-16
US12510823B2 (en) 2025-12-30
US20220187707A1 (en) 2022-06-16
JP7622779B2 (ja) 2025-01-28
TWI876990B (zh) 2025-03-11
WO2020226141A1 (ja) 2020-11-12
JP7306451B2 (ja) 2023-07-11
CN113795532A (zh) 2021-12-14
KR20220007588A (ko) 2022-01-18
CN113795532B (zh) 2025-02-28
TW202107206A (zh) 2021-02-16
TWI844674B (zh) 2024-06-11
JP2023126803A (ja) 2023-09-12
KR102796661B1 (ko) 2025-04-16

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