JPWO2018235433A1 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
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- JPWO2018235433A1 JPWO2018235433A1 JP2019525189A JP2019525189A JPWO2018235433A1 JP WO2018235433 A1 JPWO2018235433 A1 JP WO2018235433A1 JP 2019525189 A JP2019525189 A JP 2019525189A JP 2019525189 A JP2019525189 A JP 2019525189A JP WO2018235433 A1 JPWO2018235433 A1 JP WO2018235433A1
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- 239000000758 substrate Substances 0.000 claims abstract description 173
- 239000004020 conductor Substances 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims description 15
- 238000003475 lamination Methods 0.000 claims description 14
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- 238000002955 isolation Methods 0.000 abstract description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
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- 230000005540 biological transmission Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
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- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 239000011521 glass Substances 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
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- 229910052839 forsterite Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- 229910052863 mullite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02913—Measures for shielding against electromagnetic fields
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
2 第1フィルタ(第1の弾性波素子)
3 第2フィルタ(第2の弾性波素子)
6 支持部材
20 第1の基板
20A 第1面(一方の主面)
21 第1の機能電極
22 第1の信号電極
23 第1の配線導体
24 中継電極
25 グランド電極
26 支持基板
30 第2の基板
30A 第1面(一方の主面)
31 第2の機能電極
32 第2の信号電極
33 第2の配線導体
34 支持基板
51 第1の貫通電極
52 第2の貫通電極
62 端子電極
63 グランド電極
64 第1の貫通導体
65 第2の貫通導体
270 低音速膜
271 圧電膜
350 低音速膜
351 圧電膜
Claims (10)
- 第1の弾性波素子と第2の弾性波素子を含む複数の弾性波素子を有し、前記第1の弾性波素子の上に前記第2の弾性波素子を積層した弾性波装置であって、
前記第1の弾性波素子は、
少なくとも一部に圧電性を有する第1の基板と、
前記第1の基板の一方の主面に設けられている第1の機能電極と、
前記第1の基板に設けられており、前記第1の機能電極と電気的に接続された第1の配線導体と
を有し、
前記第2の弾性波素子は、
少なくとも一部に圧電性を有する第2の基板と、
前記第2の基板の一方の主面に設けられている第2の機能電極と、
を有し、
前記第1の弾性波素子は更に、
前記第1の基板の前記一方の主面に設けられており、前記第2の機能電極と電気的に接続されている中継電極と、
前記第1の基板の前記一方の主面に設けられているグランド電極と
を有し、
前記グランド電極は、
前記第1の機能電極及び前記第1の配線導体のうちの少なくとも1つと、前記中継電極と、の間に設けられており、かつ、前記中継電極と電気的に絶縁されている
ことを特徴とする弾性波装置。 - 前記グランド電極は、前記第1の機能電極と電気的に接続されている
ことを特徴とする請求項1記載の弾性波装置。 - 前記第1の弾性波素子は、
前記第1の基板に設けられており、前記第1の配線導体を介して前記第1の機能電極と電気的に接続されている第1の信号電極を更に有し、
前記第2の弾性波素子は、
前記第2の基板に設けられており、前記第2の機能電極と電気的に接続された第2の配線導体と、
前記第2の基板に設けられており、前記第2の配線導体を介して前記第2の機能電極と電気的に接続されている第2の信号電極と、を更に有する
ことを特徴とする請求項1又は2記載の弾性波装置。 - 前記第1の弾性波素子は、
前記第1の基板の前記一方の主面と対向する他方の主面に設けられている信号端子と、
前記第1の基板の前記他方の主面に設けられているグランド端子と、
前記第1の基板を前記積層の方向に沿って貫通し、前記中継電極と前記信号端子とを電気的に接続する第1の貫通電極と、
前記第1の基板を前記積層の方向に沿って貫通し、前記グランド電極と前記グランド端子とを電気的に接続する第2の貫通電極と
を有し、
前記第2の貫通電極は、前記第1の貫通電極と電気的に絶縁されている
ことを特徴とする請求項1〜3のいずれか1項に記載の弾性波装置。 - 前記第2の貫通電極は、前記第1の基板内において前記第1の貫通電極の周囲に設けられている
ことを特徴とする請求項4記載の弾性波装置。 - 前記第1の弾性波素子は、
前記第1の基板を前記積層の方向に沿って貫通し、前記第1の配線導体と電気的に接続される第3の貫通電極を更に有する
ことを特徴とする請求項4又は5記載の弾性波装置。 - 前記第1及び第2の基板のうちの少なくとも一方の基板は、
支持基板と、
前記支持基板の一方の主面に直接又は間接的に形成される圧電膜と、
を有する、
ことを特徴とする請求項1〜6のいずれか1項に記載の弾性波装置。 - 前記少なくとも一方の基板は、
前記支持基板と前記圧電膜の間に形成される低音速膜を更に有し、
前記低音速膜は、前記圧電膜を伝搬する弾性波の伝搬速度よりも低速な伝搬速度で弾性波を伝搬する材料によって形成され、
前記支持基板は、前記圧電膜を伝搬する弾性波の伝搬速度よりも高速な伝搬速度で弾性波を伝搬する材料によって形成されている
ことを特徴とする請求項7記載の弾性波装置。 - 前記第1の機能電極及び前記第2の機能電極のうちの少なくとも一方は、IDT電極である、
ことを特徴とする請求項1〜8のいずれか1項に記載の弾性波装置。 - 前記積層の方向において前記第1の弾性波素子及び前記第2の弾性波素子の積層体を支持する支持部材を更に有し、
前記積層体は、前記第1の弾性波素子を前記支持部材の第1面と対向させるようにして前記支持部材に支持されており、
前記支持部材は、
前記積層の方向において前記支持部材の前記第1面と対向する第2面に設けられている端子電極と、
前記支持部材の前記第2面に設けられているグランド電極と、
前記積層の方向に沿って前記支持部材を貫通するように形成され、前記第1の弾性波素子の前記中継電極と前記端子電極を電気的に接続する第1の貫通導体と、
前記積層の方向に沿って前記支持部材を貫通するように形成され、前記第1の弾性波素子の前記グランド電極と前記支持部材の前記第2面に設けられた前記グランド電極を電気的に接続する第2の貫通導体と
を有する
ことを特徴とする請求項1〜4のいずれか1項に記載の弾性波装置。
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JP2017121721 | 2017-06-21 | ||
JP2017121721 | 2017-06-21 | ||
PCT/JP2018/017440 WO2018235433A1 (ja) | 2017-06-21 | 2018-05-01 | 弾性波装置 |
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JP6915686B2 JP6915686B2 (ja) | 2021-08-04 |
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JP (1) | JP6915686B2 (ja) |
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US11677377B2 (en) | 2018-12-26 | 2023-06-13 | Skyworks Solutions, Inc. | Multi-layer piezoelectric substrate with grounding structure |
JP7340344B2 (ja) * | 2019-03-22 | 2023-09-07 | 太陽誘電株式会社 | 弾性波デバイス、フィルタおよびマルチプレクサ |
WO2021006023A1 (ja) * | 2019-07-11 | 2021-01-14 | 株式会社村田製作所 | 高周波モジュール、通信装置及び弾性波装置 |
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