JPWO2018088079A1 - 化合物、薄膜形成用原料、薄膜の製造方法及びアミジン化合物 - Google Patents
化合物、薄膜形成用原料、薄膜の製造方法及びアミジン化合物 Download PDFInfo
- Publication number
- JPWO2018088079A1 JPWO2018088079A1 JP2018550070A JP2018550070A JPWO2018088079A1 JP WO2018088079 A1 JPWO2018088079 A1 JP WO2018088079A1 JP 2018550070 A JP2018550070 A JP 2018550070A JP 2018550070 A JP2018550070 A JP 2018550070A JP WO2018088079 A1 JPWO2018088079 A1 JP WO2018088079A1
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- compound
- group
- carbon atoms
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 127
- 239000002994 raw material Substances 0.000 title claims abstract description 94
- 239000010409 thin film Substances 0.000 title claims description 163
- -1 amidine compound Chemical class 0.000 title claims description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 230000015572 biosynthetic process Effects 0.000 title description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 56
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 51
- 239000010941 cobalt Substances 0.000 claims abstract description 51
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 7
- 239000011572 manganese Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 35
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 26
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 21
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 21
- 230000008016 vaporization Effects 0.000 claims description 19
- 125000004429 atom Chemical group 0.000 claims description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 150000002815 nickel Chemical group 0.000 claims description 3
- 101100386054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CYS3 gene Proteins 0.000 abstract 1
- 101150035983 str1 gene Proteins 0.000 abstract 1
- 238000000034 method Methods 0.000 description 77
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 58
- 229910052751 metal Inorganic materials 0.000 description 46
- 239000002243 precursor Substances 0.000 description 46
- 239000000243 solution Substances 0.000 description 46
- 239000002184 metal Substances 0.000 description 44
- 239000002904 solvent Substances 0.000 description 39
- 239000007789 gas Substances 0.000 description 37
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 33
- 238000005229 chemical vapour deposition Methods 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 30
- 229910052719 titanium Inorganic materials 0.000 description 30
- 239000010936 titanium Substances 0.000 description 30
- 239000000203 mixture Substances 0.000 description 27
- 239000003921 oil Substances 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- 238000001816 cooling Methods 0.000 description 26
- 238000004458 analytical method Methods 0.000 description 25
- 230000008018 melting Effects 0.000 description 18
- 238000002844 melting Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 16
- 238000000151 deposition Methods 0.000 description 16
- 238000001914 filtration Methods 0.000 description 16
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 15
- 238000004821 distillation Methods 0.000 description 15
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 239000007788 liquid Substances 0.000 description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 238000009834 vaporization Methods 0.000 description 12
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 11
- 230000018044 dehydration Effects 0.000 description 11
- 238000006297 dehydration reaction Methods 0.000 description 11
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 11
- 239000012044 organic layer Substances 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 11
- 229910052938 sodium sulfate Inorganic materials 0.000 description 11
- 235000011152 sodium sulphate Nutrition 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000005755 formation reaction Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000000921 elemental analysis Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000012434 nucleophilic reagent Substances 0.000 description 8
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 8
- 229910021580 Cobalt(II) chloride Inorganic materials 0.000 description 7
- 229940126062 Compound A Drugs 0.000 description 7
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000000560 X-ray reflectometry Methods 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- 150000001718 carbodiimides Chemical class 0.000 description 7
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 7
- 229940125904 compound 1 Drugs 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 238000010926 purge Methods 0.000 description 7
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 7
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- 238000000160 carbon, hydrogen and nitrogen elemental analysis Methods 0.000 description 6
- 239000000706 filtrate Substances 0.000 description 6
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 6
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 6
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 5
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 5
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 5
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 0 **(**1C(*)=*(*)C2(*)C1(*)*2)N=* Chemical compound **(**1C(*)=*(*)C2(*)C1(*)*2)N=* 0.000 description 4
- YYROPELSRYBVMQ-UHFFFAOYSA-N 4-toluenesulfonyl chloride Chemical compound CC1=CC=C(S(Cl)(=O)=O)C=C1 YYROPELSRYBVMQ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PCLIMKBDDGJMGD-UHFFFAOYSA-N N-bromosuccinimide Chemical compound BrN1C(=O)CCC1=O PCLIMKBDDGJMGD-UHFFFAOYSA-N 0.000 description 4
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 4
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000003852 thin film production method Methods 0.000 description 4
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 4
- RRQHLOZQFPWDCA-UHFFFAOYSA-N 1-n,1-n-dimethylpropane-1,2-diamine Chemical compound CC(N)CN(C)C RRQHLOZQFPWDCA-UHFFFAOYSA-N 0.000 description 3
- MGOLNIXAPIAKFM-UHFFFAOYSA-N 2-isocyanato-2-methylpropane Chemical compound CC(C)(C)N=C=O MGOLNIXAPIAKFM-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 3
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 3
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 3
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- JDQLUYWHCUWSJE-UHFFFAOYSA-N methanolate;titanium(3+) Chemical compound [Ti+3].[O-]C.[O-]C.[O-]C JDQLUYWHCUWSJE-UHFFFAOYSA-N 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 235000015067 sauces Nutrition 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 2
- TUFJIDJGIQOYFY-UHFFFAOYSA-N 2-isothiocyanatobutane Chemical compound CCC(C)N=C=S TUFJIDJGIQOYFY-UHFFFAOYSA-N 0.000 description 2
- VHBFEIBMZHEWSX-UHFFFAOYSA-N 2-isothiocyanatopropane Chemical compound CC(C)N=C=S VHBFEIBMZHEWSX-UHFFFAOYSA-N 0.000 description 2
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052773 Promethium Inorganic materials 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000004663 dialkyl amino group Chemical group 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- TXGJTWACJNYNOJ-UHFFFAOYSA-N hexane-2,4-diol Chemical compound CCC(O)CC(C)O TXGJTWACJNYNOJ-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910017053 inorganic salt Inorganic materials 0.000 description 2
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 2
- 238000010525 oxidative degradation reaction Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 2
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical group 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 125000005270 trialkylamine group Chemical group 0.000 description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- 239000001439 (2R)-2-isothiocyanatobutane Substances 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- BGYBONWLWSMGNV-UHFFFAOYSA-N 1,4,7,10,13,16,19,22-octaoxacyclotetracosane Chemical compound C1COCCOCCOCCOCCOCCOCCOCCO1 BGYBONWLWSMGNV-UHFFFAOYSA-N 0.000 description 1
- QBPPRVHXOZRESW-UHFFFAOYSA-N 1,4,7,10-tetraazacyclododecane Chemical compound C1CNCCNCCNCCN1 QBPPRVHXOZRESW-UHFFFAOYSA-N 0.000 description 1
- MDAXKAUIABOHTD-UHFFFAOYSA-N 1,4,8,11-tetraazacyclotetradecane Chemical compound C1CNCCNCCCNCCNC1 MDAXKAUIABOHTD-UHFFFAOYSA-N 0.000 description 1
- ZSYDXGXJLDQPGF-UHFFFAOYSA-N 1-[1-(dimethylamino)propan-2-yl]-3-propan-2-ylthiourea Chemical compound CC(C)NC(=S)NC(C)CN(C)C ZSYDXGXJLDQPGF-UHFFFAOYSA-N 0.000 description 1
- BOSXGAWLRJXXDG-UHFFFAOYSA-N 1-butan-2-yl-3-[1-(dimethylamino)propan-2-yl]thiourea Chemical compound C(C)(CC)NC(=S)NC(CN(C)C)C BOSXGAWLRJXXDG-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- 125000006219 1-ethylpentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- NSIPDYNOORNMRL-UHFFFAOYSA-N 1-methoxy-2-methylpropan-2-olate titanium(4+) Chemical compound COCC(C)(C)O[Ti](OC(C)(C)COC)(OC(C)(C)COC)OC(C)(C)COC NSIPDYNOORNMRL-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- GAUJAKNUWOPVHJ-UHFFFAOYSA-N 1-tert-butyl-3-[1-(dimethylamino)propan-2-yl]urea Chemical compound CC(CN(C)C)NC(=O)NC(C)(C)C GAUJAKNUWOPVHJ-UHFFFAOYSA-N 0.000 description 1
- YYDGNTMECPHNQA-UHFFFAOYSA-N 1-tert-butyl-3-[3-(dimethylamino)propyl]urea Chemical compound CN(C)CCCNC(=O)NC(C)(C)C YYDGNTMECPHNQA-UHFFFAOYSA-N 0.000 description 1
- XEZNGIUYQVAUSS-UHFFFAOYSA-N 18-crown-6 Chemical compound C1COCCOCCOCCOCCOCCO1 XEZNGIUYQVAUSS-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- DSKYSDCYIODJPC-UHFFFAOYSA-N 2-butyl-2-ethylpropane-1,3-diol Chemical compound CCCCC(CC)(CO)CO DSKYSDCYIODJPC-UHFFFAOYSA-N 0.000 description 1
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 1
- 125000004200 2-methoxyethyl group Chemical group [H]C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 1
- QUVMSYUGOKEMPX-UHFFFAOYSA-N 2-methylpropan-1-olate;titanium(4+) Chemical compound [Ti+4].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-].CC(C)C[O-] QUVMSYUGOKEMPX-UHFFFAOYSA-N 0.000 description 1
- QWGRWMMWNDWRQN-UHFFFAOYSA-N 2-methylpropane-1,3-diol Chemical compound OCC(C)CO QWGRWMMWNDWRQN-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- XPQCITLHEHJFAV-UHFFFAOYSA-N C(C(C)C)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(C(C)C)C1(C=CC=C1)[Ti](OC)(OC)OC XPQCITLHEHJFAV-UHFFFAOYSA-N 0.000 description 1
- CPMUVNCGPNMMSG-UHFFFAOYSA-N C(C)(C)(C)NC(=O)NCCN(C)C Chemical compound C(C)(C)(C)NC(=O)NCCN(C)C CPMUVNCGPNMMSG-UHFFFAOYSA-N 0.000 description 1
- SBGNWTFRPMHHEF-UHFFFAOYSA-N C(C)C(CO)(CO)CC.C(C)C(CO)(C(C)O)CC Chemical compound C(C)C(CO)(CO)CC.C(C)C(CO)(C(C)O)CC SBGNWTFRPMHHEF-UHFFFAOYSA-N 0.000 description 1
- IPTGOPJXEXTNCE-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ti](N(C)C)(N(C)C)N(C)C Chemical compound C(C)C1(C=CC=C1)[Ti](N(C)C)(N(C)C)N(C)C IPTGOPJXEXTNCE-UHFFFAOYSA-N 0.000 description 1
- ANWKVNXHQDRSQF-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC Chemical compound C(C)C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC ANWKVNXHQDRSQF-UHFFFAOYSA-N 0.000 description 1
- DTOHEKDIBNUSIP-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(C)C1(C=CC=C1)[Ti](OC)(OC)OC DTOHEKDIBNUSIP-UHFFFAOYSA-N 0.000 description 1
- HDGRKNWTTXGATK-UHFFFAOYSA-N C(CC)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(CC)C1(C=CC=C1)[Ti](OC)(OC)OC HDGRKNWTTXGATK-UHFFFAOYSA-N 0.000 description 1
- XJSOMZOHHHAEHM-UHFFFAOYSA-N C(CCC)C1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound C(CCC)C1(C=CC=C1)[Ti](OC)(OC)OC XJSOMZOHHHAEHM-UHFFFAOYSA-N 0.000 description 1
- ZYMRFAAFCPNQEF-UHFFFAOYSA-N C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC Chemical compound C1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC ZYMRFAAFCPNQEF-UHFFFAOYSA-N 0.000 description 1
- RWXRWFPGHUQFHW-UHFFFAOYSA-N C1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC Chemical compound C1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC RWXRWFPGHUQFHW-UHFFFAOYSA-N 0.000 description 1
- HVRIQWXKRCXXNF-UHFFFAOYSA-N CC1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC Chemical compound CC1(C=CC=C1)[Ti](N(CC)C)(N(CC)C)N(C)CC HVRIQWXKRCXXNF-UHFFFAOYSA-N 0.000 description 1
- HXAAXAPDZBYKPT-UHFFFAOYSA-N CC1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC Chemical compound CC1(C=CC=C1)[Ti](N(CC)CC)(N(CC)CC)N(CC)CC HXAAXAPDZBYKPT-UHFFFAOYSA-N 0.000 description 1
- YQZCFUHFPMUPFE-UHFFFAOYSA-N CC1(C=CC=C1)[Ti](OC)(OC)OC Chemical compound CC1(C=CC=C1)[Ti](OC)(OC)OC YQZCFUHFPMUPFE-UHFFFAOYSA-N 0.000 description 1
- YMMQIRAORSQFSY-UHFFFAOYSA-N CCC(C)(C)[Ti](C(C)(C)CC)(C(C)(C)CC)C(C)(C)CC Chemical compound CCC(C)(C)[Ti](C(C)(C)CC)(C(C)(C)CC)C(C)(C)CC YMMQIRAORSQFSY-UHFFFAOYSA-N 0.000 description 1
- TXPAAJFKASNIGR-UHFFFAOYSA-N CN(C)[Ti](C1C=CC=C1)(N(C)C)N(C)C Chemical compound CN(C)[Ti](C1C=CC=C1)(N(C)C)N(C)C TXPAAJFKASNIGR-UHFFFAOYSA-N 0.000 description 1
- FLTYUJMFMHOICO-UHFFFAOYSA-N CO[Ti] Chemical compound CO[Ti] FLTYUJMFMHOICO-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RFFFKMOABOFIDF-UHFFFAOYSA-N Pentanenitrile Chemical compound CCCCC#N RFFFKMOABOFIDF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ATLJOUJUCRBASY-UHFFFAOYSA-N [Tm].[Yb] Chemical compound [Tm].[Yb] ATLJOUJUCRBASY-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- BTGRAWJCKBQKAO-UHFFFAOYSA-N adiponitrile Chemical compound N#CCCCCC#N BTGRAWJCKBQKAO-UHFFFAOYSA-N 0.000 description 1
- 239000003905 agrochemical Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 125000005103 alkyl silyl group Chemical group 0.000 description 1
- 125000005263 alkylenediamine group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- YLBGXUJFSMDKDD-UHFFFAOYSA-N benzene-1,4-dicarbonitrile;pyridine Chemical compound C1=CC=NC=C1.N#CC1=CC=C(C#N)C=C1 YLBGXUJFSMDKDD-UHFFFAOYSA-N 0.000 description 1
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- KVNRLNFWIYMESJ-UHFFFAOYSA-N butyronitrile Chemical compound CCCC#N KVNRLNFWIYMESJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001869 cobalt compounds Chemical class 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 description 1
- 150000003983 crown ethers Chemical class 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- MGWYSXZGBRHJNE-UHFFFAOYSA-N cyclohexane-1,4-dicarbonitrile Chemical compound N#CC1CCC(C#N)CC1 MGWYSXZGBRHJNE-UHFFFAOYSA-N 0.000 description 1
- VBWIZSYFQSOUFQ-UHFFFAOYSA-N cyclohexanecarbonitrile Chemical compound N#CC1CCCCC1 VBWIZSYFQSOUFQ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004807 desolvation Methods 0.000 description 1
- 125000004985 dialkyl amino alkyl group Chemical group 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- 125000004984 dialkylaminoalkoxy group Chemical group 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- UNTITLLXXOKDTB-UHFFFAOYSA-N dibenzo-24-crown-8 Chemical compound O1CCOCCOCCOC2=CC=CC=C2OCCOCCOCCOC2=CC=CC=C21 UNTITLLXXOKDTB-UHFFFAOYSA-N 0.000 description 1
- BBGKDYHZQOSNMU-UHFFFAOYSA-N dicyclohexano-18-crown-6 Chemical compound O1CCOCCOC2CCCCC2OCCOCCOC2CCCCC21 BBGKDYHZQOSNMU-UHFFFAOYSA-N 0.000 description 1
- QMLGNDFKJAFKGZ-UHFFFAOYSA-N dicyclohexano-24-crown-8 Chemical compound O1CCOCCOCCOC2CCCCC2OCCOCCOCCOC2CCCCC21 QMLGNDFKJAFKGZ-UHFFFAOYSA-N 0.000 description 1
- NNUZNYLOAGGAIU-UHFFFAOYSA-N diethylazanide titanium(3+) Chemical compound CCN(CC)[Ti](N(CC)CC)N(CC)CC NNUZNYLOAGGAIU-UHFFFAOYSA-N 0.000 description 1
- IUNMPGNGSSIWFP-UHFFFAOYSA-N dimethylaminopropylamine Chemical compound CN(C)CCCN IUNMPGNGSSIWFP-UHFFFAOYSA-N 0.000 description 1
- CRGGFGFWZPSXPP-UHFFFAOYSA-N dimethylazanide;titanium(3+) Chemical compound [Ti+3].C[N-]C.C[N-]C.C[N-]C CRGGFGFWZPSXPP-UHFFFAOYSA-N 0.000 description 1
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- ZTOMUSMDRMJOTH-UHFFFAOYSA-N glutaronitrile Chemical compound N#CCCCC#N ZTOMUSMDRMJOTH-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 1
- ILPNRWUGFSPGAA-UHFFFAOYSA-N heptane-2,4-dione Chemical compound CCCC(=O)CC(C)=O ILPNRWUGFSPGAA-UHFFFAOYSA-N 0.000 description 1
- DGCTVLNZTFDPDJ-UHFFFAOYSA-N heptane-3,5-dione Chemical compound CCC(=O)CC(=O)CC DGCTVLNZTFDPDJ-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- NDOGLIPWGGRQCO-UHFFFAOYSA-N hexane-2,4-dione Chemical compound CCC(=O)CC(C)=O NDOGLIPWGGRQCO-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical group [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- DILRJUIACXKSQE-UHFFFAOYSA-N n',n'-dimethylethane-1,2-diamine Chemical compound CN(C)CCN DILRJUIACXKSQE-UHFFFAOYSA-N 0.000 description 1
- DWFKOMDBEKIATP-UHFFFAOYSA-N n'-[2-[2-(dimethylamino)ethyl-methylamino]ethyl]-n,n,n'-trimethylethane-1,2-diamine Chemical compound CN(C)CCN(C)CCN(C)CCN(C)C DWFKOMDBEKIATP-UHFFFAOYSA-N 0.000 description 1
- LSHROXHEILXKHM-UHFFFAOYSA-N n'-[2-[2-[2-(2-aminoethylamino)ethylamino]ethylamino]ethyl]ethane-1,2-diamine Chemical compound NCCNCCNCCNCCNCCN LSHROXHEILXKHM-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- BTNXBLUGMAMSSH-UHFFFAOYSA-N octanedinitrile Chemical compound N#CCCCCCCC#N BTNXBLUGMAMSSH-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- OOFGXDQWDNJDIS-UHFFFAOYSA-N oxathiolane Chemical compound C1COSC1 OOFGXDQWDNJDIS-UHFFFAOYSA-N 0.000 description 1
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 description 1
- GTCCGKPBSJZVRZ-UHFFFAOYSA-N pentane-2,4-diol Chemical compound CC(O)CC(C)O GTCCGKPBSJZVRZ-UHFFFAOYSA-N 0.000 description 1
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- ASRAWSBMDXVNLX-UHFFFAOYSA-N pyrazolynate Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(=O)C=1C(C)=NN(C)C=1OS(=O)(=O)C1=CC=C(C)C=C1 ASRAWSBMDXVNLX-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
- C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
- C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
- C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
また、本発明によれば、上記の化合物を合成するために用いることができるアミジン化合物を得ることができる。
上記一般式(1)で表される化合物のうち、Mがコバルトである化合物を製造する場合には、例えば、塩化コバルト(II)に対応する構造のアミジン化合物をノルマルブチルリチウム存在下で反応させることで製造することができる。Mが銅、鉄、ニッケル又はマンガンである化合物を製造する場合には、出発原料として各金属の塩化物を使用すること以外は上記の製造方法と同様の方法で製造することができる。
また、堆積速度は、原料の供給条件(気化温度、気化圧力)、反応温度、反応圧力によりコントロールすることができる。堆積速度は、大きいと得られる薄膜の特性が悪化する場合があり、小さいと生産性に問題を生じる場合があるので、0.01〜100nm/分が好ましく、1〜50nm/分がより好ましい。また、ALD法の場合は、所望の膜厚が得られるようにサイクルの回数でコントロールされる。
2L4つ口フラスコにtertブチルイソシアネート21.3g(0.215mol)とジエチルエーテル131.7gを仕込み、水冷下で撹拌した。この溶液にN,N−ジメチルプロパン−1,2−ジアミン22.1g(0.216mol)とジエチルエーテル55.6gの溶液を滴下した。滴下後、室温に戻し3時間撹拌した。その後、微減圧下オイルバス60℃で脱溶媒を行い、無色オイル状の1−(tertブチル)−3−(1−ジメチルアミノプロパン−2−イル)ウレアを得た。この中にジクロロメタン419.0gとトリエチルアミン97.8g(0.966mol)を仕込み、氷冷下で撹拌した。この溶液にp−トルエンスルホン酸クロリド83.7g(0.439mol)とジクロロメタン641.4gの溶液を滴下した。滴下後、室温に戻し14時間撹拌し、次いで4時間加熱還流させた。室温に戻した後、40%炭酸カリウム水溶液で反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス60℃で脱溶媒を行い、溶媒留去後、微減圧下オイルバス85℃で蒸留を行うことで無色透明のカルボジイミド化合物Aを収量26.9g、収率69%で得た。500mL4つ口フラスコにカルボジイミド化合物A26.0g(0.141mol)とジエチルエーテル51.1gを仕込み、氷冷下で撹拌した。この溶液にメチルリチウムジエチルエーテル溶液130mL(0.143mol)を滴下した。滴下後、室温に戻し15時間撹拌した。その後、氷冷下で水を滴下し反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス70℃で脱溶媒を行い、溶媒留去後、微減圧下オイルバス85℃で蒸留を行うことで無色透明の目的物を収量24.6g、収率87%で得た。
(1)GC−MS m/z: 199(M+)
(2)1NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(1.28〜1.30:d:3)(1.38:s:3)(1.39:s:9)(2.19:s:6)(2.27〜2.32:m:1)(3.05:br:1)(3.43:br:1)
500mL4つ口フラスコに、塩化コバルト(II)8.60g(0.066mol)とテトラヒドロフラン69.5gを仕込み、室温下で撹拌した。その中に、化合物No.151 24.4g(0.132mol)、ノルマルヘキサン85.6g及びnBuLi57.6g(0.132mol)により調製した溶液を氷冷下で滴下し、滴下後、室温に戻し17時間攪拌し、濾過を行った。得られた濾液から溶媒を除去し、残渣をバス温度160℃、圧力77Pa、塔頂温度132℃で蒸留を行い、濃緑色液体である目的物を得た。収量は20.0g、収率は66%であった。
(1)常圧TG−DTA
質量50%減少温度:236℃(Ar流量:100ml/分、昇温10℃/分、サンプル量:9.496mg)
(2)元素分析(金属分析:ICP−AES、CHN分析:CHN分析装置)
コバルト含有量:13.0質量%(理論値:12.94質量%)
C:57.9質量%(理論値:58.00質量%)、H:10.5質量%(理論値:10.62質量%)、N:18.6質量%(理論値:18.45質量%)
1L4つ口フラスコにtertブチルイソシアネート10.2g(0.103mol)とジエチルエーテル73.0gを仕込み、水冷下で撹拌した。この溶液にN,N−ジメチルエチレンジアミン8.90g(0.101mol)とジエチルエーテル34.9gの溶液を滴下した。滴下後、室温に戻し3時間撹拌した。その後、オイルバス60℃微減圧下で脱溶媒を行い、無色オイル状の1−(tertブチル)−3−(2−ジメチルアミノエチル)ウレアを得た。この中にジクロロメタン275.3gとトリエチルアミン45.6g(0.460mol)を仕込み、氷冷下で撹拌した。この溶液にp−トルエンスルホン酸クロリド38.8g(0.203mol)とジクロロメタン284.5gの溶液を滴下した。滴下後、室温に戻し2時間撹拌し、40%炭酸カリウム水溶液で反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス55℃で脱溶媒を行い、溶媒留去後、オイルバス80℃微減圧下で蒸留を行うことで無色透明のカルボジイミド化合物Bを収量9.75g、収率55.7%で得た。200mL4つ口フラスコにカルボジイミド化合物B10.5g(0.062mol)とジエチルエーテル42.9gを仕込み、氷冷下で撹拌した。この溶液にメチルリチウムジエチルエーテル溶液62ml(0.062mol)を滴下した。滴下後、室温に戻し16時間撹拌した。その後、氷冷下で水を滴下し反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス75℃で脱溶媒を行い、溶媒留去後、オイルバス75℃微減圧下で蒸留を行うことで無色透明の目的物(下記に示す公知化合物A)を収量9.67g、収率84%で得た。
(1)GC−MS m/z: 185(M+)
(2)1NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(1.31:s:3)(1.39:s:9)(2.23:s:6)(2.65:m:2)(3.36〜3.40:t:2)
300mL3つ口フラスコに、塩化コバルト(II)5.31g(0.041mol)、テトラヒドロフラン74.9gを仕込み、室温下で撹拌した。その中に、公知化合物A 15.30g(0.083mol)、ノルマルヘキサン65.9g及びnBuLi35.2g(0.082mol)により調製した溶液を氷冷下で滴下し、滴下後室温に戻し19時間攪拌し、濾過を行った。得られた濾液から溶媒を除去し、残渣をクーゲルロールにて温度130℃、圧力57Paで精製し、濃緑色固体を得た。
(1)常圧TG−DTA
質量50%減少温度:224℃(Ar流量:100ml/分、昇温10℃/分、サンプル量:8.619mg)
(2)元素分析(金属分析:ICP−AES、CHN分析:CHN分析装置)
コバルト含有量:13.7質量%(理論値:13.78質量%)
C:56.4質量%(理論値:56.19質量%)、H:10.3質量%(理論値:10.37質量%)、N:19.6質量%(理論値:19.66質量%)
2L4つ口フラスコにtertブチルイソシアネート18.8g(0.190mol)とジエチルエーテル129.7gを仕込み、水冷下で撹拌した。この溶液にN,N−ジメチル−1,3−プロパンジアミン19.4g(0.190mol)とジエチルエーテル45.4gの溶液を滴下した。滴下後、室温に戻し3時間撹拌した。その後、オイルバス70℃微減圧下で脱溶媒を行い、無色オイル状の1−(tertブチル)−3−(3−ジメチルアミノプロピル)ウレアを得た。この中にジクロロメタン304.2gとトリエチルアミン83.2g(0.822mol)を仕込み、氷冷下で撹拌した。この溶液にp−トルエンスルホン酸クロリド71.4g(0.374mol)とジクロロメタン534.4gの溶液を滴下した。滴下後、室温に戻し14時間撹拌し、40%炭酸カリウム水溶液で反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス80℃で脱溶媒を行い、溶媒留去後、オイルバス95℃微減圧下で蒸留を行うことで無色透明のカルボジイミド化合物Cを収量6.16g、収率18%で得た。200mL4つ口フラスコにカルボジイミド化合物C5.05g(0.027mol)とジエチルエーテル41.9gを仕込み、氷冷下で撹拌した。この溶液にメチルリチウムジエチルエーテル溶液25ml(0.027mol)を滴下した。滴下後、室温に戻し3時間撹拌した。その後、氷冷下で水を滴下し反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス80℃で脱溶媒を行い、溶媒留去後、オイルバス100℃微減圧下で蒸留を行うことで無色透明の目的物(下記に示す化合物No.157)を収量5.20g、収率80%で得た。
(1)GC−MS m/z: 199(M+)
(2)1NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(1.34:s:3)(1.39:s:9)(1.86〜1.90:t:2)(2.17:s:6)(2.43〜2.47:t:2)(3.23〜3.26:t:2)
100mL3つ口フラスコに、塩化コバルト(II)1.72g(0.013mol)、テトラヒドロフラン23.9gを仕込み、室温下で撹拌した。その中に、化合物No.157を5.20g(0.026mol)、ノルマルヘキサン20.9g及びnBuLi11.4g(0.026mol)により調製した溶液を氷冷下で滴下し、滴下後室温に戻し16時間攪拌し、濾過を行った。得られた濾液から溶媒を除去し、残渣をクーゲルロールにて温度145℃、圧力59Paで精製し、濃緑色液体(下記に示す化合物No.158)を得た。収量は0.51g、収率は8%であった。
(1)常圧TG−DTA
質量50%減少温度:249℃(Ar流量:100ml/分、昇温10℃/分、サンプル量:10.121mg)
(2)元素分析(金属分析:ICP−AES、CHN分析:CHN分析装置)
コバルト含有量:13.0質量%(理論値:12.94質量%)
C:58.1質量%(理論値:58.00質量%)、H:10.5質量%(理論値:10.62質量%)、N:18.4質量%(理論値:18.45質量%)
500mL4つ口フラスコにカルボジイミド化合物A10.0g(0.055mol)とジエチルエーテル78.6gを仕込み、氷冷下で撹拌した。この溶液にエチルリチウムベンゼンシクロヘキサン溶液230ml(0.115mol)を滴下した。滴下後、室温に戻し48時間撹拌し、次いで23時間加熱還流させた。室温に戻した後、氷冷下で水を滴下し反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス70℃で脱溶媒を行い、溶媒留去後、オイルバス90℃微減圧下で蒸留を行うことで無色透明の目的物(下記に示す化合物No.159)を収量8.2g、収率66%で得た。
(1)GC−MS m/z: 227(M+)
(2)1NMR(溶媒:重ベンゼン)(ケミカルシフト:多重度:H数)
(0.88〜0.92:t:3)(1.30〜1.32:d:3)(1.41:s:9)(1.75〜1.79:m:2)(2.19:s:6)(2.26〜2.30:m:1)(3.11:br:1)(3.51:br:1)
200mL4つ口フラスコに、塩化コバルト(II)2.66g(0.020mol)、テトラヒドロフラン25.0gを仕込み、室温下で撹拌した。その中に、化合物No.159を9.20g(0.040mol)、ノルマルヘキサン23.3g及びnBuLi20.2g(0.047mol)により調製した溶液を氷冷下で滴下し、滴下後室温に戻し16時間攪拌し、濾過を行った。得られた濾液から溶媒を除去し、残渣をバス温度170℃、圧力26Pa、塔頂温度122℃で蒸留を行い、濃緑色液体を得た。収量は4.0g、収率は40%であった。
(1)常圧TG−DTA
質量50%減少温度:244℃(Ar流量:100ml/分、昇温10℃/分、サンプル量:10.122mg)
(2)元素分析(金属分析:ICP−AES、CHN分析:CHN分析装置)
コバルト含有量:12.3質量%(理論値:12.18質量%)
C:59.4質量%(理論値:59.60質量%)、H:11.0質量%(理論値:10.84質量%)、N:17.3質量%(理論値:17.38質量%)
2L4つ口フラスコにイソプロピルイソチオシアネート24.1g(0.237mol)とジエチルエーテル385.8gを仕込み、水冷下で撹拌した。この溶液にN,N−ジメチルプロパン−1,2−ジアミン26.9g(0.263mol)とジエチルエーテル119.8gの溶液を滴下した。滴下後、室温に戻し14時間撹拌した。その後、オイルバス65℃微減圧下で脱溶媒を行い、無色オイル状の1−(1−ジメチルアミノプロパン−2−イル)−3−イソプロピルチオウレアを得た。この中にジクロロメタン507.8gとトリエチルアミン85.0g(0.840mol)を仕込み、−40℃に冷却し撹拌した。この溶液にN−ブロモスクシンイミド46.3g(0.260mol)とジクロロメタン847.6gの溶液を滴下した。滴下後、室温に戻し16時間撹拌した。40%炭酸カリウム水溶液で反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス80℃で脱溶媒を行い、溶媒留去後、オイルバス90℃微減圧下で蒸留を行うことで無色透明のカルボジイミド化合物Dを収量19.2g、収率48%で得た。500mL4つ口フラスコにカルボジイミド化合物D19.2g(0.113mol)とジエチルエーテル63.9gを仕込み、氷冷下で撹拌した。この溶液にメチルリチウムジエチルエーテル溶液113ml(0.113mol)を滴下した。滴下後、室温に戻し15時間撹拌した。その後、氷冷下で水を滴下し反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス70℃で脱溶媒を行い、溶媒留去後、オイルバス90℃微減圧下で蒸留を行うことで無色透明の目的物を収量14.3g、収率69%で得た。
(1)GC−MS m/z: 185(M+)
(2)元素分析(CHN分析装置)
C:64.5質量%(理論値:64.81質量%)、H:12.8質量%(理論値:12.51質量%)、N:22.7質量%(理論値:22.68質量%)
200mL4つ口フラスコに、塩化コバルト(II)2.34g(0.018mol)、テトラヒドロフラン22.7gを仕込み、室温下で撹拌した。その中に、化合物No.127 6.50g(0.035mol)、ノルマルヘキサン21.6g及びnBuLi15.6g(0.035mol)により調製した溶液を氷冷下で滴下し、滴下後室温に戻し16時間攪拌し、濾過を行った。得られた濾液から溶媒を除去し、残渣をバス温度150℃、圧力40Pa、塔頂温度115℃で蒸留を行い、濃緑色液体(下記に示す化合物No.160)を得た。収量は3.6g、収率は48%であった。
(1)常圧TG−DTA
質量50%減少温度:229℃(Ar流量:100ml/分、昇温10℃/分、サンプル量:9.637mg)
(2)元素分析(金属分析:ICP−AES、CHN分析:CHN分析装置)
コバルト含有量:13.6質量%(理論値:13.78質量%)
C:56.3質量%(理論値:56.19質量%)、H:10.2%(理論値:10.37質量%)、N:19.9質量%(理論値:19.66質量%)
2L4つ口フラスコにsecブチルイソチオシアネート25.1g(0.218mol)とジエチルエーテル165.9gを仕込み、水冷下で撹拌した。この溶液にN,N−ジメチルプロパン−1,2−ジアミン24.3g(0.238mol)とジエチルエーテル83.6gの溶液を滴下した。滴下後、室温に戻し19時間撹拌した。その後、オイルバス75℃微減圧下で脱溶媒を行い、無色オイル状の1−(sec−ブチル)−3−(1−ジメチルアミノプロパン−2−イル)チオウレアを得た。この中にジクロロメタン409.0gとトリエチルアミン81.3g(0.803mol)を仕込み、−30℃に冷却し撹拌した。この溶液にN−ブロモスクシンイミド40.9g(0.230mol)とジクロロメタン695.3gの溶液を滴下した。滴下後、室温に戻し18時間撹拌した。40%炭酸カリウム水溶液で反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス80℃で脱溶媒を行い、溶媒留去後、オイルバス95℃微減圧下で蒸留を行うことで無色透明のカルボジイミド化合物Eを収量9.9g、収率25%で得た。200mL4つ口フラスコにカルボジイミド化合物E9.9g(0.054mol)とジエチルエーテル37.6gを仕込み、氷冷下で撹拌した。この溶液にメチルリチウムジエチルエーテル溶液54ml(0.054mol)を滴下した。滴下後、室温に戻し2時間撹拌した。その後、氷冷下で水を滴下し反応を完結させ、有機層を抽出・分液し、硫酸ナトリウムを加えて脱水・ろ過を行った。微減圧下オイルバス70℃で脱溶媒を行い、溶媒留去後、オイルバス85℃微減圧下で蒸留を行うことで無色透明の目的物を収量7.2g、収率67%で得た。
(1)GC−MS m/z: 199(M+)
(2)元素分析(CHN分析装置)
C:66.5質量%(理論値:66.28質量%)、H:12.2質量%(理論値:12.64質量%)、N:21.3質量%(理論値:21.08質量%)
200mL4つ口フラスコに、塩化コバルト(II)1.71g(0.013mol)、テトラヒドロフラン15.1gを仕込み、室温下で撹拌した。その中に、化合物No.139 5.25g(0.026mol)、ノルマルヘキサン17.1g及びnBuLi11.2g(0.026mol)により調製した溶液を氷冷下で滴下し、滴下後室温に戻し21時間攪拌し、濾過を行った。得られた濾液から溶媒を除去し、残渣をバス温度165℃、圧力40Pa、塔頂温度127℃で蒸留を行い、濃緑色液体(下記に示す化合物No.161)を得た。収量は3.5g、収率は59%であった。
(1)常圧TG−DTA
質量50%減少温度:245℃(Ar流量:100ml/分、昇温10℃/分、サンプル量:9.605mg)
(2)元素分析(金属分析:ICP−AES、CHN分析:CHN分析装置)
コバルト含有量:12.9質量%(理論値:12.94質量%)
C:58.1質量%(理論値:58.00質量%)、H:10.5質量%(理論値:10.62質量%)、N:18.5質量%(理論値:18.45質量%)
化合物No.2、1、158、8、160、161及び下記に示す比較化合物1について、目視によって常圧30℃における各化合物の状態を観察し、固体化合物については微小融点測定装置を用いて融点を測定した。また、化合物No.2及び比較化合物1について、TG−DTAを用いて減圧下で重量が50%減少した際の温度を測定した。結果を表1に示す。
(減圧TG−DTA測定条件)
10Torr、Ar流量:50mL/分、昇温速度:10℃/分、サンプル量:9.181mg(化合物No.2、比較化合物1)、8.587mg(化合物No.1)、10.754mg(化合物No.158)、9.527mg(化合物No.8)、9.919mg(化合物No.160)、9.847mg(化合物No.161)
化合物No.2を化学気相成長用原料とし、図1に示す化学気相成長用装置を用いて以下の条件のALD法により、ルテニウム(Ru)基板上に金属コバルト薄膜を製造した。得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は1〜3nmであり、膜組成は金属コバルト(XPS分析によるCo2pピークで確認)であり、薄膜中の残留炭素含有量は検出下限である0.1atom%よりも少なかった。1サイクル当たりに得られる膜厚は、0.01〜0.03nmであった。
反応温度(基板温度);200℃、反応性ガス;水素ガス
(工程)
下記(1)〜(4)からなる一連の工程を1サイクルとして、100サイクル繰り返した。
(1)原料容器加熱温度:110℃、原料容器内圧力:100Paの条件で気化させた化学気相成長用原料を成膜チャンバーに導入し、系圧力:100Paで30秒間堆積させる。
(2)15秒間のアルゴンパージにより、未反応原料及び副生ガスを除去する。
(3)反応性ガスを成膜チャンバーに導入し、系圧力:100Paで30秒間反応させる。
(4)15秒間のアルゴンパージにより、未反応原料及び副生ガスを除去する。
化合物No.1を化学気相成長用原料としたこと以外は、実施例12と同様の方法で金属コバルト薄膜を製造した。得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は0.5〜1.5nmであり、膜組成は金属コバルト(XPS分析によるCo2pピークで確認)であり、薄膜中の残留炭素含有量は0.5atom%であった。1サイクル当たりに得られる膜厚は、0.005〜0.015nmであった。
比較化合物1を化学気相成長用原料とし、図1に示す化学気相成長用装置を用いて以下の条件のALD法により、Ru基板上に金属コバルト薄膜を製造した。Ru基板上に得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は1〜2nmであり、膜組成は金属コバルト(XPS分析によるCo2pピークで確認)であり、薄膜中の残留炭素含有量は5atom%以上であった。1サイクル当たりに得られる膜厚は、0.01〜0.02nmであった。
反応温度(基板温度);200℃、反応性ガス;水素ガス
(工程)
下記(1)〜(4)からなる一連の工程を1サイクルとして、100サイクル繰り返した。
(1)原料容器加熱温度:80℃、原料容器内圧力:100Paの条件で気化させた化学気相成長用原料を成膜チャンバーに導入し、系圧力:100Paで30秒間堆積させる。
(2)15秒間のアルゴンパージにより、未反応原料及び副生ガスを除去する。
(3)反応性ガスを成膜チャンバーに導入し、系圧力:100Paで30秒間反応させる。
(4)15秒間のアルゴンパージにより、未反応原料及び副生ガスを除去する。
化合物No.2を化学気相成長用原料とし、図1に示す化学気相成長用装置を用いて以下の条件のALD法により、SiO2基板表面の半分の面積にルテニウム(Ru)層を形成した基板に各々金属コバルト薄膜の形成を試みた。この結果、Ru層の部分にのみ薄膜が成膜された。Ru層上に得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は1〜3nmであり、膜組成は金属コバルト(XPS分析によるCo2pピークで確認)であり、薄膜中の残留炭素含有量は検出下限である0.1atom%よりも少なかった。1サイクル当たりに得られる膜厚は、0.01〜0.03nmであった。一方、基板のSiO2が露出している部分上からは金属コバルトが検出されなかった。
反応温度(基板温度);150℃、反応性ガス;水素ガス
(工程)
下記(1)〜(4)からなる一連の工程を1サイクルとして、100サイクル繰り返した。
(1)原料容器加熱温度:110℃、原料容器内圧力:100Paの条件で気化させた化学気相成長用原料を成膜チャンバーに導入し、系圧力:100Paで30秒間堆積させる。
(2)15秒間のアルゴンパージにより、未反応原料及び副生ガスを除去する。
(3)反応性ガスを成膜チャンバーに導入し、系圧力:100Paで30秒間反応させる。
(4)15秒間のアルゴンパージにより、未反応原料及び副生ガスを除去する。
化合物No.1を化学気相成長用原料としたこと以外は、実施例14と同様の方法で金属コバルト薄膜を製造した。この結果、Ru層の部分にのみ薄膜が成膜された。Ru層上に得られた薄膜について、X線反射率法による膜厚測定、X線回折法及びX線光電子分光法による薄膜構造及び薄膜組成の確認を行ったところ、膜厚は0.5〜1.5nmであり、膜組成は金属コバルト(XPS分析によるCo2pピークで確認)であり、薄膜中の残留炭素含有量は0.5atom%であった。1サイクル当たりに得られる膜厚は、0.005〜0.015nmであった。
Claims (5)
- 請求項1に記載の化合物を含有してなる薄膜形成用原料。
- 請求項2に記載の薄膜形成用原料を気化させて得られる化合物を含有する蒸気を、基体が設置された成膜チャンバー内に導入し、該化合物を分解及び/又は化学反応させて該基体の表面に銅原子、鉄原子、ニッケル原子、コバルト原子及びマンガン原子から選ばれる少なくとも1種の原子を含有する薄膜を形成する薄膜の製造方法。
- 下記一般式(1):
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016217749 | 2016-11-08 | ||
JP2016217749 | 2016-11-08 | ||
PCT/JP2017/036318 WO2018088079A1 (ja) | 2016-11-08 | 2017-10-05 | 化合物、薄膜形成用原料、薄膜の製造方法及びアミジン化合物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018088079A1 true JPWO2018088079A1 (ja) | 2019-09-26 |
JP7075891B2 JP7075891B2 (ja) | 2022-05-26 |
Family
ID=62109142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018550070A Active JP7075891B2 (ja) | 2016-11-08 | 2017-10-05 | 化合物、薄膜形成用原料及び薄膜の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US11161867B2 (ja) |
EP (1) | EP3539973A4 (ja) |
JP (1) | JP7075891B2 (ja) |
KR (1) | KR102503603B1 (ja) |
CN (1) | CN109923119B (ja) |
IL (1) | IL266365B2 (ja) |
TW (1) | TWI760376B (ja) |
WO (1) | WO2018088079A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102618630B1 (ko) | 2019-10-10 | 2023-12-26 | 삼성에스디아이 주식회사 | 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자 |
JPWO2021205958A1 (ja) | 2020-04-10 | 2021-10-14 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009094262A1 (en) * | 2008-01-24 | 2009-07-30 | Praxair Technology, Inc. | Organometallic compounds, processes and methods of use |
WO2009094263A1 (en) * | 2008-01-24 | 2009-07-30 | Praxair Technology, Inc. | Organometallic compounds, processes and methods of use |
WO2009105668A1 (en) * | 2008-02-20 | 2009-08-27 | President And Fellows Of Harvard College | Bicyclic guanidines, metal complexes thereof and their use in vapor deposition |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH485406A (de) * | 1967-05-30 | 1970-02-15 | Agripat Sa | Fungizides und insektizides Mittel |
DE10206113A1 (de) * | 2002-02-13 | 2003-08-21 | Basf Ag | Metallkomplexe von Iminohydroxamsäuren als Polymerisationskatalysatoren |
EP1563117B1 (en) | 2002-11-15 | 2010-01-06 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
US7632351B2 (en) * | 2005-08-08 | 2009-12-15 | E. I. Du Pont De Nemours And Company | Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes |
JP5779823B2 (ja) | 2010-11-17 | 2015-09-16 | ユーピー ケミカル カンパニー リミテッド | ジアザジエン系金属化合物、これの製造方法及びこれを利用した薄膜形成方法 |
DE102011012515A1 (de) * | 2011-02-25 | 2012-08-30 | Umicore Ag & Co. Kg | Metallkomplexe mit N-Amino-Amidinat-Liganden |
JP2013104100A (ja) * | 2011-11-14 | 2013-05-30 | Taiyo Nippon Sanso Corp | 金属薄膜の成膜方法および金属薄膜成膜用原料 |
JP5963377B1 (ja) | 2015-05-14 | 2016-08-03 | 善郎 水野 | センサ固定システム |
-
2017
- 2017-10-05 US US16/346,724 patent/US11161867B2/en active Active
- 2017-10-05 JP JP2018550070A patent/JP7075891B2/ja active Active
- 2017-10-05 EP EP17868933.7A patent/EP3539973A4/en active Pending
- 2017-10-05 CN CN201780068589.0A patent/CN109923119B/zh active Active
- 2017-10-05 WO PCT/JP2017/036318 patent/WO2018088079A1/ja unknown
- 2017-10-05 KR KR1020197015045A patent/KR102503603B1/ko active IP Right Grant
- 2017-10-05 IL IL266365A patent/IL266365B2/en unknown
- 2017-10-17 TW TW106135405A patent/TWI760376B/zh active
-
2021
- 2021-09-30 US US17/490,227 patent/US11618762B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009094262A1 (en) * | 2008-01-24 | 2009-07-30 | Praxair Technology, Inc. | Organometallic compounds, processes and methods of use |
WO2009094263A1 (en) * | 2008-01-24 | 2009-07-30 | Praxair Technology, Inc. | Organometallic compounds, processes and methods of use |
WO2009105668A1 (en) * | 2008-02-20 | 2009-08-27 | President And Fellows Of Harvard College | Bicyclic guanidines, metal complexes thereof and their use in vapor deposition |
Also Published As
Publication number | Publication date |
---|---|
US11618762B2 (en) | 2023-04-04 |
EP3539973A4 (en) | 2020-05-06 |
TW201829823A (zh) | 2018-08-16 |
IL266365B1 (en) | 2023-08-01 |
WO2018088079A1 (ja) | 2018-05-17 |
CN109923119A (zh) | 2019-06-21 |
JP7075891B2 (ja) | 2022-05-26 |
KR102503603B1 (ko) | 2023-02-23 |
US11161867B2 (en) | 2021-11-02 |
CN109923119B (zh) | 2022-03-18 |
US20200055887A1 (en) | 2020-02-20 |
EP3539973A1 (en) | 2019-09-18 |
IL266365B2 (en) | 2023-12-01 |
TWI760376B (zh) | 2022-04-11 |
IL266365A (en) | 2019-06-30 |
US20220017554A1 (en) | 2022-01-20 |
KR20190082248A (ko) | 2019-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6465699B2 (ja) | ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物 | |
JP6184030B2 (ja) | アルミニウム化合物、薄膜形成用原料及び薄膜の製造方法 | |
JP6200429B2 (ja) | 金属アルコキシド化合物、薄膜形成用原料、薄膜の製造方法及びアルコール化合物 | |
KR102541122B1 (ko) | 신규 화합물, 박막 형성용 원료 및 박막의 제조 방법 | |
EP3476827B1 (en) | Vanadium compound, starting material for thin film formation, and method for producing thin film | |
US11618762B2 (en) | Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound | |
JP6343481B2 (ja) | 薄膜形成用原料、薄膜の製造方法及びアルコール化合物 | |
JP5912911B2 (ja) | アルミニウム化合物を用いたald法による薄膜の製造方法 | |
KR20200083581A (ko) | 루테늄 화합물, 박막 형성용 원료 및 박막의 제조 방법 | |
JP2018035072A (ja) | ジアザジエニル化合物、薄膜形成用原料及び薄膜の製造方法 | |
JP6662779B2 (ja) | アルコキシド化合物、薄膜形成用原料、薄膜の形成方法及びアルコール化合物 | |
JP6408178B2 (ja) | アルコキシド化合物 | |
JP2022161040A (ja) | 原子層堆積法のための薄膜形成原料及びそれを用いた亜鉛含有薄膜の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190716 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200918 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210907 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20211102 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211222 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220407 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20220407 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20220415 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20220419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220510 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220516 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7075891 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |