JPWO2018021413A1 - 光検出装置 - Google Patents
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
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- H01L27/14643—Photodiode arrays; MOS imagers
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Abstract
Description
本変形例では、充填材23aは、充填材13aと同じく、タングステン(W)からなる。溝14の内面は、内面23bと同様に、第一半導体領域2PAよりも不純物濃度が高いP+層によって成形されている。溝14内には、溝23と同様に、絶縁層23c及び充填材23aが配置されている。図7では、上述したように、溝14と、溝14内に配置されている絶縁層23c及び充填材23aとは、図示されていない。充填材13aは、タングステンではなく、銅又はアルミニウムからなっていてもよい。
Claims (8)
- 光検出装置であって、
互いに対向する第一主面及び第二主面を有している半導体基板と、
前記半導体基板の前記第一主面側に配置されている受光領域を有していると共に前記半導体基板に二次元配列されており、ガイガーモードで動作する複数のアバランシェフォトダイオードと、
対応する前記受光領域と電気的に接続されている貫通電極と、
を備え、
前記貫通電極は、前記複数のアバランシェフォトダイオードが二次元配列されている領域内で前記半導体基板を厚み方向に貫通している貫通孔に配置され、
前記半導体基板の前記第一主面側には、前記貫通孔を囲んでいる溝が、前記貫通孔と前記貫通孔と隣り合う前記受光領域との間の領域に形成されており、
前記溝の縁と、前記溝によって囲まれている前記貫通孔の縁との第一距離は、前記溝の縁と、前記溝によって囲まれている前記貫通孔と隣り合う前記受光領域の縁との第二距離よりも長い。 - 請求項1に記載の光検出装置であって、
各前記アバランシェフォトダイオードは、
前記半導体基板の前記第一主面側に位置している第一導電型の第一半導体領域と、
前記半導体基板の前記第二主面側に位置している第二導電型の第二半導体領域と、
前記第一半導体領域と前記第二半導体領域との間に位置し、前記第二半導体領域よりも不純物濃度が低い第二導電型の第三半導体領域と、
前記第一半導体領域内に形成されており、前記第一半導体領域よりも不純物濃度が高い第一導電型の第四半導体領域と、を有し、
前記第四半導体領域が、前記受光領域であり、
前記溝の底面が、前記第二半導体領域により構成されている。 - 請求項1に記載の光検出装置であって、
各前記アバランシェフォトダイオードは、
前記半導体基板の前記第一主面側に位置している第一導電型の第一半導体領域と、
前記半導体基板の前記第二主面側に位置し、前記第一半導体領域よりも不純物濃度が高い第一導電型の第二半導体領域と、
前記第一半導体領域の前記第一主面側に形成されている第二導電型の第三半導体領域と、
前記第三半導体領域と接するように前記第一半導体領域に形成されており、前記第一半導体領域よりも不純物濃度が高い第一導電型の第四半導体領域と、を有し、
前記第三半導体領域が、前記受光領域であり、
前記溝の底面が、前記第二半導体領域により構成されている。 - 請求項1〜3のいずれか一項に記載の光検出装置であって、
前記第一主面上に配置されており、前記貫通電極と電気的に接続されている電極パッドを更に備え、
前記電極パッドは、前記第一主面に直交する方向から見て、前記溝によって囲まれている領域内に位置し、かつ、前記溝から離間している。 - 請求項1〜4のいずれか一項に記載の光検出装置であって、
前記第一主面に直交する方向から見て、前記溝によって囲まれている領域は多角形形状を呈していると共に、前記受光領域は多角形形状を呈している。 - 請求項1〜5のいずれか一項に記載の光検出装置であって、
前記第一主面に直交する方向から見て、前記貫通孔の開口は円形形状であり、
前記貫通孔の内周面には、絶縁層が配置されている。 - 請求項1〜6のいずれか一項に記載の光検出装置であって、
前記複数のアバランシェフォトダイオードは、行列状に配列されており、
前記貫通孔は、前記複数のアバランシェフォトダイオードのうちの互いに隣り合う四つのアバランシェフォトダイオードによって囲まれる領域毎に形成され、
前記貫通孔には、互いに隣り合う前記四つのアバランシェフォトダイオードのうちの一つのアバランシェフォトダイオードの前記受光領域と電気的に接続されている前記貫通電極が配置され、
前記溝は、互いに隣り合う前記四つのアバランシェフォトダイオードの各前記受光領域と前記貫通孔との間の領域に形成されている。 - 請求項7に記載の光検出装置であって、
前記受光領域は、前記第一主面に直交する方向から見て、多角形形状を呈しており、
前記溝は、前記第一主面に直交する前記方向から見て、前記貫通孔と隣り合う前記四つのアバランシェフォトダイオードの各前記受光領域が有している複数の辺のうちの前記貫通孔と隣り合う辺に沿って延在している。
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PCT/JP2017/027057 WO2018021413A1 (ja) | 2016-07-27 | 2017-07-26 | 光検出装置 |
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JP7178819B2 (ja) * | 2018-07-18 | 2022-11-28 | 浜松ホトニクス株式会社 | 半導体光検出装置 |
JP7366558B2 (ja) * | 2019-03-13 | 2023-10-23 | 株式会社東芝 | センサ及び距離計測装置 |
JP7328868B2 (ja) * | 2019-10-30 | 2023-08-17 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
JP2022083194A (ja) * | 2020-11-24 | 2022-06-03 | ソニーセミコンダクタソリューションズ株式会社 | センサデバイス |
USD994512S1 (en) * | 2021-11-01 | 2023-08-08 | SimpliSafe, Inc. | Infrared sensor |
USD994513S1 (en) * | 2021-11-01 | 2023-08-08 | SimpliSafe, Inc. | Infrared sensor |
USD993049S1 (en) * | 2021-11-01 | 2023-07-25 | SimpliSafe, Inc. | Infrared sensor |
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JP2016029738A (ja) * | 2015-10-28 | 2016-03-03 | 浜松ホトニクス株式会社 | 光検出装置 |
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WO2018021413A1 (ja) | 2018-02-01 |
CN109564953B (zh) | 2022-06-14 |
EP3493276A4 (en) | 2020-04-29 |
JP6839713B2 (ja) | 2021-03-10 |
US20190371849A1 (en) | 2019-12-05 |
US11362127B2 (en) | 2022-06-14 |
EP3493276B1 (en) | 2022-03-23 |
CN109564953A (zh) | 2019-04-02 |
US20220231071A1 (en) | 2022-07-21 |
US10658415B2 (en) | 2020-05-19 |
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US20200227464A1 (en) | 2020-07-16 |
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