JPWO2020075031A5 - - Google Patents

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Publication number
JPWO2020075031A5
JPWO2020075031A5 JP2020550958A JP2020550958A JPWO2020075031A5 JP WO2020075031 A5 JPWO2020075031 A5 JP WO2020075031A5 JP 2020550958 A JP2020550958 A JP 2020550958A JP 2020550958 A JP2020550958 A JP 2020550958A JP WO2020075031 A5 JPWO2020075031 A5 JP WO2020075031A5
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JP
Japan
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transistor
pixel
electrically connected
drain
source
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JP2020550958A
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English (en)
Japanese (ja)
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JPWO2020075031A1 (ja
JP7396995B2 (ja
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Priority claimed from PCT/IB2019/058506 external-priority patent/WO2020075031A1/ja
Publication of JPWO2020075031A1 publication Critical patent/JPWO2020075031A1/ja
Publication of JPWO2020075031A5 publication Critical patent/JPWO2020075031A5/ja
Priority to JP2023203094A priority Critical patent/JP7633363B2/ja
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Publication of JP7396995B2 publication Critical patent/JP7396995B2/ja
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JP2020550958A 2018-10-11 2019-10-07 撮像装置および電子機器 Active JP7396995B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023203094A JP7633363B2 (ja) 2018-10-11 2023-11-30 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018192666 2018-10-11
JP2018192666 2018-10-11
PCT/IB2019/058506 WO2020075031A1 (ja) 2018-10-11 2019-10-07 撮像装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023203094A Division JP7633363B2 (ja) 2018-10-11 2023-11-30 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020075031A1 JPWO2020075031A1 (ja) 2021-10-14
JPWO2020075031A5 true JPWO2020075031A5 (https=) 2022-09-12
JP7396995B2 JP7396995B2 (ja) 2023-12-12

Family

ID=70164547

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020550958A Active JP7396995B2 (ja) 2018-10-11 2019-10-07 撮像装置および電子機器
JP2023203094A Active JP7633363B2 (ja) 2018-10-11 2023-11-30 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023203094A Active JP7633363B2 (ja) 2018-10-11 2023-11-30 半導体装置

Country Status (5)

Country Link
US (1) US11595594B2 (https=)
JP (2) JP7396995B2 (https=)
KR (1) KR102823435B1 (https=)
CN (1) CN112840639B (https=)
WO (1) WO2020075031A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021009638A1 (ja) 2019-07-17 2021-01-21 株式会社半導体エネルギー研究所 表示装置
CN115428437A (zh) * 2020-04-17 2022-12-02 株式会社半导体能源研究所 摄像装置及电子设备
KR20230047392A (ko) * 2020-08-03 2023-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
CN116806370A (zh) * 2022-01-25 2023-09-26 京东方科技集团股份有限公司 探测基板及射线探测器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60030959T2 (de) * 1999-01-29 2007-06-14 Hamamatsu Photonics K.K., Hamamatsu Photodetektorvorrichtung
JP2006025451A (ja) * 1999-03-30 2006-01-26 Sharp Corp 相関２重サンプリング回路およびそれを用いた増幅型固体撮像装置
JP4119052B2 (ja) * 1999-07-16 2008-07-16 浜松ホトニクス株式会社 光検出装置
JP2004014673A (ja) * 2002-06-05 2004-01-15 Nippon Hoso Kyokai <Nhk> 固体撮像装置及びそれを用いたカメラ装置
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
WO2011055637A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Touch panel and driving method of touch panel
JP5810575B2 (ja) * 2011-03-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
KR101976228B1 (ko) 2011-09-22 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 검출 장치 및 광 검출 장치의 구동 방법
KR101871235B1 (ko) * 2012-06-05 2018-06-27 삼성전자주식회사 깊이 영상 생성 방법 및 장치, 깊이 영상 처리 방법 및 장치
DE102013217278B4 (de) * 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
JP2016029795A (ja) 2014-07-18 2016-03-03 株式会社半導体エネルギー研究所 半導体装置、撮像装置及び電子機器
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US10200641B2 (en) * 2014-11-17 2019-02-05 Tohoku University Optical sensor and solid-state imaging device, and signal reading methods therefor
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9876946B2 (en) 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
JP2018136491A (ja) * 2017-02-23 2018-08-30 株式会社半導体エネルギー研究所 画像表示システムおよび電子機器
JP6956784B2 (ja) 2017-06-08 2021-11-02 株式会社半導体エネルギー研究所 撮像装置
CN120455860A (zh) 2017-06-14 2025-08-08 株式会社半导体能源研究所 摄像装置及电子设备
CN108391071B (zh) * 2017-11-23 2020-04-14 南京邮电大学 一种采用二次相关双采样技术的spad阵列级读出电路

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