JPWO2020167331A5 - - Google Patents

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JPWO2020167331A5
JPWO2020167331A5 JP2021547481A JP2021547481A JPWO2020167331A5 JP WO2020167331 A5 JPWO2020167331 A5 JP WO2020167331A5 JP 2021547481 A JP2021547481 A JP 2021547481A JP 2021547481 A JP2021547481 A JP 2021547481A JP WO2020167331 A5 JPWO2020167331 A5 JP WO2020167331A5
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Japan
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misalignment
semiconductor device
target
measuring
tool
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JP2021547481A
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Japanese (ja)
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JP2022521490A (ja
JP2022521490A5 (https=
JP7317131B2 (ja
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Priority claimed from PCT/US2019/035282 external-priority patent/WO2020167331A1/en
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Publication of JPWO2020167331A5 publication Critical patent/JPWO2020167331A5/ja
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JP2021547481A 2019-02-15 2019-06-04 結合された光および電子ビーム技術を使用する位置ずれ測定 Active JP7317131B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962806226P 2019-02-15 2019-02-15
US62/806,226 2019-02-15
PCT/US2019/035282 WO2020167331A1 (en) 2019-02-15 2019-06-04 Misregistration measurements using combined optical and electron beam technology

Publications (4)

Publication Number Publication Date
JP2022521490A JP2022521490A (ja) 2022-04-08
JP2022521490A5 JP2022521490A5 (https=) 2022-06-08
JPWO2020167331A5 true JPWO2020167331A5 (https=) 2022-06-08
JP7317131B2 JP7317131B2 (ja) 2023-07-28

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JP2021547481A Active JP7317131B2 (ja) 2019-02-15 2019-06-04 結合された光および電子ビーム技術を使用する位置ずれ測定

Country Status (5)

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JP (1) JP7317131B2 (https=)
KR (1) KR102748454B1 (https=)
CN (1) CN113366619B (https=)
TW (1) TWI804708B (https=)
WO (1) WO2020167331A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020263461A1 (en) 2019-06-25 2020-12-30 Kla Corporation Selection of regions of interest for measurement of misregistration and amelioration thereof
CN115428139B (zh) 2020-04-15 2024-04-12 科磊股份有限公司 可用于测量半导体装置偏移的具有装置级特征的偏移目标
KR102908887B1 (ko) 2020-06-25 2026-01-06 케이엘에이 코포레이션 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법
US12131959B2 (en) 2021-04-22 2024-10-29 Kla Corporation Systems and methods for improved metrology for semiconductor device wafers
US12094100B2 (en) * 2022-03-03 2024-09-17 Kla Corporation Measurement of stitching error using split targets

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997034319A1 (en) * 1996-03-06 1997-09-18 Hitachi, Ltd. Manufacture of semiconductor device
JP5180419B2 (ja) * 2000-08-30 2013-04-10 ケーエルエー−テンカー・コーポレーション 重ね合わせマーク、重ね合わせマークの設計方法および重ね合わせ測定の方法
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US7009704B1 (en) * 2000-10-26 2006-03-07 Kla-Tencor Technologies Corporation Overlay error detection
US6678038B2 (en) * 2001-08-03 2004-01-13 Nikon Corporation Apparatus and methods for detecting tool-induced shift in microlithography apparatus
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
WO2004107415A1 (ja) * 2003-05-28 2004-12-09 Nikon Corporation 位置情報計測方法及び装置、並びに露光方法及び装置
US7561282B1 (en) * 2006-03-27 2009-07-14 Kla-Tencor Technologies Corporation Techniques for determining overlay and critical dimension using a single metrology tool
US7550361B2 (en) * 2007-01-02 2009-06-23 International Business Machines Corporation Trench structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels
US8243273B2 (en) * 2008-06-04 2012-08-14 Kla-Tencor Corporation Enhanced OVL dummy field enabling “on-the-fly” OVL measurement methods
CN102203589B (zh) * 2008-11-10 2013-06-19 株式会社尼康 评估装置及评估方法
JP2011155119A (ja) * 2010-01-27 2011-08-11 Hitachi High-Technologies Corp 検査装置及び検査方法
US9007585B2 (en) * 2012-03-07 2015-04-14 Kla-Tencor Corporation Imaging overlay metrology target and complimentary overlay metrology measurement system
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
US9576861B2 (en) * 2012-11-20 2017-02-21 Kla-Tencor Corporation Method and system for universal target based inspection and metrology
US9214317B2 (en) * 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology
WO2016182948A1 (en) * 2015-05-08 2016-11-17 Kla-Tencor Corporation Method and system for aberration correction in electron beam system
NL2016937A (en) * 2015-06-17 2016-12-22 Asml Netherlands Bv Recipe selection based on inter-recipe consistency
US9916965B2 (en) * 2015-12-31 2018-03-13 Kla-Tencor Corp. Hybrid inspectors
US10409171B2 (en) * 2017-01-25 2019-09-10 Kla-Tencor Corporation Overlay control with non-zero offset prediction
CN115220311A (zh) * 2017-05-05 2022-10-21 Asml荷兰有限公司 用于预测器件制造工艺的良率的方法

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