JPWO2015097878A1 - シート状構造体、これを用いた電子機器、シート状構造体の製造方法、及び電子機器の製造方法 - Google Patents
シート状構造体、これを用いた電子機器、シート状構造体の製造方法、及び電子機器の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 118
- 239000012782 phase change material Substances 0.000 claims abstract description 48
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- 230000002776 aggregation Effects 0.000 claims description 22
- 238000004220 aggregation Methods 0.000 claims description 19
- 229920005992 thermoplastic resin Polymers 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000004931 aggregating effect Effects 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 description 112
- 229910021393 carbon nanotube Inorganic materials 0.000 description 103
- 239000000463 material Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 5
- 150000001721 carbon Chemical class 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical class OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- -1 ethanol and methanol Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
第1の方向に延びる複数の炭素元素の線状構造体と、
前記線状構造体の成長端である先端側を埋め込む相変化材料と、
前記線状構造体の根元側で前記相変化材料から露出して形成される複数の凝集部と、
を有し、前記凝集部は、前記第1の方向と直交する第2の方向に非局在的に分布する。
基板上に第1の方向に配向する炭素元素の線状構造体を複数形成し、
前記線状構造体の成長端である先端側を相変化材料で埋め込み、
前記線状構造体の根元側を前記相変化材料から露出した状態で、前記線状構造体を前記基板から剥離し、
剥離した前記線状構造体の前記根元側を凝集させる。
ここで、Cは、自由端と固定端の条件に関する端末条件係数、Eはヤング率、λはアスペクト比である。実施形態で作製したシート状構造体10において、カーボンナノチューブ11のヤング率Eは1000GPa、端末条件係数はC=0.25である。
10 シート状構造体
11 カーボンナノチューブ(炭素元素の線状構造体)
12 カーボンナノチューブ束
13 凝集部
14 先端側
15 相変化材料
20 発熱体
30 ヒートスプレッダ(放熱体)
Claims (16)
- 第1の方向に延びる複数の炭素元素の線状構造体と、
前記線状構造体の成長端である先端側を埋め込む相変化材料と、
前記線状構造体の根元側で前記相変化材料から露出して形成される複数の凝集部と
を有し、前記凝集部は、前記第1の方向と直交する第2の方向に非局在的に分布することを特徴とするシート状構造体。 - 前記根元側での前記シート状構造体の座屈応力は、前記先端側での座屈応力よりも大きいことを特徴とする請求項1に記載のシート状構造体。
- 前記複数の凝集部の高さは一定であることを特徴とする請求項1に記載のシート状構造体。
- 前記線状構造体の前記先端側は、長さばらつきを有することを特徴とする請求項1に記載のシート状構造体。
- 前記相変化材料は、熱可塑性樹脂であることを特徴とする請求項1に記載のシート状構造体。
- 発熱体と、
放熱体と、
前記発熱体と前記放熱体の間に配置されるシート状構造体と、
を備え、
前記シート状構造体は、
第1の方向に延びる複数の炭素元素の線状構造体と、
前記線状構造体の間を充填する相変化材料と、
を有し、
前記線状構造体の根元側に近接する線状構造体の集合体である凝集部が複数形成され、
前記凝集部は、前記第1の方向と直交する第2の方向に非局在的に分布することを特徴とする電子機器。 - 前記シート状構造体は、前記線状構造体の先端側が前記発熱体と接して配置されることを特徴とする請求項6に記載の電子機器。
- 前記線状構造体の先端側は、長さばらつきを含んだ状態で塑性変形していることを特徴とする請求項6に記載の電子機器。
- 前記シート状構造体は、前記凝集部が前記放熱体に接して配置されることを特徴とする請求項6に記載の電子機器。
- 前記相変化材料は、前記シート状構造体を前記発熱体と前記放熱体とに接着する熱可塑性樹脂であることを特徴とする請求項6に記載の電子機器。
- 基板上に第1の方向に配向する炭素元素の線状構造体を複数形成し、
前記線状構造体の成長端である先端側を相変化材料で埋め込み、
前記線状構造体の根元側を前記相変化材料から露出した状態で、前記線状構造体を前記基板から剥離し、
剥離した前記線状構造体の前記根元側を凝集させる、
ことを特徴とするシート状構造体の製造方法。 - 前記相変化材料から露出する前記線状構造体の前記根元側の長さは、目的とする前記根元側の座屈応力に応じて決定されることを特徴とする請求項11に記載のシート状構造体の製造方法。
- 前記凝集は、前記線状構造体の前記根元側を水に浸漬して乾燥することによって生じることを特徴とする請求項11に記載のシート状構造体の製造方法。
- 基板上に第1の方向に配向する炭素元素の線状構造体を複数形成し、
前記線状構造体の成長端である先端側を相変化材料で埋め込み、
前記線状構造体の根元側を前記相変化材料から露出した状態で、前記線状構造体を前記基板から剥離し、
剥離した前記線状構造体の前記根元側を凝集させてシート状構造体を作製し、
前記シート状構造体を、発熱体と放熱体の間に配置する
ことを特徴とする電子機器の製造方法。 - 前記シート状構造体は、前記線状構造体の前記先端側を前記発熱体に接続し、前記線状構造体の前記根元側を前記放熱体に接続して配置することを特徴とする請求項14に記載の電子機器の製造方法。
- 前記シート状構造体を、前記発熱体と前記放熱体の間に配置した状態で加熱、加圧することにより、前記線状構造体の前記先端側を前記発熱体の表面に対して塑性変形させることを特徴とする請求項15に記載の電子機器の製造方法。
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WO2007111107A1 (ja) * | 2006-03-24 | 2007-10-04 | Fujitsu Limited | 炭素系繊維のデバイス構造およびその製造方法 |
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