JPWO2015060437A1 - 光電変換素子、光電変換モジュール、並びに、太陽光発電システム - Google Patents
光電変換素子、光電変換モジュール、並びに、太陽光発電システム Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 243
- 238000010248 power generation Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 239
- 239000002184 metal Substances 0.000 claims abstract description 239
- 239000000758 substrate Substances 0.000 claims abstract description 155
- 239000013078 crystal Substances 0.000 claims abstract description 151
- 239000004065 semiconductor Substances 0.000 claims abstract description 105
- 229910052709 silver Inorganic materials 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 abstract description 26
- 239000010410 layer Substances 0.000 description 512
- 229910021417 amorphous silicon Inorganic materials 0.000 description 190
- 239000010408 film Substances 0.000 description 158
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 135
- 229910052710 silicon Inorganic materials 0.000 description 135
- 239000010703 silicon Substances 0.000 description 135
- 238000009792 diffusion process Methods 0.000 description 67
- 238000000034 method Methods 0.000 description 42
- 238000004519 manufacturing process Methods 0.000 description 34
- 238000010438 heat treatment Methods 0.000 description 27
- 239000010409 thin film Substances 0.000 description 22
- 238000002161 passivation Methods 0.000 description 21
- 239000012071 phase Substances 0.000 description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 16
- 238000009826 distribution Methods 0.000 description 13
- 239000011247 coating layer Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000003491 array Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001887 electron backscatter diffraction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Abstract
Description
図1には、本発明の第1の実施の形態による光電変換素子10が示されている。光電変換素子10は、裏面電極型の太陽電池である。
図2A〜図2Fを参照しながら、光電変換素子10の製造方法について説明する。
光電変換素子10においては、金属層28n、28pに含まれる複数の金属結晶粒の平均結晶粒径(以下、単に平均結晶粒径と称する)を金属層28n、28pの厚みよりも大きくすることで、素子特性を向上させることができる。以下、この点について説明する。なお、熱処理等を実施して所望のサイズの金属結晶粒を成長させた後、電極22nおよび電極22pの上に、更に、導電膜を形成する場合については、所望のサイズの金属結晶粒が形成されている金属層と当該金属層の厚みとの関係が、上記の条件を満たせばよい。
結晶粒径=2×{(結晶粒の面積)/π}1/2・・・(1)
式(1)における「結晶粒の面積」は、電子後方散乱回折法を用いて測定したものである。式(1)は、結晶粒の面積を円の面積と仮定し、且つ、結晶粒径を円の直径と仮定して計算することを意味する。結晶粒径を求める際、シグマ3(Σ3)の対応粒界は、粒界として取り扱わないこととする。また、結晶方位のずれが5度以内である場合には、同一の結晶粒とみなすこととする。
セル抵抗={(電極22nとn型非晶質シリコン層20nとの接触抵抗)×(1+N)}+{(電極22pとp型非晶質シリコン層20pとの接触抵抗)×(1+N)/N}・・(2)
図9に示すように、電極22pとp型非晶質シリコン層20pとの接触面積が、電極22nとn型非晶質シリコン層20nとの接触面積の1倍以上であって、平均結晶粒径の平均値が、0.41μm以上であって、且つ、0.86μm以下である場合には、熱処理をしていない状態でのセル抵抗よりも低くなった。従って、平均結晶粒径の平均値は、金属層28nの厚みおよび金属層29nの厚みの1.03倍以上2.15倍以下であることが好ましい。
本発明の第1の実施の形態による光電変換素子は、図12〜図14に示すような構成であってもよい。
図15は、本発明の第2の実施の形態による光電変換素子50の構成を示す断面図である。光電変換素子50は、シリコン基板52と、非晶質膜54と、非晶質膜56と、電極58と、絶縁膜60と、電極62とを含む。
図16A〜図16Gを参照しながら、光電変換素子50の製造方法について説明する。
図17は、第2の実施の形態の応用例に係る光電変換素子50Aの概略構成を示す断面図である。光電変換素子50Aは、光電変換素子50と比べて、非晶質膜54の代わりに、非晶質膜70及び非晶質膜72を備える。また、光電変換素子50Aは、光電変換素子50と比べて、電極58の代わりに、電極76を備える。
図18は、本発明の第3の実施の形態による光電変換素子80の概略構成を示す断面図である。光電変換素子80は、光電変換素子50のシリコン基板52をシリコン基板82に代え、絶縁膜60を非晶質膜84、86に代え、電極62を電極88に代えたものである。その他は、光電変換素子50と同じである。
図19A〜19Fを参照しながら、光電変換素子80の製造方法について説明する。
図20は、第3の実施の形態の応用例1に係る光電変換素子80Aの概略構成を示す縦断面図である。光電変換素子80Aは、光電変換素子80と比べて、非晶質膜54の代わりに、非晶質膜70及び非晶質膜72を備える。非晶質膜84の代わりに、非晶質膜94及び非晶質膜96を備える。電極58の代わりに、電極76を備える。電極88の代わりに、電極98を備える。
図21は、第3の実施の形態の応用例2に係る光電変換素子80Bの概略構成を示す縦断面図である。光電変換素子80Bは、光電変換素子80と比べて、非晶質膜54の代わりに、非晶質膜70及び非晶質膜72を備える。電極58の代わりに、電極76を備える。
図22は、この実施の形態による光電変換素子を備える光電変換モジュールの構成を示す概略図である。図22を参照して、光電変換モジュール1000は、複数の光電変換素子1001と、カバー1002と、出力端子1003,1004とを備える。
図23は、この実施の形態による光電変換素子を備える太陽光発電システムの構成を示す概略図である。図23を参照して、太陽光発電システム1100は、光電変換モジュールアレイ1101と、接続箱1102と、パワーコンディショナー1103と、分電盤1104と、電力メーター1105とを備える。
図25は、この実施の形態による光電変換素子を備える太陽光発電システムの構成を示す概略図である。図25を参照して、太陽光発電システム1200は、サブシステム1201〜120n(nは2以上の整数)と、パワーコンディショナー1211〜121nと、変圧器1221とを備える。太陽光発電システム1200は、図23に示す太陽光発電システム1100よりも規模が大きい太陽光発電システムである。
Claims (13)
- 半導体基板と、
第1導電型の第1半導体層と、
前記第1導電型とは反対の第2導電型の第2半導体層と、
前記第1半導体層上に形成された第1電極と、
前記第2半導体層上に形成された第2電極とを備え、
前記第1電極は、
前記第1半導体層上に形成された第1透明導電層と、
前記第1透明導電層上に形成された第1金属層とを含み、
前記第1金属層は、金属結晶粒を複数含み、
前記第1金属層の面内方向における前記金属結晶粒の平均結晶粒径が前記第1金属層の厚みよりも大きい、光電変換素子。 - 請求項1に記載の光電変換素子であって、
前記第1電極は、銀を主成分とする金属膜からなる、光電変換素子。 - 請求項1又は2に記載の光電変換素子であって、
前記第1半導体層及び前記第2半導体層は、前記半導体基板における受光面とは反対側の裏面に形成される、光電変換素子。 - 請求項1〜3の何れか1項に記載の光電変換素子であって、
前記金属結晶粒は、前記半導体基板の厚み方向に平行な結晶軸が<111>方向に優先配向している、光電変換素子。 - 請求項1〜4の何れか1項に記載の光電変換素子であって、
前記第1導電型は、n型であり、
前記平均結晶粒径は、前記第1金属層の厚みの3.33倍未満である、光電変換素子。 - 請求項1〜4の何れか1項に記載の光電変換素子であって、
前記第1導電型は、n型であり、
前記平均結晶粒径は、前記第1金属層の厚みの2.85倍以下である、光電変換素子。 - 請求項1〜4の何れか1項に記載の光電変換素子であって、
前記第1導電型は、n型であり、
前記平均結晶粒径は、前記第1金属層の厚みの1.55倍以上であって、且つ、2.85倍以下である、光電変換素子。 - 請求項1〜4の何れか1項に記載の光電変換素子であって、
前記第1導電型は、p型であり、
前記平均結晶粒径は、前記第1金属層の厚みの3.3倍以下である、光電変換素子。 - 請求項1〜4の何れか1項に記載の光電変換素子であって、
前記第1導電型は、p型であり、
前記平均結晶粒径は、前記第1金属層の厚みの1.03倍以上であって、且つ、2.95倍以下である、光電変換素子。 - 請求項1〜4の何れか1項に記載の光電変換素子であって、
前記第1導電型は、p型であり、
前記平均結晶粒径は、前記第1金属層の厚みの1.53倍以上であって、且つ、2.15倍以下である、光電変換素子。 - 請求項1〜4の何れか1項に記載の光電変換素子であって、
前記第2電極は、
前記第2半導体層上に形成された第2透明導電層と、
前記第2透明導電層上に形成された第2金属層とを含み、
前記第2金属層は、金属結晶粒を複数含み、
前記第2電極と前記第2半導体層との接触面積は、前記第1電極と前記第1半導体層との接触面積の1倍以上であり、
前記第1金属層における金属結晶粒の平均結晶粒径と前記第2金属層における金属結晶粒の平均結晶粒径との平均値が、前記第1金属層および前記第2金属層の厚みの1.03倍以上であって、且つ、2.15倍以下である、光電変換素子。 - 請求項1〜11の何れか1項に記載の光電変換素子を少なくとも1つ含む光電変換モジュール。
- 請求項12に記載の光電変換モジュールを少なくとも1つ含む太陽光発電システム。
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