JPWO2019241082A5 - - Google Patents
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- Publication number
- JPWO2019241082A5 JPWO2019241082A5 JP2020564399A JP2020564399A JPWO2019241082A5 JP WO2019241082 A5 JPWO2019241082 A5 JP WO2019241082A5 JP 2020564399 A JP2020564399 A JP 2020564399A JP 2020564399 A JP2020564399 A JP 2020564399A JP WO2019241082 A5 JPWO2019241082 A5 JP WO2019241082A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- microstructured
- semiconductor device
- film
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862684720P | 2018-06-13 | 2018-06-13 | |
| US62/684,720 | 2018-06-13 | ||
| PCT/US2019/036174 WO2019241082A1 (en) | 2018-06-13 | 2019-06-07 | Strain control in optoelectronic devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021527944A JP2021527944A (ja) | 2021-10-14 |
| JPWO2019241082A5 true JPWO2019241082A5 (https=) | 2022-06-10 |
| JP2021527944A5 JP2021527944A5 (https=) | 2022-06-10 |
Family
ID=68840425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020564399A Pending JP2021527944A (ja) | 2018-06-13 | 2019-06-07 | 光電子デバイスにおけるひずみ制御 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10992105B2 (https=) |
| EP (1) | EP3807925A4 (https=) |
| JP (1) | JP2021527944A (https=) |
| KR (1) | KR102874774B1 (https=) |
| WO (1) | WO2019241082A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112467514B (zh) * | 2020-11-10 | 2022-04-12 | 华中科技大学 | 一种宽工作温度范围的分布反馈半导体激光器 |
| CN115377240A (zh) * | 2022-09-19 | 2022-11-22 | 中国科学院半导体研究所 | 光电探测器、应变锗基led及其制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5787104A (en) | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
| GB2310316A (en) * | 1996-02-15 | 1997-08-20 | Sharp Kk | Semiconductor laser |
| MY131962A (en) * | 2001-01-24 | 2007-09-28 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
| DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
| JP4160000B2 (ja) * | 2004-02-13 | 2008-10-01 | ドンゴク ユニバーシティ インダストリー アカデミック コーポレイション ファウンデイション | 発光ダイオードおよびその製造方法 |
| US7875522B2 (en) * | 2007-03-30 | 2011-01-25 | The Board Of Trustees Of The Leland Stanford Junior University | Silicon compatible integrated light communicator |
| JP4978478B2 (ja) * | 2008-01-11 | 2012-07-18 | ソニー株式会社 | 電磁波抑制放熱シート及び電子機器 |
| JP4575471B2 (ja) * | 2008-03-28 | 2010-11-04 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| JP5479765B2 (ja) * | 2009-03-27 | 2014-04-23 | 古河電気工業株式会社 | 一次元アレイ素子の製造方法および一次元アレイ素子 |
| US9065253B2 (en) * | 2009-05-13 | 2015-06-23 | University Of Washington Through Its Center For Commercialization | Strain modulated nanostructures for optoelectronic devices and associated systems and methods |
| JP5121783B2 (ja) * | 2009-06-30 | 2013-01-16 | 株式会社日立ハイテクノロジーズ | Ｌｅｄ光源およびその製造方法ならびにｌｅｄ光源を用いた露光装置及び露光方法 |
| US9490318B2 (en) * | 2012-06-15 | 2016-11-08 | Lawrence Livermore National Security, Llc | Three dimensional strained semiconductors |
| CN106098697B (zh) * | 2016-06-15 | 2019-04-02 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制作方法 |
-
2019
- 2019-06-07 KR KR1020207032943A patent/KR102874774B1/ko active Active
- 2019-06-07 US US16/434,236 patent/US10992105B2/en active Active
- 2019-06-07 JP JP2020564399A patent/JP2021527944A/ja active Pending
- 2019-06-07 WO PCT/US2019/036174 patent/WO2019241082A1/en not_active Ceased
- 2019-06-07 EP EP19819919.2A patent/EP3807925A4/en active Pending
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