JPWO2020179793A1 - - Google Patents

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Publication number
JPWO2020179793A1
JPWO2020179793A1 JP2021504115A JP2021504115A JPWO2020179793A1 JP WO2020179793 A1 JPWO2020179793 A1 JP WO2020179793A1 JP 2021504115 A JP2021504115 A JP 2021504115A JP 2021504115 A JP2021504115 A JP 2021504115A JP WO2020179793 A1 JPWO2020179793 A1 JP WO2020179793A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021504115A
Other versions
JP7464807B2 (ja
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Publication of JPWO2020179793A1 publication Critical patent/JPWO2020179793A1/ja
Application granted granted Critical
Publication of JP7464807B2 publication Critical patent/JP7464807B2/ja
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Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2021504115A 2019-03-05 2020-03-03 ＳｉＣ基板の製造方法及びその製造装置及びＳｉＣ基板のマクロステップバンチングを低減する方法 Active JP7464807B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019040070 2019-03-05
JP2019040070 2019-03-05
PCT/JP2020/008964 WO2020179793A1 (ja) 2019-03-05 2020-03-03 ＳｉＣ基板の製造方法及びその製造装置及びＳｉＣ基板のマクロステップバンチングを低減する方法

Publications (2)

Publication Number Publication Date
JPWO2020179793A1 true JPWO2020179793A1 (ja) 2020-09-10
JP7464807B2 JP7464807B2 (ja) 2024-04-10

Family

ID=72337457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021504115A Active JP7464807B2 (ja) 2019-03-05 2020-03-03 ＳｉＣ基板の製造方法及びその製造装置及びＳｉＣ基板のマクロステップバンチングを低減する方法

Country Status (6)

Country Link
US (1) US20220181149A1 (ja)
EP (1) EP3936645A4 (ja)
JP (1) JP7464807B2 (ja)
CN (1) CN114207195B (ja)
TW (1) TWI811529B (ja)
WO (1) WO2020179793A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11972949B2 (en) 2019-03-05 2024-04-30 Kwansei Gakuin Educational Foundation SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate
CN114777427B (zh) * 2022-05-10 2023-11-17 星恒电源股份有限公司 一种方形叠片锂离子电池电芯的干燥方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005225710A (ja) * 2004-02-12 2005-08-25 Denso Corp ＳｉＣ単結晶の製造方法およびＳｉＣ単結晶の製造装置
WO2016079983A1 (ja) * 2014-11-18 2016-05-26 東洋炭素株式会社 ＳｉＣ基板のエッチング方法及び収容容器
JP2017066019A (ja) * 2015-09-30 2017-04-06 住友電気工業株式会社 炭化珪素単結晶の製造方法
WO2017188381A1 (ja) * 2016-04-28 2017-11-02 学校法人関西学院 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989340A (en) * 1995-11-14 1999-11-23 Siemens Aktiengesellschaft Process and device for sublimation growing of silicon carbide monocrystals
JP3550967B2 (ja) * 1997-09-11 2004-08-04 富士電機ホールディングス株式会社 炭化けい素基板の熱処理方法
JP5152887B2 (ja) 2006-07-07 2013-02-27 学校法人関西学院 単結晶炭化ケイ素基板の表面改質方法、単結晶炭化ケイ素薄膜の形成方法、イオン注入アニール方法及び単結晶炭化ケイ素基板、単結晶炭化ケイ素半導体基板
JP2011243618A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
JP6080075B2 (ja) * 2013-06-13 2017-02-15 学校法人関西学院 ＳｉＣ基板の表面処理方法
WO2016079984A1 (ja) * 2014-11-18 2016-05-26 学校法人関西学院 ＳｉＣ基板の表面処理方法
WO2017188382A1 (ja) * 2016-04-27 2017-11-02 学校法人関西学院 グラフェン前駆体付きＳｉＣ基板の製造方法及びＳｉＣ基板の表面処理方法
TW202037773A (zh) * 2018-11-05 2020-10-16 學校法人關西學院 碳化矽半導體基板、碳化矽半導體基板的製造方法、碳化矽半導體基板的製造裝置以及降低碳化矽半導體基板之底面差排的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005225710A (ja) * 2004-02-12 2005-08-25 Denso Corp ＳｉＣ単結晶の製造方法およびＳｉＣ単結晶の製造装置
WO2016079983A1 (ja) * 2014-11-18 2016-05-26 東洋炭素株式会社 ＳｉＣ基板のエッチング方法及び収容容器
JP2017066019A (ja) * 2015-09-30 2017-04-06 住友電気工業株式会社 炭化珪素単結晶の製造方法
WO2017188381A1 (ja) * 2016-04-28 2017-11-02 学校法人関西学院 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法

Also Published As

Publication number Publication date
EP3936645A1 (en) 2022-01-12
TWI811529B (zh) 2023-08-11
TW202044487A (zh) 2020-12-01
CN114207195A (zh) 2022-03-18
WO2020179793A1 (ja) 2020-09-10
EP3936645A4 (en) 2022-11-09
CN114207195B (zh) 2024-09-13
US20220181149A1 (en) 2022-06-09
JP7464807B2 (ja) 2024-04-10

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