EP3493276A4 - Light detection device - Google Patents

Light detection device Download PDF

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Publication number
EP3493276A4
EP3493276A4 EP17834415.6A EP17834415A EP3493276A4 EP 3493276 A4 EP3493276 A4 EP 3493276A4 EP 17834415 A EP17834415 A EP 17834415A EP 3493276 A4 EP3493276 A4 EP 3493276A4
Authority
EP
European Patent Office
Prior art keywords
detection device
light detection
light
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17834415.6A
Other languages
German (de)
French (fr)
Other versions
EP3493276B1 (en
EP3493276A1 (en
Inventor
Atsushi Ishida
Noburo HOSOKAWA
Terumasa Nagano
Takashi Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of EP3493276A1 publication Critical patent/EP3493276A1/en
Publication of EP3493276A4 publication Critical patent/EP3493276A4/en
Application granted granted Critical
Publication of EP3493276B1 publication Critical patent/EP3493276B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
EP17834415.6A 2016-07-27 2017-07-26 Light detection device Active EP3493276B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016147378 2016-07-27
PCT/JP2017/027057 WO2018021413A1 (en) 2016-07-27 2017-07-26 Light detection device

Publications (3)

Publication Number Publication Date
EP3493276A1 EP3493276A1 (en) 2019-06-05
EP3493276A4 true EP3493276A4 (en) 2020-04-29
EP3493276B1 EP3493276B1 (en) 2022-03-23

Family

ID=61016014

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17834415.6A Active EP3493276B1 (en) 2016-07-27 2017-07-26 Light detection device

Country Status (5)

Country Link
US (3) US10658415B2 (en)
EP (1) EP3493276B1 (en)
JP (1) JP6839713B2 (en)
CN (1) CN109564953B (en)
WO (1) WO2018021413A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7178819B2 (en) * 2018-07-18 2022-11-28 浜松ホトニクス株式会社 Semiconductor photodetector
JP7366558B2 (en) * 2019-03-13 2023-10-23 株式会社東芝 Sensor and distance measuring device
JP7328868B2 (en) * 2019-10-30 2023-08-17 株式会社東芝 Photodetectors, photodetection systems, lidar devices, and vehicles
JP2022083194A (en) * 2020-11-24 2022-06-03 ソニーセミコンダクタソリューションズ株式会社 Sensor device
USD994513S1 (en) * 2021-11-01 2023-08-08 SimpliSafe, Inc. Infrared sensor
USD994512S1 (en) * 2021-11-01 2023-08-08 SimpliSafe, Inc. Infrared sensor
USD993049S1 (en) * 2021-11-01 2023-07-25 SimpliSafe, Inc. Infrared sensor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090184384A1 (en) * 2008-01-18 2009-07-23 Stmicroelectronics S.R.L. Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof
US20100193954A1 (en) * 2009-02-04 2010-08-05 Max Liu Barrier Structures and Methods for Through Substrate Vias
EP2463896A1 (en) * 2010-12-07 2012-06-13 Imec Method for forming through-substrate vias surrounded by isolation trenches
US20130249011A1 (en) * 2012-03-22 2013-09-26 Texas Instruments Incorporated Integrated circuit (ic) having tsvs and stress compensating layer
US20140210035A1 (en) * 2013-01-28 2014-07-31 Samsung Electronics Co., Ltd. Digital silicon photomultiplier detector cells
US20140291486A1 (en) * 2011-10-21 2014-10-02 Hamamatsu Photonics K.K. Light detection device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4306508B2 (en) * 2004-03-29 2009-08-05 三菱電機株式会社 Avalanche photodiode
JP4611066B2 (en) * 2004-04-13 2011-01-12 三菱電機株式会社 Avalanche photodiode
JP4808759B2 (en) 2008-11-18 2011-11-02 浜松ホトニクス株式会社 Radiation detector
JP2010153603A (en) 2008-12-25 2010-07-08 Fujifilm Corp Solid state imaging apparatus
IT1399075B1 (en) 2010-03-23 2013-04-05 St Microelectronics Srl METHOD OF DETECTION OF POSITIONS OF PHOTONS THAT MIX ON A GEIGER-MODE AVALANCHE PHOTODIODO, RELATED AVAILABLE GEIGER-MODE PHOTODIODS AND MANUFACTURING PROCESS
JP5832852B2 (en) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 Photodetector
JP6079502B2 (en) * 2013-08-19 2017-02-15 ソニー株式会社 Solid-state imaging device and electronic device
JP2015061041A (en) 2013-09-20 2015-03-30 株式会社東芝 Radiation detector and radiation detection device
JP6738129B2 (en) * 2015-07-28 2020-08-12 株式会社東芝 Photodetector and lidar device using the same
ITUB20154111A1 (en) * 2015-10-06 2017-04-06 St Microelectronics Srl AVALANCHE PHOTODIODO IN SILICON CARBIDE FOR THE ULTRAVIOLET RADIATION DETECTION AND ITS PROCESS OF MANUFACTURE
JP5927334B2 (en) 2015-10-28 2016-06-01 浜松ホトニクス株式会社 Photodetector

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090184384A1 (en) * 2008-01-18 2009-07-23 Stmicroelectronics S.R.L. Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof
US20100193954A1 (en) * 2009-02-04 2010-08-05 Max Liu Barrier Structures and Methods for Through Substrate Vias
EP2463896A1 (en) * 2010-12-07 2012-06-13 Imec Method for forming through-substrate vias surrounded by isolation trenches
JP2012124484A (en) * 2010-12-07 2012-06-28 Imec Method for forming isolation trench
US20140291486A1 (en) * 2011-10-21 2014-10-02 Hamamatsu Photonics K.K. Light detection device
US20130249011A1 (en) * 2012-03-22 2013-09-26 Texas Instruments Incorporated Integrated circuit (ic) having tsvs and stress compensating layer
US20140210035A1 (en) * 2013-01-28 2014-07-31 Samsung Electronics Co., Ltd. Digital silicon photomultiplier detector cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2018021413A1 *

Also Published As

Publication number Publication date
WO2018021413A1 (en) 2018-02-01
JPWO2018021413A1 (en) 2019-05-23
JP6839713B2 (en) 2021-03-10
US20220231071A1 (en) 2022-07-21
CN109564953B (en) 2022-06-14
CN109564953A (en) 2019-04-02
US10658415B2 (en) 2020-05-19
US11362127B2 (en) 2022-06-14
US20200227464A1 (en) 2020-07-16
US20190371849A1 (en) 2019-12-05
EP3493276B1 (en) 2022-03-23
EP3493276A1 (en) 2019-06-05

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