JPWO2019017489A1 - 半導体素子の製造装置および半導体素子の製造方法 - Google Patents

半導体素子の製造装置および半導体素子の製造方法 Download PDF

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Publication number
JPWO2019017489A1
JPWO2019017489A1 JP2019530624A JP2019530624A JPWO2019017489A1 JP WO2019017489 A1 JPWO2019017489 A1 JP WO2019017489A1 JP 2019530624 A JP2019530624 A JP 2019530624A JP 2019530624 A JP2019530624 A JP 2019530624A JP WO2019017489 A1 JPWO2019017489 A1 JP WO2019017489A1
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JP
Japan
Prior art keywords
molded body
composite resin
wafer
nozzle
fluororesin
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Pending
Application number
JP2019530624A
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English (en)
Japanese (ja)
Inventor
弘和 山本
弘和 山本
宏貴 伊丹
宏貴 伊丹
勇 野口
野口　　勇
忠和 塚本
忠和 塚本
川戸　進
進 川戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toho Kasei Co Ltd
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Toho Kasei Co Ltd
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Filing date
Publication date
Application filed by Toho Kasei Co Ltd filed Critical Toho Kasei Co Ltd
Publication of JPWO2019017489A1 publication Critical patent/JPWO2019017489A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F1/00—Preventing the formation of electrostatic charges

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2019530624A 2017-07-21 2018-07-20 半導体素子の製造装置および半導体素子の製造方法 Pending JPWO2019017489A1 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017142266 2017-07-21
JP2017142266 2017-07-21
JP2018021651 2018-02-09
JP2018021651 2018-02-09
PCT/JP2018/027360 WO2019017489A1 (fr) 2017-07-21 2018-07-20 Dispositif de fabrication d'élément à semi-conducteurs et procédé de fabrication d'éléments à semi-conducteurs

Publications (1)

Publication Number Publication Date
JPWO2019017489A1 true JPWO2019017489A1 (ja) 2020-07-16

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ID=65016646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019530624A Pending JPWO2019017489A1 (ja) 2017-07-21 2018-07-20 半導体素子の製造装置および半導体素子の製造方法

Country Status (3)

Country Link
JP (1) JPWO2019017489A1 (fr)
TW (1) TW201919102A (fr)
WO (1) WO2019017489A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020100823A (ja) * 2018-12-21 2020-07-02 ダイキン工業株式会社 フルオロポリマー組成物、成形品および射出成形品
JP7324043B2 (ja) * 2019-05-09 2023-08-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102338417B1 (ko) 2019-07-08 2021-12-10 세메스 주식회사 기판 처리 장치
JP7403362B2 (ja) 2020-03-26 2023-12-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102616131B1 (ko) 2020-08-24 2023-12-21 세메스 주식회사 기판 처리 장치, 이온 주입 처리 장치 및 이온 주입 처리 방법
JPWO2022149519A1 (fr) 2021-01-06 2022-07-14

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304138A (ja) * 2003-06-13 2004-10-28 Tokyo Electron Ltd 基板処理装置
JP2006083297A (ja) * 2004-09-16 2006-03-30 Nichias Corp ふっ素樹脂成形体及びその製造方法
JP2006286947A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子デバイス洗浄方法及び電子デバイス洗浄装置
JP2008004762A (ja) * 2006-06-22 2008-01-10 Nippon Valqua Ind Ltd ウエハ洗浄乾燥装置のスピンカップ
JP2008159789A (ja) * 2006-12-22 2008-07-10 Renesas Technology Corp 半導体装置の製造方法
JP2009295751A (ja) * 2008-06-04 2009-12-17 Ebara Corp 基板把持機構および基板把持方法
WO2012107991A1 (fr) * 2011-02-07 2012-08-16 大陽日酸株式会社 Particules résineuses composites, procédé de production de particules résineuses composites, corps moulé en résine composite et son procédé de production
JP2013093407A (ja) * 2011-10-25 2013-05-16 Micro Engineering Inc 基板処理装置及び基板処理方法
JP2014241390A (ja) * 2013-05-13 2014-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017075674A (ja) * 2015-10-16 2017-04-20 サーパス工業株式会社 流体機器

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304138A (ja) * 2003-06-13 2004-10-28 Tokyo Electron Ltd 基板処理装置
JP2006083297A (ja) * 2004-09-16 2006-03-30 Nichias Corp ふっ素樹脂成形体及びその製造方法
JP2006286947A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子デバイス洗浄方法及び電子デバイス洗浄装置
JP2008004762A (ja) * 2006-06-22 2008-01-10 Nippon Valqua Ind Ltd ウエハ洗浄乾燥装置のスピンカップ
JP2008159789A (ja) * 2006-12-22 2008-07-10 Renesas Technology Corp 半導体装置の製造方法
JP2009295751A (ja) * 2008-06-04 2009-12-17 Ebara Corp 基板把持機構および基板把持方法
WO2012107991A1 (fr) * 2011-02-07 2012-08-16 大陽日酸株式会社 Particules résineuses composites, procédé de production de particules résineuses composites, corps moulé en résine composite et son procédé de production
JP2013093407A (ja) * 2011-10-25 2013-05-16 Micro Engineering Inc 基板処理装置及び基板処理方法
JP2014241390A (ja) * 2013-05-13 2014-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017075674A (ja) * 2015-10-16 2017-04-20 サーパス工業株式会社 流体機器

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WO2019017489A1 (fr) 2019-01-24
TW201919102A (zh) 2019-05-16

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