JPWO2020089728A1 - 表示装置、表示モジュール、及び電子機器 - Google Patents
表示装置、表示モジュール、及び電子機器 Download PDFInfo
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- JPWO2020089728A1 JPWO2020089728A1 JP2020554604A JP2020554604A JPWO2020089728A1 JP WO2020089728 A1 JPWO2020089728 A1 JP WO2020089728A1 JP 2020554604 A JP2020554604 A JP 2020554604A JP 2020554604 A JP2020554604 A JP 2020554604A JP WO2020089728 A1 JPWO2020089728 A1 JP WO2020089728A1
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- transistor
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- liquid crystal
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Abstract
Description
図2は画素の一例を示す回路図である。
図3Aは表示モジュールの一例を示す上面図である。図3Bは表示モジュールの一例を示す断面図である。
図4は画素の一例を示す上面図である。
図5A、図5B、図5C、図5Dは表示モジュールの一例を示す断面図である。
図6は表示モジュールの一例を示す断面図である。
図7は画素の一例を示す上面図である。
図8は表示モジュールの一例を示す断面図である。
図9は表示モジュールの一例を示す断面図である。
図10は表示モジュールの一例を示す断面図である。
図11は表示モジュールの一例を示す断面図である。
図12A、図12B、図12C、図12Dは電子機器の一例を示す図である。
図13A、図13B、図13C、図13Dは電子機器の一例を示す図である。
図14A、図14B、図14Cは電子機器の一例を示す図である。
本実施の形態では、本発明の一態様の表示装置及び表示モジュールについて、図1〜図11を用いて説明する。
図1Aに、表示装置10の断面図を示す。図1Aに示す表示装置10は、基板131、トランジスタSW11、トランジスタSW12、絶縁層215、導電層115a、導電層115b、絶縁層121、画素電極111a、液晶材料を含む層112、共通電極113、及び基板132を有する。
表示装置10は、m行n列(m、nはそれぞれ1以上の整数)のマトリクス状に配置された複数の画素15を有する。図2に、画素15(i,j)(iは1以上m以下の整数、jは1以上n以下の整数)の回路図を示す。
図3Aに、表示モジュール50の上面図を示し、図3Bに、表示モジュール50の断面図を示す。
図4に、画素15(i,j)の上面図を示す。図4は、配線GL1(i)から画素電極111aまでの積層構造を画素電極111a側から見た上面図である。
図5Aに、表示モジュール50の断面図を示す。なお、画素の部分は、図4に示す一点鎖線G1−G2間及びG3−G4間の断面図に相当する。
本発明の一態様では、タッチセンサが搭載された表示装置または表示モジュール(以下、タッチパネルとも記す)を作製することができる。
次に、本実施の形態の表示装置及び表示モジュールの各構成要素に用いることができる材料等の詳細について、説明を行う。
以下では、半導体層に適用可能な金属酸化物について説明する。
図7に、画素16(i,j)の上面図を示す。図7は、配線GL1(i)から画素電極111aまでの積層構造を画素電極111a側から見た上面図である。
図10に示す表示モジュール55及び図11に示す表示モジュール57は、それぞれ、液晶表示装置と発光装置とを積層して有する。表示モジュール55、57は、それぞれ、発光装置が発する光33を、液晶表示装置を介して、外部に射出する構成である。また、液晶表示装置は、エッジライト型のライトから光が入射し、液晶材料を含む層で当該光を散乱させ、散乱光34を外部に射出する構成である。
本実施の形態では、本発明の一態様の電子機器について図12〜図14を用いて説明する。
Claims (16)
- 画素を有し、
前記画素は、第1のトランジスタ、第2のトランジスタ、第1の絶縁層、第2の絶縁層、第1の導電層、画素電極、液晶材料を含む層、及び共通電極を有し、
前記第1の絶縁層は、前記第1のトランジスタのチャネル形成領域上に位置し、
前記第1の導電層は、前記第1の絶縁層上に位置し、
前記第2の絶縁層は、前記第1のトランジスタ、前記第2のトランジスタ、前記第1の絶縁層、及び前記第1の導電層上に位置し、
前記画素電極は、前記第2の絶縁層上に位置し、
前記液晶材料を含む層は、前記画素電極上に位置し、
前記共通電極は、前記液晶材料を含む層上に位置し、
前記共通電極は、前記液晶材料を含む層及び前記画素電極を介して、前記第1の導電層と重なる領域を有し、
前記画素は、さらに、第1の接続部と、第2の接続部と、を有し、
前記第1の接続部では、前記第1の導電層が前記第1のトランジスタと電気的に接続され、
前記第2の接続部では、前記画素電極が前記第2のトランジスタと電気的に接続され、
前記第1の導電層、前記画素電極、及び前記共通電極は、それぞれ、可視光を透過する機能を有する、表示装置。 - 請求項1において、
前記画素は、さらに、第2の導電層を有し、
前記第1の導電層と前記第2の導電層とは、同一表面上に位置し、
前記第1の導電層と前記第2の導電層とは、互いに電気的に絶縁されており、
前記共通電極は、前記液晶材料を含む層及び前記画素電極を介して、前記第2の導電層と重なる領域を有する、表示装置。 - 請求項1または2において、
前記画素電極と前記共通電極との間に電圧を印加している状態に比べて、前記画素電極と前記共通電極との間に電圧を印加していない状態の方が、前記液晶材料を含む層における可視光の透過率が高い、表示装置。 - 請求項1乃至3のいずれか一において、
前記液晶材料を含む層は、高分子材料を有し、
前記高分子材料は、多官能モノマーと単官能モノマーとの共重合体であり、
前記多官能モノマーは、安息香酸フェニル骨格を有し、
前記単官能モノマーは、シクロヘキシルベンゼン骨格を有する、表示装置。 - 請求項1乃至4のいずれか一において、
前記第1の接続部では、前記第1のトランジスタは、可視光を透過する機能を有する、表示装置。 - 請求項1乃至5のいずれか一において、
前記第2の接続部では、前記第2のトランジスタは、可視光を透過する機能を有する、表示装置。 - 請求項1乃至6のいずれか一において、
前記画素は、さらに、第3の導電層を有し、
前記第1の導電層と前記第3の導電層とは、同一表面上に位置し、
前記第1の導電層と前記第3の導電層とは、互いに電気的に絶縁されており、
前記第2の接続部では、前記画素電極が前記第3の導電層と接する領域を有し、前記第3の導電層が前記第2のトランジスタのソースまたはドレインと接する領域を有する、表示装置。 - 請求項7において、
前記第2のトランジスタのソースまたはドレインは、可視光を透過する機能を有する、表示装置。 - 請求項1乃至8のいずれか一において、
前記第1の絶縁層は、前記第1のトランジスタ上に位置する、表示装置。 - 請求項1乃至9のいずれか一において、
前記第1の絶縁層は、平坦化機能を有する、表示装置。 - 請求項1乃至3のいずれか一において、
前記第1のトランジスタのゲート、ソース、及びドレイン、並びに、前記第2のトランジスタのゲート、ソース、及びドレインのうち少なくとも一つは、第1の層と、前記第1の層上の第2の層と、を有し、
前記第2の層は、前記第1の層よりも抵抗値が小さい、表示装置。 - 請求項1乃至3のいずれか一において、
前記第1のトランジスタのゲート、ソース、及びドレイン、並びに、前記第2のトランジスタのゲート、ソース、及びドレインのうち少なくとも一つは、第1の層と、前記第1の層上の第2の層と、前記第2の層上の第3の層と、を有し、
前記第2の層は、前記第1の層よりも抵抗値が小さく、
前記第3の層は、前記第2の層よりも可視光の反射率が低く、
前記第2の層と前記第3の層とは、同じ金属元素を少なくとも一つ含む、表示装置。 - 請求項1乃至12のいずれか一において、
フィールドシーケンシャル駆動方式により表示する機能を有する、表示装置。 - 請求項1乃至13のいずれか一に記載の表示装置と、コネクタ及び集積回路のうち少なくとも一方と、を有する、表示モジュール。
- 請求項1乃至13のいずれか一に記載の表示装置と、発光素子を有する発光装置と、を積層して有し、
前記発光装置は、画像を表示する機能を有し、
前記発光素子が発する光は、前記表示装置を介して取り出される、表示モジュール。 - 請求項14または15に記載の表示モジュールと、
アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、及び操作ボタンのうち少なくとも一つと、を有する、電子機器。
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