JPWO2020218482A1 - - Google Patents
Info
- Publication number
- JPWO2020218482A1 JPWO2020218482A1 JP2021516243A JP2021516243A JPWO2020218482A1 JP WO2020218482 A1 JPWO2020218482 A1 JP WO2020218482A1 JP 2021516243 A JP2021516243 A JP 2021516243A JP 2021516243 A JP2021516243 A JP 2021516243A JP WO2020218482 A1 JPWO2020218482 A1 JP WO2020218482A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019086713 | 2019-04-26 | ||
PCT/JP2020/017642 WO2020218482A1 (ja) | 2019-04-26 | 2020-04-24 | SiC基板の製造方法、その製造装置、及び、エピタキシャル成長方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2020218482A1 true JPWO2020218482A1 (ja) | 2020-10-29 |
Family
ID=72942203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021516243A Pending JPWO2020218482A1 (ja) | 2019-04-26 | 2020-04-24 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11952678B2 (ja) |
EP (1) | EP3960912A4 (ja) |
JP (1) | JPWO2020218482A1 (ja) |
CN (1) | CN114174563A (ja) |
TW (1) | TW202044353A (ja) |
WO (1) | WO2020218482A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023058492A1 (ja) * | 2021-10-05 | 2023-04-13 | 学校法人関西学院 | ドーパントの活性化率を向上させる方法及びそれらの方法により作製された構造 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000053493A (ja) * | 1998-07-31 | 2000-02-22 | Denso Corp | 単結晶の製造方法および単結晶製造装置 |
WO2002099169A1 (fr) * | 2001-06-04 | 2002-12-12 | The New Industry Research Organization | Carbure de silicium monocristal et son procede de production |
JP2007112661A (ja) * | 2005-10-20 | 2007-05-10 | Bridgestone Corp | 炭化ケイ素単結晶の製造方法及び製造装置 |
JP2011243618A (ja) * | 2010-05-14 | 2011-12-01 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
WO2014020694A1 (ja) * | 2012-07-31 | 2014-02-06 | 株式会社エコトロン | 単結晶炭化珪素基板およびその作製方法 |
JP6721208B2 (ja) | 2016-04-08 | 2020-07-08 | 株式会社ユメックス | ショートアーク放電ランプ用電極 |
EP3892761A1 (en) * | 2016-04-28 | 2021-10-13 | Kwansei Gakuin Educational Foundation | Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer |
JP2018158858A (ja) * | 2017-03-22 | 2018-10-11 | 日本電信電話株式会社 | 結晶成長方法および装置 |
-
2020
- 2020-04-24 CN CN202080030813.9A patent/CN114174563A/zh active Pending
- 2020-04-24 US US17/606,738 patent/US11952678B2/en active Active
- 2020-04-24 JP JP2021516243A patent/JPWO2020218482A1/ja active Pending
- 2020-04-24 TW TW109113844A patent/TW202044353A/zh unknown
- 2020-04-24 EP EP20793980.2A patent/EP3960912A4/en active Pending
- 2020-04-24 WO PCT/JP2020/017642 patent/WO2020218482A1/ja unknown
Also Published As
Publication number | Publication date |
---|---|
EP3960912A1 (en) | 2022-03-02 |
CN114174563A (zh) | 2022-03-11 |
US20220213615A1 (en) | 2022-07-07 |
WO2020218482A1 (ja) | 2020-10-29 |
TW202044353A (zh) | 2020-12-01 |
EP3960912A4 (en) | 2023-05-03 |
US11952678B2 (en) | 2024-04-09 |
Similar Documents
Legal Events
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