JPWO2019155652A1 - 半導体製造装置用ヒータ - Google Patents
半導体製造装置用ヒータ Download PDFInfo
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Abstract
Description
AlNセラミック基体の内部に発熱体が埋設された半導体製造装置用ヒータであって、
前記AlNセラミック基体は、不純物元素としてO,C,Ti,Ca,Yを含むと共に結晶相としてイットリウムアルミネート相を含み、Ti/Caの質量比が0.13以上であり、CuKα線を用いて測定したXRDプロファイルではTiN相が確認されない、
ものである。
各実験例につき、表1に示すAlN原料粉末を用意した。AlN原料粉末に含まれる不純物元素の質量は、次のように測定した。不純物元素の質量分析は、JIS R1675に準じて実施した。具体的には、酸素はサンプル約0.05g程度をNiカプセルに採取し黒鉛るつぼに投入、加熱・燃焼させ、COとして抽出し、非分散赤外線検出器にて定量した。炭素は約0.5g程度サンプルを採取し助燃剤(Sn等)を添加後加熱・燃焼させ、発生するCO+CO2を非分散赤外線検出器にて定量した。金属不純物は、サンプル約1gを採取し、硝酸・塩酸・過酸化水素水を所定量加え、加熱溶解した溶液をICP発光分析法で測定した。
Claims (8)
- AlNセラミック基体の内部に発熱体が埋設された半導体製造装置用ヒータであって、
前記AlNセラミック基体は、不純物元素としてO,C,Ti,Ca,Yを含むと共に結晶相としてイットリウムアルミネート相を含み、Ti/Caの質量比が0.13以上であり、CuKα線を用いて測定したXRDプロファイルではTiN相が確認されない、
半導体製造装置用ヒータ。 - 前記Ti/Caの質量比が0.5以下である、
請求項1に記載の半導体製造装置用ヒータ。 - 前記AlNセラミック基体のTi含有率が18質量ppm以上95質量ppm以下である、
請求項1又は2に記載の半導体製造装置用ヒータ。 - 前記AlNセラミック基体はYAM及びYALを含み、YAM/YALの質量比が2.8以上5.3以下である、
請求項1〜3のいずれか1項に記載の半導体製造装置用ヒータ。 - 前記AlNセラミック基体中のO/Cの質量比が48以上65以下である、
請求項1〜4のいずれか1項に記載の半導体製造装置用ヒータ。 - 前記AlNセラミック基体の540℃における体積抵抗率が1.0×109Ωcm以上である、
請求項1〜5のいずれか1項に記載の半導体製造装置用ヒータ。 - 前記AlNセラミック基体の曲げ強度が300MPa以上である、
請求項1〜6のいずれか1項に記載の半導体製造装置用ヒータ。 - 前記AlNセラミック基体の熱伝導率が170W/m・K以上である、
請求項1〜7のいずれか1項に記載の半導体製造装置用ヒータ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018020637A JP6393006B1 (ja) | 2018-02-08 | 2018-02-08 | 半導体製造装置用ヒータ |
JP2018020637 | 2018-02-08 | ||
PCT/JP2018/025003 WO2019155652A1 (ja) | 2018-02-08 | 2018-07-02 | 半導体製造装置用ヒータ |
Publications (2)
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JPWO2019155652A1 true JPWO2019155652A1 (ja) | 2020-08-20 |
JP6902562B2 JP6902562B2 (ja) | 2021-07-14 |
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JP2018020637A Active JP6393006B1 (ja) | 2018-02-08 | 2018-02-08 | 半導体製造装置用ヒータ |
JP2018566329A Active JP6902562B2 (ja) | 2018-02-08 | 2018-07-02 | 半導体製造装置用ヒータ |
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US (1) | US11437260B2 (ja) |
JP (2) | JP6393006B1 (ja) |
KR (2) | KR102151618B1 (ja) |
CN (2) | CN114093792A (ja) |
TW (1) | TWI783000B (ja) |
WO (1) | WO2019155652A1 (ja) |
Families Citing this family (3)
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KR102339550B1 (ko) * | 2017-06-30 | 2021-12-17 | 주식회사 미코세라믹스 | 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재 |
WO2020189286A1 (ja) * | 2019-03-18 | 2020-09-24 | 日本碍子株式会社 | セラミックヒータ |
JP7074944B1 (ja) | 2021-03-18 | 2022-05-24 | 日本碍子株式会社 | 半導体製造装置用ヒータ |
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JPH0977558A (ja) * | 1995-09-13 | 1997-03-25 | Toshiba Corp | 窒化アルミニウム焼結体の製造方法 |
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JP2018016517A (ja) * | 2016-07-27 | 2018-02-01 | 日本特殊陶業株式会社 | 窒化アルミニウム焼結体 |
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US10566228B2 (en) * | 2018-02-08 | 2020-02-18 | Ngk Insulators, Ltd. | Heater for semiconductor manufacturing apparatus |
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- 2018-02-08 JP JP2018020637A patent/JP6393006B1/ja active Active
- 2018-07-02 CN CN202111371780.7A patent/CN114093792A/zh active Pending
- 2018-07-02 KR KR1020187037102A patent/KR102151618B1/ko active Application Filing
- 2018-07-02 TW TW107122751A patent/TWI783000B/zh active
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Patent Citations (4)
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JPH0977558A (ja) * | 1995-09-13 | 1997-03-25 | Toshiba Corp | 窒化アルミニウム焼結体の製造方法 |
JP2004203647A (ja) * | 2002-12-24 | 2004-07-22 | Ngk Insulators Ltd | 窒化アルミニウム焼結体、静電チャック及び窒化アルミニウム焼結体の製造方法 |
JP2004262750A (ja) * | 2003-02-28 | 2004-09-24 | Ngk Insulators Ltd | 窒化アルミニウム質材料および半導体製造装置用部材 |
JP2018016517A (ja) * | 2016-07-27 | 2018-02-01 | 日本特殊陶業株式会社 | 窒化アルミニウム焼結体 |
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KR20200103888A (ko) | 2020-09-02 |
CN110352182B (zh) | 2022-02-08 |
CN114093792A (zh) | 2022-02-25 |
US20220005722A1 (en) | 2022-01-06 |
TWI783000B (zh) | 2022-11-11 |
WO2019155652A1 (ja) | 2019-08-15 |
CN110352182A (zh) | 2019-10-18 |
KR20190096798A (ko) | 2019-08-20 |
JP6902562B2 (ja) | 2021-07-14 |
US11437260B2 (en) | 2022-09-06 |
KR102151618B1 (ko) | 2020-09-03 |
TW201934522A (zh) | 2019-09-01 |
KR102189652B1 (ko) | 2020-12-11 |
JP6393006B1 (ja) | 2018-09-19 |
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