JPWO2014050198A1 - スイッチング素子およびスイッチング素子の製造方法 - Google Patents

スイッチング素子およびスイッチング素子の製造方法 Download PDF

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Publication number
JPWO2014050198A1
JPWO2014050198A1 JP2014538223A JP2014538223A JPWO2014050198A1 JP WO2014050198 A1 JPWO2014050198 A1 JP WO2014050198A1 JP 2014538223 A JP2014538223 A JP 2014538223A JP 2014538223 A JP2014538223 A JP 2014538223A JP WO2014050198 A1 JPWO2014050198 A1 JP WO2014050198A1
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JP
Japan
Prior art keywords
electrode
wiring
metal
conductive layer
insulating film
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Pending
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JP2014538223A
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English (en)
Japanese (ja)
Inventor
直樹 伴野
直樹 伴野
宗弘 多田
宗弘 多田
阪本　利司
利司 阪本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
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NEC Corp
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Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of JPWO2014050198A1 publication Critical patent/JPWO2014050198A1/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices

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  • Semiconductor Memories (AREA)
JP2014538223A 2012-09-28 2013-05-13 スイッチング素子およびスイッチング素子の製造方法 Pending JPWO2014050198A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012217319 2012-09-28
JP2012217319 2012-09-28
PCT/JP2013/063248 WO2014050198A1 (fr) 2012-09-28 2013-05-13 Élément commutateur et son procédé de fabrication

Publications (1)

Publication Number Publication Date
JPWO2014050198A1 true JPWO2014050198A1 (ja) 2016-08-22

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ID=50387617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014538223A Pending JPWO2014050198A1 (ja) 2012-09-28 2013-05-13 スイッチング素子およびスイッチング素子の製造方法

Country Status (2)

Country Link
JP (1) JPWO2014050198A1 (fr)
WO (1) WO2014050198A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4489363B2 (ja) * 2003-03-03 2010-06-23 シャープ株式会社 不揮発性記憶素子、不揮発性記憶回路、不揮発性記憶カードおよび記録再生装置
CN100407440C (zh) * 2003-07-18 2008-07-30 日本电气株式会社 开关元件、驱动开关元件的方法、可重写的逻辑集成电路以及存储元件
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
JP2011211165A (ja) * 2010-03-12 2011-10-20 Nec Corp 半導体装置及びその製造方法

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Publication number Publication date
WO2014050198A1 (fr) 2014-04-03

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