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  • H01S5/00—Semiconductor lasers
  • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
  • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
  • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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  • H01S5/00—Semiconductor lasers
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  • H01S5/00—Semiconductor lasers
  • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
  • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
• • H—ELECTRICITY
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  • H01S5/00—Semiconductor lasers
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  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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  • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
• • H—ELECTRICITY
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  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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  • H10H20/80—Constructional details
• • H—ELECTRICITY
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  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
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  • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
  • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
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  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/858—Means for heat extraction or cooling
  • H10H20/8581—Means for heat extraction or cooling characterised by their material
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  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/858—Means for heat extraction or cooling
  • H10H20/8582—Means for heat extraction or cooling characterised by their shape
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  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
  • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
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  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
  • H10P72/0602—Temperature monitoring
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  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
  • H10P95/90—Thermal treatments, e.g. annealing or sintering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S2301/00—Functional characteristics
  • H01S2301/17—Semiconductor lasers comprising special layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/42—Arrays of surface emitting lasers
  • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Definitions

• the present technology relates to optoelectronic devices, and more specifically, it relates to techniques for controlling the emission wavelength response to temperature of light emitting devices.
• the light emission wavelength of optoelectronic devices such as light emitting diodes (LEDs) and laser diodes (LDs) is determined by both the bandgap of the emitting material system and the energy distribution of eleetrons and holes in that material.
• the band gap is a function of the crystal lattice and is known to be a function of both temperature and strain.
• the energy distribution of electrons and holes is dependent on material parameters (effective masses), material geometry (e.g., quantum well thickness), and temperature (Fermi-Dirac statistics).
• Both temperature and strain have been exploited in tire past to introduce some tunability to the emission wavelength of diode lasers, For example, tunable laser diodes are produced by introducing temperature control of the laser diode.
• the rate that wavelength changes with temperature (dX/ dT) in a light emitting diode/ laser diode cannot be directly engineered because of its close ties to the physical properties of the light-emitting semiconductor material.
• Strain is used in all laser diodes primarily to improve efficiency, but also as a method to shift the effective bandgap energy in order to achieve the desired emission wavelength. Strain is typically introduced during epitaxial growth and arises from lattice mismatch between layers of varying
• composition This has the effect of limiting the degree of strain that can be achieved, as cracking can occur due to relaxation away from the interface.
• strain is carefully controlled to improve laser efficiency.
• the present technology facilitates control of the emission
• LEDs Light emitting diodes
• LDs laser diodes
• LEDs Light emitting diodes
• LDs laser diodes
• dA/dT wavelength- temperature coefficient
• the LBD/LD chip such that as the temperature of the device changes, a varying level of strain is introduced to the underlying LED or LD. Because strain can also adjust the effective bandgap energy (and hence emission wavelength) of the device, the external strain-inducing coating can act to either compensate for the wavelength shift due to temperature (resulting in reduced dX/'dT) or accentuate it (resulting in increased dA/dT) By proper selection of coating material and geometry, full control over dl/dT can be achieved.
• FIG. 1 shows a mismatched CTE coating between pillars of semiconductor material.
• FIG. 2 shows a mismatched CTE coating between pillars of semiconductor material and further shows a quantum well located within the semiconductor material below the pillars.
• FIG. 3 shows a mismatched CTE coating above semiconductor material and further shows a quantum well located within the semiconductor material.
• the present technology takes advantage of strained microstructure technology previously developed at Lawrence Livermore National
• microstructures and are then coated with another layer, such as a dielectric.
• This layer is designed to have a high intrinsic strain, which is then transferred to the semiconductor.
• the 3D structure of the semiconductor enables high strains to be applied in a controlled manner to large volumes of
• the present technology provides an alternative method. Instead of designing the coating for high strain, the coating layer is chosen to have a mismatched coefficient of thermal expansion with the underlying
• the strain can act to counteract or compliment the effect of temperature on the ba nd gap. This enables an additional way to control the wavelength-temperature (d, ⁇ /dT) relationship.
• LDs and LEDs with controlled dX/dT can be produced. This leads to LDs and LEDs with believed zero temperature dependence, enhanced dependence, and even negative temperature dependence.
• the technology contemplates the use of materials having a negative coefficient of thermal expansion and is not limited to 3 ⁇ dimensional structures. There are myriad potential applications for new LDs and LEDs in all of these regimes. These structures lend themselves well to common laser types such as vertical cavity surface emitting lasers (VCSELS) as well as edge emitting designs.
• VSELS vertical cavity surface emitting lasers
• the embodiments described in U.S. Patent No. 9,490,318 can be altered according to the present technology such that rather than utilizing a strain layer, a coating layer is provided that has a mismatched coefficient of thermal expansion with the underlying
• Such embodiments are exemplary but not limiting. It is possible to provide embodiments that include the present technology as well as an intrinsic strain layer.
• the external strain approach provides a way to induce more strain than is possible through simple epitaxial growth means (i.e., the quantum wells are able to accommodate greater amounts of strain from an externally applied film than is possible with built-in strain provided by material composition adjustment). This, in turn, provides an increase in the gain of the device which helps reduce threshold and improve device efficiency.
• One embodiment of the technology is a micro-structured
• the semiconductor device such as a laser diode or light emitting diode that is coated with a second film.
• Exemplary materials useable for the second film include a dielectric or a metal, but other materials are possible.
• the second film possesses a coefficient of thermal expansion (CTE) that differs from the coefficient of thermal expansion of the semiconductor material.
• CTE coefficient of thermal expansion
• the microstructural geometry and second film are chosen such that the CTE mismatch results in straining of the semiconductor during heating and cooling, such that the emission wavelength of the semiconductor possesses a different behavior vs temperature than under normal conditions, .i.e., the emission wavelength of the semiconductor possesses a different behavior vs temperature different than would be exhibited by a the micros true lured semiconductor device if the film having the second CTE were not fixedly attached to the semiconductor material.
• the entire device can be designed (semiconductor, microstructure, second film) to result in the desired dl/dT behavior.
• FIG. 1 shows a mismatched CTE coating 10 between pillars of semiconductor material 12.
• a quantum well 14 is located -within the semiconductor material of each pillar, Electrodes 16 are located on top of each pillar and an electrode 18 is located on the bottom of the semiconductor material 12,
• FIG. 2 shows a mismatched CTE coating 20 between pillars of semiconductor material 22.
• a quantum well 24 is located within the semiconductor material 22 below the pillars.
• Electrodes 26 are located on top of each pillar and an electrode 28 is located on the bottom of the
• FIG. 3 shows a mismatched CTE coating 30 above semiconductor material 32.
• a quantum well 34 is located within the semiconductor material 32.
• An electrode 36 is located on top of the a mismatched CTE coating 30 and an electrode 38 is located on the bottom of the semiconductor material 32.
• a coating having a mismatched coefficient of thermal expansion is applied to an underlying light emitting diode (LED) or laser diode (LD), such that as the temperature of the device changes, a varying level of strain is introduced to the underlying LED or LD.
• LED light emitting diode
• LD laser diode
• strain can also adjust the effective band gap energy (and hence emission wavelength) of the device, the externa] strain-inducing coating can act to either compensate for the wavelength shift due to temperature (resulting in reduced dl/dT) or accentuate it (resulting in increased dA/dT).
• An apparatus comprising:
• semiconductor material comprises a microstructured semiconductor device.
• said semiconductor material comprises a microstructured semiconductor device selected from the group consisting of a laser diode and a light emitting diode.
• said semiconductor material comprises a microstructured semiconductor device that produces an emission wavelength that depends upon temperature in a different than would be exhibited by a said microstructured semiconductor device if said film having said second CTE were not fixedly attached to said semiconductor material.
• a material selected from the group consisting of a dielectric and a metal comprises a material selected from the group consisting of a dielectric and a metal.
• said semiconductor material comprises a microstmctured semiconductor device, wherein said microstructured semiconductor device comprises a
• microstructural geometry wherein said microstructural geometry and said film are chosen such that said CTE mismatch results in straining of said semiconductor device during heating and cooling, such that the emission wavelength of the semiconductor possesses a different behavior vs temperature than would be exhibited if said second film CTE were not fixedly attached to said semiconductor material,
• semiconductor material comprises a 3-dimensional semiconductor device
• said semiconductor material comprises a semiconductor device selected from the group consisting of a laser diode and a light emitting diode.
• a method comprising:
• said film comprises a second CTE, wherein second CTE differs from said first CTE to produce a CTE mismatch that results in straining of said semiconductor material during heating and cooling of at least one of said semiconductor material and said film.
• semiconductor material comprises a microstructured semiconductor device.
• said semiconductor material comprises a microstructured semiconductor device selected from the group consisting of a laser diode and a light emitting diode.
• said semiconductor material comprises a microstructured semiconductor device that produces an emission wavelength that depends upon temperature in a different than would be exhibited by a said microstructured semiconductor device if said film having said second CTE were not fixedly attached to said semiconductor material.
• said semiconductor material comprises a microstructured semiconductor device designed to result in a desired d ⁇ /dT behavior.
• said semiconductor material comprises a micros true Oared semiconductor device
• said microstructured semiconductor device comprises a
• microstructural geometry wherein said microstructural geometry and said film are chosen such that said CTE mismatch results in straining of said semiconductor device during heating and cooling, such that the emission wavelength of the semiconductor possesses a different behavior vs temperature than would be exhibited if said second film CTE were not fixedly attached to said semiconductor material
• semiconductor material comprises a 3-dimensional semiconductor device
• said semiconductor material comprises a semiconductor device selected from the group consisting of a laser diode and a light emitting diode,
• An apparatus comprising:
• each three-dimensional structure comprises a bottom surface, a top surface and at least one side surface connecting the bottom surface and the top surface;
• a method comprising:
• each three-dimensional structure comprises a bottom surface, a top surface and at least one side surface connecting the bottom surface and the top surface;

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• Physics & Mathematics (AREA)
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• Electromagnetism (AREA)
• Optics & Photonics (AREA)
• Semiconductor Lasers (AREA)
• Led Devices (AREA)
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• 2019
  • 2019-06-07 KR KR1020207032943A patent/KR102874774B1/ko active Active
  • 2019-06-07 US US16/434,236 patent/US10992105B2/en active Active
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