JPWO2020003803A1 - 成膜方法、成膜システム、及び成膜装置 - Google Patents
成膜方法、成膜システム、及び成膜装置 Download PDFInfo
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- JPWO2020003803A1 JPWO2020003803A1 JP2020527279A JP2020527279A JPWO2020003803A1 JP WO2020003803 A1 JPWO2020003803 A1 JP WO2020003803A1 JP 2020527279 A JP2020527279 A JP 2020527279A JP 2020527279 A JP2020527279 A JP 2020527279A JP WO2020003803 A1 JPWO2020003803 A1 JP WO2020003803A1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
[システムの構成]
本実施形態では、複数の成膜装置による成膜システムにより、成膜を実施する場合を例に説明する。最初に、本実施形態に係る成膜システムについて説明する。図1は、第1実施形態に係る成膜システムの全体の概略的な構成の一例を示す図である。成膜システム100は、基板に下地膜の成膜を行い、次いで、下地膜上に金属層を成膜する。なお、以下では、金属層としてタングステン膜を成膜する場合を例に説明するが、これに限定されない。成膜システム100は、Cu(銅)、Co(コバルト)、Ru(ルテニウム)、Mo(モリブデン)のうちのいずれかを含有する金属層を成膜してもよい。
第1実施形態に係る成膜装置101と成膜装置102〜104は、ガスを供給するガス供給機構の構成以外、略同様の構成とされている。以下では、成膜装置101の構成について主に説明し、成膜装置102〜104の構成については異なる部分を主に説明する。
次に、上記のように構成された成膜システム100を用いて行われる、タングステン膜の成膜方法について説明する。図5は、第1実施形態に係る成膜方法の各工程の流れの一例を示すフローチャートである。図6は、第1実施形態に係る成膜方法の各工程でのウエハの状態を模式的に示した断面図である。
次に、成膜装置101が、下地膜を成膜する流れについて説明する。成膜装置101は、Ti含有ガスと、Al含有ガスと、反応ガスとを処理容器1器内に繰り返し供給して、下地膜を成膜する。例えば、成膜装置101は、パージ工程を挟んでTi含有ガスと反応ガスの交互供給を少なくとも1回繰返すことにより第1下地膜を形成する工程と、パージ工程を挟んでAl含有ガスと反応ガスの交互供給を少なくとも1回繰返すことにより第2下地膜を形成する工程とを、少なくとも1回以上繰り返すことにより下地膜を成膜する。本実施形態では、第1下地膜としてTiN膜と、第2下地膜としてAlN膜とを積層したAlTiN膜を下地膜として成膜する。
次に、金属層を成膜する流れを説明する。本実施形態では、成膜装置102が金属層として初期タングステン膜を成膜し、成膜装置103が金属層として主タングステン膜を成膜する。図8は、第1実施形態に係る金属層として初期タングステン膜を成膜する際のガス供給シーケンスの一例を示す図である。
次に、本実施形態に係る成膜方法の作用及び効果について説明する。図10は、第1実施形態に係るウエハの層構成の一例を示す図である。図10は、第1本実施形態に係る成膜方法により成膜されたウエハWの層構成の一例を示したものである。ウエハWは、不図示のシリコン(SiO2)層の上に、ブロックキングのためAlO層が形成されている。そして、ウエハWは、AlO層の上に、密着性や反応抑制の観点から、本実施形態に係る成膜方法により、下地膜として、厚さが例えば1nmのAlTiN膜が形成されている。AlTiN膜は、下部でTiの含有率が高く、上部でAlの含有率が高く成膜されている。そして、ウエハWは、AlTiN膜の上に、初期タングステン膜として、厚さが例えば1nmのタングステンのNucleation膜(Nuc)が形成されている。そして、ウエハWは、Nucleation膜の上に、低抵抗のタングステン膜(W)が形成されている。
温度:250〜550℃
圧力:0.1〜10Torr
Ti含有ガス:10〜500sccm
Al含有ガス:10〜500sccm
キャリアガス(N2):3000〜30000sccm
パージガス(N2):0〜20000sccm
NH3ガス:1000〜20000sccm
時間:
Ti含有ガス:0.05〜5秒
Al含有ガス:0.05〜5秒
パージ:0.05〜5秒
NH3ガス:0.05〜5秒
パージ:0.05〜5秒
温度:250〜550℃
圧力:0.1〜10Torr
W含有ガス:10〜500sccm
キャリアガス(N2):3000〜30000sccm
パージガス(N2):1000〜10000sccm
H2ガス:1000〜10000sccm
SiH4ガス、B2H6ガス:10〜1000sccm
時間:
W含有ガス:0.05〜5秒
パージ:0.05〜5秒
SiH4ガス、B2H6ガス:0.05〜5秒
パージ:0.05〜5秒
温度:250〜550℃
圧力:0.1〜10Torr
W含有ガス:100〜500sccm
キャリアガス(N2):3000〜30000sccm
パージガス(N2):1000〜10000sccm
H2ガス:1000〜10000sccm
時間:
W含有ガス:0.05〜15秒
パージ:0.05〜15秒
H2ガス:0.05〜15秒
パージ:0.05〜15秒
温度:250〜550℃
圧力:0.1〜10Torr
W含有ガス:10〜500sccm
キャリアガス(N2):3000〜30000sccm
パージガス(N2):1000〜10000sccm
H2ガス:1000〜20000sccm
SiH4ガス、B2H6ガス:10〜1000sccm
時間:
W含有ガス:0.05〜5秒
パージ:0.05〜5秒
SiH4ガス、B2H6ガス:0.05〜5秒
パージ:0.05〜5秒
温度:250〜550℃
圧力:0.1〜20Torr
W含有ガス:100〜500sccm
キャリアガス(N2):1000〜10000sccm
パージガス(N2):0〜10000sccm
H2ガス:500〜20000sccm
時間:
W含有ガス:0.05〜15秒
パージ:0.05〜15秒
H2ガス:0.05〜15秒
パージ:0.05〜15秒
次に、第2実施形態について説明する。第2実施形態に係る成膜システム100及び成膜装置101〜104は、図1から図4に示した第1実施形態に係る成膜システム100及び成膜装置101〜104の構成と同様であるため、説明を省略する。
次に、第3実施形態について説明する。第3実施形態は、成膜装置101に成膜装置102の機能を持たせたものであり、成膜装置102は、成膜装置103,104と同様な構成とすることができる。なお、第3実施形態に係る成膜システム100は、第1及び第2実施形態と同様であるため、省略する。
5 ガス供給機構
6 制御部
100 成膜システム
101〜104 成膜装置
W ウエハ
Claims (26)
- 絶縁膜が形成された基板を処理容器内に配置し、減圧雰囲気で、Ti含有ガスとAl含有ガスと反応ガスとを前記処理容器内に繰り返し供給して下地膜を形成する工程と、
前記下地膜が形成された前記基板に金属材料による金属層を形成する工程と、
を有することを特徴とする成膜方法。 - 前記下地膜を形成する工程は、
パージ工程を挟んで前記Ti含有ガスと前記反応ガスの交互供給を少なくとも1回繰返すことにより第1下地膜を形成する工程と、
パージ工程を挟んでAl含有ガスと前記反応ガスの交互供給を少なくとも1回繰返すことにより第2下地膜を形成する工程と、を少なくとも1回以上繰り返す
ことを特徴とする請求項1に記載の成膜方法。 - 前記下地膜を形成する工程は、
前記下地膜の下部を形成する場合、前記第1下地膜を形成する工程を、前記第2下地膜を形成する工程よりも多く実行し、
前記下地膜の上部を形成する場合、前記第2下地膜を形成する工程を、前記第1下地膜を形成する工程よりも多く実行する
ことを特徴とする請求項2に記載の成膜方法。 - 前記下地膜を形成する工程は、最初に、前記第1下地膜を形成する工程を実行する
ことを特徴とする請求項2または3に記載の成膜方法。 - 前記下地膜を形成する工程は、最後に、前記第2下地膜を形成する工程を実行する
ことを特徴とする請求項2〜4の何れか1つに記載の成膜方法。 - 前記下地膜を形成する工程は、
前記下地膜の下部を形成する場合、前記Ti含有ガスの供給量を前記Al含有ガスの供給量よりも多くし、前記下地膜の上部を形成する場合、前記Ti含有ガスの供給量を前記Al含有ガスの供給量よりも少なくして、パージ工程を挟んで、前記Ti含有ガスと前記Al含有ガスと前記反応ガスを順に前記処理容器内に繰り返し供給して前記下地膜を形成する
ことを特徴とする請求項1に記載の成膜方法。 - 前記Ti含有ガスは、TiCl4、TDMAT、TMEATの何れかを含み、
前記Al含有ガスは、TMA、AlCl3の何れかを含む
ことを特徴とする請求項1〜6の何れか1つに記載の成膜方法。 - 前記下地膜を形成する工程は、前記基板の温度を250〜550℃に加熱して下地膜を形成することを特徴とする請求項1〜7のいずれか1つに記載の成膜方法。
- 前記金属層を形成する工程は、金属の初期膜を形成する核形成工程と、金属の主成膜を形成するメイン工程とを有する
ことを特徴とする請求項1〜8の何れか1つに記載の成膜方法。 - 前記金属材料は、W、Cu、Co、Ru、Moのうちのいずれかを含有する
ことを特徴とする請求項1〜9の何れか1つに記載の成膜方法。 - 前記反応ガスは、N含有ガス、希ガス、不活性ガスの何れかである
ことを特徴とする請求項1〜10の何れか1つに記載の成膜方法。 - 前記反応ガスは、NH3ガス、ヒドラジンガスの何れかである
ことを特徴とする請求項1〜11の何れか1つに記載の成膜方法。 - 前記下地膜の膜厚は、3.5nm以下とする
ことを特徴とする請求項1〜12の何れか1つに記載の成膜方法。 - 前記下地膜は、TiとAlの組成比が20〜95%:5〜80%とする
ことを特徴とする請求項1〜13の何れか1つに記載の成膜方法。 - 前記下地膜は、アモルファス膜であることを特徴とする請求項1〜14の何れか1つに記載の成膜方法。
- 前記下地膜を形成する工程は、核生成ガスをさらに前記処理容器内に繰り返し供給して前記下地膜を形成する
ことを特徴とする請求項1〜5、7〜15の何れか1つに記載の成膜方法。 - 前記下地膜を形成する工程は、
パージ工程を挟んで前記Ti含有ガスと前記反応ガスの交互供給を少なくとも1回繰返すことにより第1下地膜を形成する工程と、
パージ工程を挟んでAl含有ガスと前記反応ガスの交互供給を少なくとも1回繰返すことにより第2下地膜を形成する工程と、
パージ工程を挟んで核生成ガスの供給を少なくとも1回繰返すことにより第3下地膜を形成する工程と、を少なくとも1回以上繰り返す
ことを特徴とする請求項16に記載の成膜方法。 - 前記絶縁膜は、AlO層、SiO2層またはSiN層の何れかであることを特徴とする請求項1〜17の何れか1つに記載の成膜方法。
- 前記基板は、凹部を有し、前記凹部の内部表面の少なくとも一部に前記絶縁膜が露出しており、
前記絶縁膜上に、前記下地膜および前記金属層を形成して、前記凹部を埋め込むことを特徴とする請求項1〜18の何れか1つに記載の成膜方法。 - 絶縁膜が形成された基板を処理容器内に配置し、減圧雰囲気で、Ti含有ガスとAl含有ガスと反応ガスとを前記処理容器内に繰り返し供給して下地膜を形成し、
前記下地膜が形成された前記基板に金属材料による金属層を形成する
処理を実行することを特徴とする成膜システム。 - 前記下地膜の形成と、前記金属層の形成は、別の処理容器内で行われることを特徴とする請求項20に記載の成膜システム。
- 前記下地膜の形成と、前記金属層の形成は、真空を破ることなく行われることを特徴とする請求項20または21に記載の成膜システム。
- 前記金属層を形成する工程は、初期金属膜を形成する工程と、主金属膜を形成する工程と、を有し、
前記下地膜の形成と、前記初期金属膜の形成は、同じ処理容器内で行われることを特徴とする請求項20〜22の何れか1つに記載の成膜システム。 - 前記下地膜の形成と、前記金属層の形成は、同じ処理容器内で行われることを特徴とする請求項20に記載の成膜システム。
- 絶縁膜が形成された基板を処理容器内に配置し、減圧雰囲気で、Ti含有ガスとAl含有ガスと反応ガスとを前記処理容器内に繰り返し供給して下地膜を形成し、
前記下地膜が形成された前記基板に金属材料による金属層を形成する
処理を実行することを特徴とする成膜装置。 - 絶縁膜が形成された基板を処理容器内に配置し、減圧雰囲気で、TiCl4ガスとTMAガスとNH3ガスを前記基板に供給するサイクルを繰り返して前記絶縁膜上に下地膜を形成し、
前記下地膜が形成された前記基板にWF6ガスとB2H6ガスとを交互に供給することを繰り返して初期タングステン膜を形成し、
前記初期タングステン膜が形成された前記基板にWF6ガスとH2ガスを交互に供給することを繰り返して主タングステン膜を形成する
ことを特徴とするタングステン膜の成膜方法。
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