JPWO2017065294A1 - 窒化亜鉛系化合物およびその製造方法 - Google Patents
窒化亜鉛系化合物およびその製造方法 Download PDFInfo
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- zinc nitride
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- -1 Zinc nitride compound Chemical class 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- 239000000126 substance Substances 0.000 claims abstract description 40
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910004860 CaZn Inorganic materials 0.000 claims abstract description 36
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 8
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 12
- 239000007795 chemical reaction product Substances 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 9
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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Abstract
化学式CaZn2N2、化学式X1 2ZnN2(X1はBeまたはMgである)等で表される窒化亜鉛系化合物。好適には、1 GPa以上の高圧下で合成される。
Description
(1)化学式CaZn2N2で表される窒化亜鉛系化合物。
(2)化学式X1 2ZnN2(X1はBeまたはMgである)で表される窒化亜鉛系化合物。
(3)化学式Zn3LaN3で表される窒化亜鉛系化合物。
(4)化学式ZnTiN2で表される窒化亜鉛系化合物。
(5)化学式ZnX2N2(X2はZrまたはHfである)で表される窒化亜鉛系化合物。
(6)化学式Zn2X3N3(X3はV、NbまたはTaである)で表される窒化亜鉛系化合物。
(7)化学式Zn3WN4で表される窒化亜鉛系化合物。
(8)化合物半導体である上記(1)〜(7)のいずれかに記載の窒化亜鉛系化合物。
(9)直接遷移型化合物半導体である上記(1)または(3)に記載の窒化亜鉛系化合物。
(10)化学式CaM1 2xZn2(1−x)N2(M1はMgまたはCdである。0≦x≦1)またはM2 xCa1−xZn2N2 (M2はSrまたはBaである。0≦x≦1)で表され、バンドギャップが0.4eV〜3.2eVである化合物半導体。
(12)可視光域で電流注入発光する上記(11)に記載の電子素子。
(13)可視光を吸収し光電圧あるいは光電流を発生する上記(11)に記載の電子素子。
(14)1GPa以上の高圧下で合成する上記(1)〜(7)のいずれかに記載の窒化亜鉛系化合物の製造方法。
A)化学式CaZn2N2で表される窒化亜鉛系化合物。
B)化学式X1 2ZnN2(X1はBeまたはMgである)で表される窒化亜鉛系化合物。
C)化学式Zn3LaN3で表される窒化亜鉛系化合物。
D)化学式ZnTiN2で表される窒化亜鉛系化合物。
E)化学式ZnX2N2(X2はZrまたはHfである)で表される窒化亜鉛系化合物。
F)化学式Zn2X3N3(X3はV、NbまたはTaである)で表される窒化亜鉛系化合物。
G)化学式Zn3WN4で表される窒化亜鉛系化合物。
A)空間群P-3m1に属する。
B)空間群I4/mmmに属する。
C)空間群P63/mに属する。
D)空間群Pna21に属する。
E)空間群P3m1に属する。
F)空間群Cmc21に属する。
G)空間群Pmn21に属する。
得られる高圧合成反応生成物は、生成物中の亜鉛を除去することによりさらに高純度化し得る。好適には、得られる高圧合成反応生成物粉末とI2を、たとえばガラス製容器に入れ、アルゴン、窒素等の不活性雰囲気下に、15〜30℃程度、好ましくは室温で、5〜10分間程度、保持して、亜鉛をヨウ化亜鉛(ZnI2)に変換させる。ついで、生成したヨウ化亜鉛をジメチルエーテル等の溶媒に溶解させて、溶液を除去する。不活性雰囲気を用いるのは、Zn2+、I-の酸化を抑制するためである。
実施例1
CaZn2N2で表される窒化亜鉛系化合物の合成
高圧合成装置内に、モル比でCa3N2:Zn3N2=1:2となるように混合した原料化合物を導入し、2.5GPaで、1100℃、1時間保持した。用いた高圧合成装置は、ベルト式高圧合成装置であり、試料ホルダ:高圧セル、圧力制御範囲:2-5.5GPa、および温度制御範囲:室温〜1600℃である。
比較例1
Ca2ZnN2で表される窒化亜鉛系化合物の合成
電気炉内で、モル比でCa3N2:Zn3N2=2:1となるように混合した原料化合物をSUS管にAr封入して常圧で680℃、40時間保持した。試料ホルダは、SUSガス配管とスウェッジロックを用いた反応菅であった。
実施例2
CaZn2N2で表される窒化亜鉛系化合物の合成
高圧セル内に、モル比でCa3N2:Zn3N2=1:2となるように混合した原料化合物を導入し、高圧合成にて5.0GPaを印加し、1200℃、1時間保持した。用いた高圧合成装置は、ベルト式高圧合成装置であり、試料ホルダ:高圧セル、圧力制御範囲:2-5.5GPa、および温度制御範囲:室温〜1600℃である。
得られた高圧合成反応生成物(CaZn2N2、Zn等)粉末とI2をガラス製容器に入れ、アルゴン雰囲気下に約5分間、室温に保持し、亜鉛をヨウ化亜鉛に変換させた。ついで、生成したヨウ化亜鉛をジメチルエーテルに溶解させて、溶液を除去した。得られた粉末のCaZn2N2は約87.3wt%、亜鉛等は約12.7wt%であった。得られた高純度化粉末生成物のX線回折図形を図10に示す。得られた高純度化粉末生成物約1gを用いて、冷間等方性加圧装置(CIP)により、パルスレーザー堆積ターゲット用のペレットが形成された。
Claims (14)
- 化学式CaZn2N2で表される窒化亜鉛系化合物。
- 化学式X1 2ZnN2(X1はBeまたはMgである)で表される窒化亜鉛系化合物。
- 化学式Zn3LaN3で表される窒化亜鉛系化合物。
- 化学式ZnTiN2で表される窒化亜鉛系化合物。
- 化学式ZnX2N2(X2はZrまたはHfである)で表される窒化亜鉛系化合物。
- 化学式Zn2X3N3(X3はV、NbまたはTaである)で表される窒化亜鉛系化合物。
- 化学式Zn3WN4で表される窒化亜鉛系化合物。
- 化合物半導体である請求項1〜7のいずれか1項に記載の窒化亜鉛系化合物。
- 直接遷移型化合物半導体である請求項1または3に記載の窒化亜鉛系化合物。
- 化学式CaM1 2xZn2(1−x)N2(M1はMgまたはCdである。0≦x≦1)またはM2 xCa1−xZn2N2 (M2はSrまたはBaである。0≦x≦1)で表され、バンドギャップが0.4eV〜3.2eVである化合物半導体。
- 請求項8〜10のいずれか1項に記載の化合物半導体を活性層に有する電子素子。
- 可視光域で電流注入発光する請求項11に記載の電子素子。
- 可視光を吸収し光電圧あるいは光電流を発生する請求項11に記載の電子素子。
- 1 GPa以上の高圧下で合成する請求項1〜7のいずれか1項に記載の窒化亜鉛系化合
物の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2015203891 | 2015-10-15 | ||
JP2015203891 | 2015-10-15 | ||
PCT/JP2016/080597 WO2017065294A1 (ja) | 2015-10-15 | 2016-10-14 | 窒化亜鉛系化合物およびその製造方法 |
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