JPWO2017002670A1 - シリコン材料の切断補助装置、切断方法、切断システム - Google Patents

シリコン材料の切断補助装置、切断方法、切断システム Download PDF

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Publication number
JPWO2017002670A1
JPWO2017002670A1 JP2017526299A JP2017526299A JPWO2017002670A1 JP WO2017002670 A1 JPWO2017002670 A1 JP WO2017002670A1 JP 2017526299 A JP2017526299 A JP 2017526299A JP 2017526299 A JP2017526299 A JP 2017526299A JP WO2017002670 A1 JPWO2017002670 A1 JP WO2017002670A1
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Japan
Prior art keywords
cutting
silicon material
silicon
electrolyzed water
gas
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JP2017526299A
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English (en)
Japanese (ja)
Inventor
西尾　康明
康明 西尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MINAMI MASAYOSHI
SATO HIDEKI
TAKENOUCHI TOSHIKAZU
Original Assignee
MINAMI MASAYOSHI
SATO HIDEKI
TAKENOUCHI TOSHIKAZU
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Application filed by MINAMI MASAYOSHI, SATO HIDEKI, TAKENOUCHI TOSHIKAZU filed Critical MINAMI MASAYOSHI
Publication of JPWO2017002670A1 publication Critical patent/JPWO2017002670A1/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
    • B28D7/02—Accessories specially adapted for use with machines or devices of the preceding groups for removing or laying dust, e.g. by spraying liquids; for cooling work
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M173/00—Lubricating compositions containing more than 10% water
    • C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/14—Alkali metal compounds
    • C25B1/16—Hydroxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Lubricants (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2017526299A 2015-06-29 2016-06-21 シリコン材料の切断補助装置、切断方法、切断システム Pending JPWO2017002670A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015130265 2015-06-29
JP2015130265 2015-06-29
PCT/JP2016/068396 WO2017002670A1 (ja) 2015-06-29 2016-06-21 シリコン材料の切断補助装置、切断方法、切断システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020004285U Continuation JP3229903U (ja) 2015-06-29 2020-10-02 シリコン材料の切断補助装置および切断システム

Publications (1)

Publication Number Publication Date
JPWO2017002670A1 true JPWO2017002670A1 (ja) 2018-07-19

Family

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JP2017526299A Pending JPWO2017002670A1 (ja) 2015-06-29 2016-06-21 シリコン材料の切断補助装置、切断方法、切断システム

Country Status (3)

Country Link
JP (1) JPWO2017002670A1 (zh)
CN (1) CN107851566B (zh)
WO (1) WO2017002670A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109652193B (zh) * 2019-01-25 2021-10-08 广州科卢斯流体科技有限公司 一种亚稳定型半导体金刚线切割液
JP7165079B2 (ja) * 2019-03-12 2022-11-02 日本タングステン株式会社 加工用クーラント供給機構、および、加工用クーラントの供給方法
CN113784828A (zh) * 2019-06-06 2021-12-10 株式会社德山 多晶硅棒的切断方法、多晶硅棒的短棒的制造方法、多晶硅棒的硅粒的制造方法及多晶硅棒的切断装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02262955A (ja) * 1988-12-15 1990-10-25 Nippon Steel Corp Ｓｉインゴットのワイヤソーによる切断法
JP2003068677A (ja) * 2001-08-21 2003-03-07 Sony Corp ダイシング装置およびダイシング方法
JP2005088394A (ja) * 2003-09-18 2005-04-07 Mitsubishi Electric Corp シリコンインゴット切削用スラリーおよびそれを用いるシリコンインゴットの切断方法
JP2009107050A (ja) * 2007-10-29 2009-05-21 Covalent Materials Corp ワイヤソーによるワーク切断方法
JP2010172993A (ja) * 2009-01-28 2010-08-12 Toyo Advanced Technologies Co Ltd ワーク切断方法及びワイヤソー
JP2012092205A (ja) * 2010-10-26 2012-05-17 Nisshin Seiki Kk 機械加工用油剤
JP2013052493A (ja) * 2011-09-06 2013-03-21 Nagaoka Univ Of Technology 機械加工装置およびそれを用いた機械加工方法
JP2013111713A (ja) * 2011-11-29 2013-06-10 Tokyo Seimitsu Co Ltd 切削水の供給装置及び供給方法
JP2013248582A (ja) * 2012-06-01 2013-12-12 Tech Corporation:Kk 電子材料用基板等の被洗浄物の洗浄装置およびその洗浄方法
JP2015098079A (ja) * 2013-11-20 2015-05-28 日藤ポリゴン株式会社 工作機械の冷却装置および冷却方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5289833B2 (ja) * 2008-06-19 2013-09-11 野村マイクロ・サイエンス株式会社 電子部品用シリコンの加工方法及び再生方法
WO2014034924A1 (ja) * 2012-09-03 2014-03-06 学校法人早稲田大学 スラッジ回収方法及び粉粒体

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02262955A (ja) * 1988-12-15 1990-10-25 Nippon Steel Corp Ｓｉインゴットのワイヤソーによる切断法
JP2003068677A (ja) * 2001-08-21 2003-03-07 Sony Corp ダイシング装置およびダイシング方法
JP2005088394A (ja) * 2003-09-18 2005-04-07 Mitsubishi Electric Corp シリコンインゴット切削用スラリーおよびそれを用いるシリコンインゴットの切断方法
JP2009107050A (ja) * 2007-10-29 2009-05-21 Covalent Materials Corp ワイヤソーによるワーク切断方法
JP2010172993A (ja) * 2009-01-28 2010-08-12 Toyo Advanced Technologies Co Ltd ワーク切断方法及びワイヤソー
JP2012092205A (ja) * 2010-10-26 2012-05-17 Nisshin Seiki Kk 機械加工用油剤
JP2013052493A (ja) * 2011-09-06 2013-03-21 Nagaoka Univ Of Technology 機械加工装置およびそれを用いた機械加工方法
JP2013111713A (ja) * 2011-11-29 2013-06-10 Tokyo Seimitsu Co Ltd 切削水の供給装置及び供給方法
JP2013248582A (ja) * 2012-06-01 2013-12-12 Tech Corporation:Kk 電子材料用基板等の被洗浄物の洗浄装置およびその洗浄方法
JP2015098079A (ja) * 2013-11-20 2015-05-28 日藤ポリゴン株式会社 工作機械の冷却装置および冷却方法

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CN107851566A (zh) 2018-03-27
WO2017002670A1 (ja) 2017-01-05
CN107851566B (zh) 2021-08-31

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