JPWO2016174541A1 - 電子機器 - Google Patents
電子機器 Download PDFInfo
- Publication number
- JPWO2016174541A1 JPWO2016174541A1 JP2017515285A JP2017515285A JPWO2016174541A1 JP WO2016174541 A1 JPWO2016174541 A1 JP WO2016174541A1 JP 2017515285 A JP2017515285 A JP 2017515285A JP 2017515285 A JP2017515285 A JP 2017515285A JP WO2016174541 A1 JPWO2016174541 A1 JP WO2016174541A1
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- JP
- Japan
- Prior art keywords
- circuit
- transistor
- signal
- oxide semiconductor
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Images
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/14—Digital output to display device ; Cooperation and interconnection of the display device with other functional units
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H04N21/40—Client devices specifically adapted for the reception of or interaction with content, e.g. set-top-box [STB]; Operations thereof
- H04N21/43—Processing of content or additional data, e.g. demultiplexing additional data from a digital video stream; Elementary client operations, e.g. monitoring of home network or synchronising decoder's clock; Client middleware
- H04N21/436—Interfacing a local distribution network, e.g. communicating with another STB or one or more peripheral devices inside the home
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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Abstract
Description
本実施の形態では、本発明の一態様である電子機器について、図面を参照して説明する。図1は、本発明の一態様の電子機器を説明するブロック図である。当該電子機器は、信号出力装置10および表示装置20を有する。
本実施の形態では、実施の形態1で形成した信号出力装置10および表示装置20の構成に用いることのできるトランジスタについて説明する。
以下では、トランジスタの構成要素の一例について説明する。図8(A)および図8(B)は、本発明の一態様に係るトランジスタ100の上面図および断面図である。図8(A)は上面図であり、図8(B)は、図8(A)に示す一点鎖線A1−A2、および一点鎖線A3−A4に対応する断面図である。なお、図8(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
本発明の一態様に係るトランジスタは、図9(B)に示すように、基板110と絶縁体180との間に導電体175を有しても構わない。導電体175は、トランジスタの第2のゲート電極(ボトムゲート電極ともいう)としての機能を有する。
また、本発明の一態様に係るトランジスタは、図10(A)および図10(B)に示す構成とすることもできる。図10(A)および図10(B)は、トランジスタ200の上面図および断面図である。図10(A)は上面図であり、図10(B)は、図10(A)に示す一点鎖線B1−B2、および一点鎖線B3−B4に対応する断面図である。なお、図10(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
また、本発明の一態様に係るトランジスタは、図11(A)および図11(B)に示す構成とすることもできる。図11(A)および図11(B)は、トランジスタ300の上面図および断面図である。図11(A)は上面図であり、図11(B)は、図11(A)に示す一点鎖線B1−B2、および一点鎖線B3−B4に対応する断面図である。なお、図11(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
以下では、本発明の一態様に用いることのできる酸化物半導体膜の構造について説明する。
(実施の形態4)
本実施の形態では、本発明の一態様の電子機器が有する半導体装置を構成する回路の一例について図面を参照して説明する。
本実施の形態では、本発明の一態様の電子機器における表示部に用いることできる表示装置について、図17および図18を用いて説明する。
15 信号入出力装置
20 表示装置
21 表示装置
31 有線伝送路
32 経路
33 経路
100 トランジスタ
110 基板
130 酸化物半導体
130a 酸化物半導体
130b 酸化物半導体
130c 酸化物半導体
140 導電体
150 導電体
160 絶縁体
170 導電体
171 導電体
172 導電体
175 導電体
180 絶縁体
200 トランジスタ
210 基板
230 半導体
240 導電体
250 導電体
260 絶縁体
275 導電体
300 トランジスタ
310 基板
330 半導体
330a 半導体
330b 半導体
330c 半導体
340 導電体
350 導電体
360 絶縁体
370 導電体
380 絶縁体
390 絶縁体
700 基板
704a 導電体
704b 導電体
706 半導体
706b 半導体
712 絶縁体
712a 絶縁体
714a 導電体
714b 導電体
716a 導電体
716b 導電体
718a 絶縁体
718b 絶縁体
718c 絶縁体
719 発光素子
720 絶縁体
721 絶縁体
731 端子
732 FPC
733a 配線
734 シール材
735 駆動回路
736 駆動回路
737 画素
741 トランジスタ
742 容量素子
743 スイッチ素子
744 信号線
750 基板
751 トランジスタ
752 容量素子
753 液晶素子
754 走査線
755 信号線
781 導電体
782 発光層
783 導電体
784 隔壁
791 導電体
792 絶縁体
793 液晶層
794 絶縁体
795 スペーサ
796 導電体
797 基板
911 筐体
912 表示部
919 カメラ
921 筐体
922 表示部
923 スタンド
931 筐体
932 表示部
933 キーボード
934 ポインティングデバイス
941 電柱
942 表示部
951 筐体
952 筐体
953 表示部
954 スイッチ
955 レンズ
956 接続部
1000 装置
1100 回路
1200 回路
1300 回路
1400 回路
1500 アンテナ
2000 表示部
2100 回路
2150 記憶回路
2300 回路
2400 回路
2500 アンテナ
3000 バッテリー
3100 入出力端子
3200 入出力端子
3300 操作ボタン
3400 カメラ
3500 ケーブル
4001 基板
4004 プラグ
4100 トランジスタ
4200 トランジスタ
4201 絶縁膜
4202 配線
4203 プラグ
4204 層間絶縁膜
4207 絶縁膜
4211 半導体基板
4212 絶縁膜
4213 ゲート電極
4214 ゲート絶縁膜
4215 ドレイン領域
4300 トランジスタ
4301 不純物領域
4303 ゲート電極
4304 ゲート絶縁膜
4305 側壁絶縁膜
4400 光電変換素子
4401 導電層
4402 導電層
4403 導電層
4500 光電変換素子
4501 導電層
4502 導電層
4503 半導体
4504 プラグ
5001 配線
5002 配線
5003 配線
5004 配線
5005 配線
5200 トランジスタ
5300 トランジスタ
5400 容量素子
Claims (7)
- 信号出力装置と、表示装置と、を有する電子機器であって、
前記信号出力装置は、画像信号を複数の信号に分割することができる機能を有し、
前記表示装置は、前記複数の信号を組み合わせる機能を有し、
前記複数の信号は、第1の信号と、第2の信号と、を有し、
前記信号出力装置は、有線伝送路を介して、前記表示装置に前記第1の信号を伝送することができる機能を有し、
前記信号出力装置は、無線伝送路を介して、前記表示装置に前記第2の信号を伝送することができる機能を有する電子機器。 - 信号出力装置と、表示装置と、を有する電子機器であって、
前記信号出力装置は、有線伝送路を介して、前記表示装置に第1の信号を伝送することができる機能を有し、
前記信号出力装置は、無線伝送路を介して、前記表示装置に第2の信号を伝送することができる機能を有し、
前記信号出力装置は、第1の回路、第2の回路、第3の回路、第4の回路および第1のアンテナを有し、
前記第1の回路は、画像信号の伝送経路を選択する機能を有し、
前記第2の回路は、前記第1の回路から伝送された画像信号を複数の信号に分割する機能を有し、
前記複数の信号は、前記第1の信号と、前記第2の信号と、を有し、
前記第3の回路は、前記第2の回路から伝送された前記第1の信号を変調信号に変換する機能を有し、
前記第4の回路は、前記第3の回路から伝送された前記変調信号を前記第1のアンテナを用いて送信する機能を有し、
前記表示装置は、第5の回路、第6の回路、第7の回路、第2のアンテナおよび表示部を有し、
前記第5の回路は、前記第4の回路から送信された前記変調信号を前記第2のアンテナを用いて受信する機能を有し、
前記第6の回路は、前記第5の回路から伝送された前記変調信号を復調して前記第1の信号に変換する機能を有し、
前記第7の回路は、前記第2の回路から伝送された第2の信号および前記第6の回路から伝送された前記第1の信号から前記表示部に表示させる画像を構成する機能を有する電子機器。 - 請求項2において、
前記第4の回路は、複数の周波数帯の電波を用いて前記変調信号を送信する機能を有する電子機器。 - 請求項2において、
前記第5の回路は、複数の周波数帯の電波を用いて送信された前記変調信号を受信する機能を有する電子機器。 - 請求項2において、
前記有線伝送路は複数設けられている電子機器。 - 請求項1または2において、
信号出力装置および表示装置は、活性層に酸化物半導体を有するトランジスタを有し、当該酸化物半導体は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有する電子機器。 - 請求項1または2に記載の信号出力装置および表示装置と、
カメラ、バッテリ、スイッチ、マイク、または、スピーカの少なくとも一つと、
を有する電子機器。
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WO2016174541A1 (ja) | 2016-11-03 |
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