JPWO2016194693A1 - ガラス - Google Patents
ガラス Download PDFInfo
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- JPWO2016194693A1 JPWO2016194693A1 JP2017521833A JP2017521833A JPWO2016194693A1 JP WO2016194693 A1 JPWO2016194693 A1 JP WO2016194693A1 JP 2017521833 A JP2017521833 A JP 2017521833A JP 2017521833 A JP2017521833 A JP 2017521833A JP WO2016194693 A1 JPWO2016194693 A1 JP WO2016194693A1
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- 239000011521 glass Substances 0.000 title claims abstract description 145
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 68
- 239000013078 crystal Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 56
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 54
- 238000005530 etching Methods 0.000 claims description 24
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 26
- 238000000034 method Methods 0.000 description 24
- 230000007423 decrease Effects 0.000 description 21
- 239000000126 substance Substances 0.000 description 15
- 238000004031 devitrification Methods 0.000 description 14
- 229910052697 platinum Inorganic materials 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 239000006060 molten glass Substances 0.000 description 10
- 229910006404 SnO 2 Inorganic materials 0.000 description 8
- 238000000465 moulding Methods 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000003513 alkali Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 238000007500 overflow downdraw method Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 4
- 239000006066 glass batch Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052863 mullite Inorganic materials 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229910052661 anorthite Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- GWWPLLOVYSCJIO-UHFFFAOYSA-N dialuminum;calcium;disilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] GWWPLLOVYSCJIO-UHFFFAOYSA-N 0.000 description 3
- 238000003280 down draw process Methods 0.000 description 3
- 239000006025 fining agent Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000004040 coloring Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000009774 resonance method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000008395 clarifying agent Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 229910000514 dolomite Inorganic materials 0.000 description 1
- 239000010459 dolomite Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Glass Compositions (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
β−OH値 = (1/X)log(T1/T2)
X:板厚(mm)
T1:参照波長3846cm−1における透過率(%)
T2:水酸基吸収波長3600cm−1付近における最小透過率(%)
Claims (14)
- ガラス組成として、質量%で、SiO2 50〜65%、Al2O3 15〜26%、B2O3 0〜5%、MgO 0〜5%、CaO 0〜10%、SrO 0〜10%、BaO 0〜15%、P2O5 0.01〜15%を含有し、モル比(MgO+CaO+SrO+BaO)/Al2O3が0.5〜1.5であり、且つ{[B2O3]+3×[P2O5]}≦18.5モル%の関係を満たすことを特徴とするガラス。
- 質量比(SiO2+B2O3)/Al2O3が2〜4であることを特徴とする請求項1に記載のガラス。
- 質量比B2O3/P2O5が2以下であることを特徴とする請求項1又は2に記載のガラス。
- 4モル%≦{[B2O3]+3×[P2O5]}≦16.5モル%、且つ110モル%≦{2×[SiO2]−[MgO]−[CaO]−[SrO]−[BaO]}≦130モル%の関係を満たすことを特徴とする請求項1〜3の何れか一項に記載のガラス。
- ガラス組成中のLi2O+Na2O+K2Oの含有量が0.5質量%以下であることを特徴とする請求項1〜4の何れか一項に記載のガラス。
- ガラス組成中のB2O3の含有量が3.0質量%以下であることを特徴とする請求項1〜5の何れか一項に記載のガラス。
- 液相線温度から(液相線温度−50℃)の温度範囲で24時間保持した時に、SiO2−Al2O3−RO系結晶、SiO2系結晶、SiO2−Al2O3系結晶の内、2種類以上の結晶が析出する性質を有することを特徴とする請求項1〜6の何れか一項に記載のガラス。
- 歪点が710℃以上であることを特徴とする請求項1〜7の何れか一項に記載のガラス。
- 10質量%HF水溶液に20℃で30分間浸漬した時のエッチング深さが25μm以上になることを特徴とする請求項1〜8の何れか一項に記載のガラス。
- 比ヤング率が28GPa/(g/cm3)以上であることを特徴とする請求項1〜9の何れか一項に記載のガラス。
- 液晶ディスプレイの基板に用いることを特徴とする請求項1〜10の何れか一項に記載のガラス。
- OLEDディスプレイの基板に用いることを特徴とする請求項1〜11の何れか一項に記載のガラス。
- ポリシリコン又は酸化物TFT駆動の高精細ディスプレイの基板に用いることを特徴とする請求項1〜12の何れか一項に記載のガラス。
- ガラス組成として、少なくともSiO2、Al2O3、B2O3、P2O5及びRO(アルカリ土類金属酸化物)を含み、{[B2O3]+3×[P2O5]}≦18.5モル%の関係を満たし、且つ液相線温度から(液相線温度−50℃)の温度範囲で24時間保持した時に、SiO2−Al2O3−RO系結晶、SiO2系結晶、SiO2−Al2O3系結晶の内、2種類以上の結晶が析出する性質を有することを特徴とするガラス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015112004 | 2015-06-02 | ||
JP2015112004 | 2015-06-02 | ||
PCT/JP2016/065243 WO2016194693A1 (ja) | 2015-06-02 | 2016-05-24 | ガラス |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016194693A1 true JPWO2016194693A1 (ja) | 2018-03-29 |
JP6801651B2 JP6801651B2 (ja) | 2020-12-16 |
Family
ID=57440947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017521833A Active JP6801651B2 (ja) | 2015-06-02 | 2016-05-24 | ガラス |
Country Status (6)
Country | Link |
---|---|
US (1) | US10351466B2 (ja) |
JP (1) | JP6801651B2 (ja) |
KR (1) | KR102706625B1 (ja) |
CN (1) | CN107406303A (ja) |
TW (1) | TWI693203B (ja) |
WO (1) | WO2016194693A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107735376A (zh) * | 2015-06-30 | 2018-02-23 | 安瀚视特控股株式会社 | 显示器用玻璃基板及其制造方法 |
TWI714698B (zh) * | 2016-01-12 | 2021-01-01 | 日商日本電氣硝子股份有限公司 | 玻璃 |
CN113800764A (zh) * | 2016-12-20 | 2021-12-17 | 日本电气硝子株式会社 | 玻璃 |
JP7333159B2 (ja) * | 2016-12-26 | 2023-08-24 | 日本電気硝子株式会社 | 無アルカリガラス基板の製造方法 |
JP7121345B2 (ja) * | 2016-12-28 | 2022-08-18 | 日本電気硝子株式会社 | ガラス |
JP7113827B2 (ja) * | 2016-12-29 | 2022-08-05 | コーニング インコーポレイテッド | 耐ソラリゼーション性の希土類ドープガラス |
JP6972598B2 (ja) * | 2017-03-22 | 2021-11-24 | 日本電気硝子株式会社 | ガラス板及びその製造方法 |
US12109780B2 (en) * | 2017-04-27 | 2024-10-08 | Nippon Electric Glass Co., Ltd. | Carrier glass and method for producing same |
KR102634707B1 (ko) * | 2017-09-20 | 2024-02-08 | 에이지씨 가부시키가이샤 | 무알칼리 유리 기판 |
TWI809029B (zh) * | 2018-01-15 | 2023-07-21 | 美商康寧公司 | 尺度上穩定快速地蝕刻玻璃 |
JP7256473B2 (ja) * | 2018-01-23 | 2023-04-12 | 日本電気硝子株式会社 | ガラス基板及びその製造方法 |
JP7418947B2 (ja) * | 2018-01-31 | 2024-01-22 | 日本電気硝子株式会社 | ガラス |
US11554984B2 (en) * | 2018-02-22 | 2023-01-17 | Corning Incorporated | Alkali-free borosilicate glasses with low post-HF etch roughness |
CN109650720B (zh) * | 2019-01-14 | 2021-09-03 | 宁波行殊新能源科技有限公司 | 移动终端玻璃背盖基片及其生产方法 |
JP7530032B2 (ja) * | 2019-08-14 | 2024-08-07 | 日本電気硝子株式会社 | ガラス基板 |
CN111217521B (zh) * | 2020-03-10 | 2021-04-13 | 醴陵旗滨电子玻璃有限公司 | 铝硼硅酸盐玻璃及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01126239A (ja) * | 1987-11-11 | 1989-05-18 | Nippon Sheet Glass Co Ltd | 電子機器用ガラス基板 |
WO2010029967A1 (ja) * | 2008-09-10 | 2010-03-18 | 株式会社オハラ | ガラス |
JP2010215463A (ja) * | 2009-03-18 | 2010-09-30 | Nippon Electric Glass Co Ltd | 無アルカリガラス |
JP2012184146A (ja) * | 2011-03-08 | 2012-09-27 | Nippon Electric Glass Co Ltd | 無アルカリガラス |
JP2012236759A (ja) * | 2011-04-25 | 2012-12-06 | Nippon Electric Glass Co Ltd | 液晶レンズ用ガラス基板 |
JP2013230963A (ja) * | 2011-09-30 | 2013-11-14 | Avanstrate Inc | ガラス板及びガラス板の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19851927C2 (de) * | 1998-11-11 | 2001-02-22 | Schott Glas | Thermisch hochbelastbares Glas und seine Verwendung |
JP2001332759A (ja) * | 2000-03-16 | 2001-11-30 | Matsushita Electric Ind Co Ltd | アバランシェフォトダイオード |
JP2002003240A (ja) * | 2000-06-19 | 2002-01-09 | Nippon Electric Glass Co Ltd | 液晶ディスプレイ用ガラス基板 |
US7442391B2 (en) * | 2002-01-25 | 2008-10-28 | Integrated Botanical Technologies, Llc | Bioactive botanical cosmetic compositions and processes for their production |
US20100215463A1 (en) * | 2009-02-22 | 2010-08-26 | Chou Chi-Pin | Carrying Apparatus Capable of Quickly Moving a Positioning Platform Carried by it |
JP5729673B2 (ja) * | 2010-12-06 | 2015-06-03 | 日本電気硝子株式会社 | 無アルカリガラス |
US8785336B2 (en) * | 2011-03-14 | 2014-07-22 | Nippon Electric Glass Co., Ltd. | Alkali-free glass |
JP5172044B2 (ja) | 2011-07-01 | 2013-03-27 | AvanStrate株式会社 | フラットパネルディスプレイ用ガラス基板及びその製造方法 |
US9162919B2 (en) * | 2012-02-28 | 2015-10-20 | Corning Incorporated | High strain point aluminosilicate glasses |
JP6365826B2 (ja) * | 2013-07-11 | 2018-08-01 | 日本電気硝子株式会社 | ガラス |
-
2016
- 2016-05-24 JP JP2017521833A patent/JP6801651B2/ja active Active
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01126239A (ja) * | 1987-11-11 | 1989-05-18 | Nippon Sheet Glass Co Ltd | 電子機器用ガラス基板 |
WO2010029967A1 (ja) * | 2008-09-10 | 2010-03-18 | 株式会社オハラ | ガラス |
JP2010215463A (ja) * | 2009-03-18 | 2010-09-30 | Nippon Electric Glass Co Ltd | 無アルカリガラス |
JP2012184146A (ja) * | 2011-03-08 | 2012-09-27 | Nippon Electric Glass Co Ltd | 無アルカリガラス |
JP2012236759A (ja) * | 2011-04-25 | 2012-12-06 | Nippon Electric Glass Co Ltd | 液晶レンズ用ガラス基板 |
JP2013230963A (ja) * | 2011-09-30 | 2013-11-14 | Avanstrate Inc | ガラス板及びガラス板の製造方法 |
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US20180148367A1 (en) | 2018-05-31 |
WO2016194693A1 (ja) | 2016-12-08 |
KR102706625B1 (ko) | 2024-09-13 |
KR20180015611A (ko) | 2018-02-13 |
TW201704168A (zh) | 2017-02-01 |
CN107406303A (zh) | 2017-11-28 |
US10351466B2 (en) | 2019-07-16 |
JP6801651B2 (ja) | 2020-12-16 |
TWI693203B (zh) | 2020-05-11 |
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