JPWO2015093608A1 - 半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子 - Google Patents

半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子 Download PDF

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JPWO2015093608A1
JPWO2015093608A1 JP2015553630A JP2015553630A JPWO2015093608A1 JP WO2015093608 A1 JPWO2015093608 A1 JP WO2015093608A1 JP 2015553630 A JP2015553630 A JP 2015553630A JP 2015553630 A JP2015553630 A JP 2015553630A JP WO2015093608 A1 JPWO2015093608 A1 JP WO2015093608A1
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Prior art keywords
diffusion layer
type diffusion
semiconductor substrate
glass particles
manufacturing
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JP2015553630A
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English (en)
Japanese (ja)
Inventor
明博 織田
明博 織田
吉田　誠人
誠人 吉田
野尻　剛
剛 野尻
倉田　靖
靖 倉田
芦沢　寅之助
寅之助 芦沢
洋一 町井
洋一 町井
岩室　光則
光則 岩室
佐藤　英一
英一 佐藤
麻理 清水
麻理 清水
鉄也 佐藤
鉄也 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corporation
Showa Denko Materials Co Ltd
Original Assignee
Resonac Corporation
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Application filed by Resonac Corporation, Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd filed Critical Resonac Corporation
Publication of JPWO2015093608A1 publication Critical patent/JPWO2015093608A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
JP2015553630A 2013-12-20 2014-12-19 半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子 Pending JPWO2015093608A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013264589 2013-12-20
JP2013264589 2013-12-20
PCT/JP2014/083783 WO2015093608A1 (ja) 2013-12-20 2014-12-19 半導体基板の製造方法、半導体基板、太陽電池素子の製造方法及び太陽電池素子

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JPWO2015093608A1 true JPWO2015093608A1 (ja) 2017-03-23

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Country Status (4)

Country Link
JP (1) JPWO2015093608A1 (zh)
CN (1) CN105830200A (zh)
TW (1) TW201528531A (zh)
WO (1) WO2015093608A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107148662A (zh) * 2014-10-30 2017-09-08 日立化成株式会社 n型扩散层形成组合物、n型扩散层的制造方法及太阳能电池元件的制造方法
JP2017151408A (ja) * 2016-02-22 2017-08-31 株式会社タムロン 赤外線透過膜、光学膜、反射防止膜、光学部品、光学系及び撮像装置
CN110610854A (zh) * 2018-06-15 2019-12-24 天津环鑫科技发展有限公司 一种扩散磷源的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026579A (ja) * 2011-07-25 2013-02-04 Hitachi Chem Co Ltd ｐ型拡散層の製造方法及び太陽電池素子の製造方法
WO2013125254A1 (ja) * 2012-02-23 2013-08-29 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法、及び太陽電池素子の製造方法
JP2013229391A (ja) * 2012-04-24 2013-11-07 Tokyo Ohka Kogyo Co Ltd 膜形成用組成物、拡散剤組成物、膜形成用組成物の製造方法、及び拡散剤組成物の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104844268A (zh) * 2010-06-24 2015-08-19 日立化成工业株式会社 杂质扩散层形成组合物,n型、p型扩散层形成组合物、太阳能电池元件及它们的制造方法
CN105448677A (zh) * 2011-07-25 2016-03-30 日立化成株式会社 半导体基板及其制造方法、太阳能电池元件、以及太阳能电池
TW201331312A (zh) * 2012-01-10 2013-08-01 Hitachi Chemical Co Ltd 遮罩形成用組成物、太陽電池用基板的製造方法以及太陽電池元件的製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026579A (ja) * 2011-07-25 2013-02-04 Hitachi Chem Co Ltd ｐ型拡散層の製造方法及び太陽電池素子の製造方法
WO2013125254A1 (ja) * 2012-02-23 2013-08-29 日立化成株式会社 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法、及び太陽電池素子の製造方法
JP2013229391A (ja) * 2012-04-24 2013-11-07 Tokyo Ohka Kogyo Co Ltd 膜形成用組成物、拡散剤組成物、膜形成用組成物の製造方法、及び拡散剤組成物の製造方法

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WO2015093608A1 (ja) 2015-06-25
CN105830200A (zh) 2016-08-03

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